1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN10K
Ordering Information
Standard Commercial Devices
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
60V
5.0
0.75A
VN10KN3
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
TO-92
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
30V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
S G D
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
60
V
V
GS
= 0V, I
D
= 100
A
Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
0.8
2.5
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
= 15V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= 45V
500
A
V
GS
= 0V, V
DS
= 45V, T
A
125
C
I
D(ON)
ON-State Drain Current
0.75
A
V
GS
= 10V, V
DS
= 10V
R
DS(ON)
7.5
V
GS
= 5V, I
D
= 0.2A
5.0
V
GS
= 10V, I
D
= 500mA
R
DS(th)
Change in R
DS(th)
with Temperature
0.7
%/
C
V
GS
= 10V, I
D
= 500mA,
G
FS
Forward Transconductance
100
m
V
DS
= 10V, I
D
= 500mA
C
ISS
Input Capacitance
48
60
C
OSS
Common Source Output Capacitance
16
25
pF
C
RSS
Reverse Transfer Capacitance
2
5
t
(ON)
Turn-ON Time
10
t
(OFF)
Turn-OFF Time
10
V
SD
Diode Forward Voltage Drop
0.8
V
V
GS
= 0V, I
SD
= 0.5A
t
rr
Reverse Recovery Time
160
ns
V
GS
= 0V, I
SD
= 0.5A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VN10K
Package
I
D
(continuous)
1,2
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.31A
1.0A
1.0W
125
170
0.31A
1.0A
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. VN0106N3 can be used if an I
D
(continuous) of 0.5 is needed.
Thermal Characteristics
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DS
= 25V, V
GS
= 0V
f = 1 MHz
V
DD
= 15V, I
D
= 0.6A,
R
GEN
= 25
ns
Static Drain-to-Source
ON-State Resistance
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
3
VN10K
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
1.0
0.8
0.6
0.4
0.2
V
DS
(volts)
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
D
(amperes)
Switching Waveform
Input Voltage
(volts)
10
5
0
15
5
0
50
10
20
30
t Time(ns)
Transconductance vs. Drain Current
250
200
150
100
50
0
0
1000
200
400
600
800
G
FS
(m )
I
D
(mA)
Power Dissipation vs. Case Temperature
0
150
100
50
2
1
125
75
25
T
C
(
C)
P
D
(watts)
TO-92
V
DS
= 10V
300
s, 2%
Duty Cycle
Pulse Test
TO-92 (DC)
0
10
20
30
50
40
VGS =10V
6V
5V
4V
2V
0
2
4
6
10
8
VGS =10V
6V
4V
2V
3V
0
10
40
Output Voltage
(volts)
5V
3V
9V
8V
7V
0
0
0
TC = 25
C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VN10K
Typical Performance Curves
Transconductance vs Gate-Source Voltage
Gfs (m )
I
D
(amperes)
G
FS
(mhos)
Output Conductance vs Drain Current
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
50
40
30
20
10
0
C (picofarads)
V
DS
(volts)
V
GS
(Volts)
BV
DSS
Variation with Temperature
0
10
20
30
40
0
2
4
6
8
10
-50
0
50
100
150
1.1
1.0
0.9
100
10
1
100
10
0
2
4
6
8
10
1.0
0.8
0.6
0.4
0.2
0
50
250
200
150
100
50
0
V
GS
(volts)
1.0
0.1
0.01
0.01
0.1
1.0
V
DS
= 0.1V
1
REDUCTION
DUE TO
HEATING
VDS = 10V
300
s, 2%
DUTY CYCLE
PULSE TEST
VDS = 25V
80
s, 1%
DUTY CYCLE
PULSE TEST
V
DS
= 10V
3000
s, 2%
DUTY CYCLE
PULSE TEST
C
ISS
C
OSS
C
RSS
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