7-191
7
VN1304
VN1306
VN1310
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
R
DS(ON)
I
D(ON)
Order Number / Package
BV
DGS
(max)
(min)
TO-39
TO-92
40V
8.0
0.5A
--
--
60V
8.0
0.5A
VN1306N2
--
100V
8.0
0.5A
--
VN1310N3
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
* Distance of 1.6 mm from case for 10 seconds.
S G D
D G S
TO-39
TO-92
Ordering Information
Case: DRAIN
7-192
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-39
0.4A
1.4A
3.0W
41
125
0.4A
1.4A
TO-92
0.25A
1.3A
1.0W
125
170
0.25A
1.3A
*
I
D
(continuous) is limited by max rated T
j.
Thermal Characteristics
Electrical Characteristics
(@ 25
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN1310
100
VN1306
60
V
V
GS
= 0V, I
D
= 1mA
VN1304
40
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.9
-5.0
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.25
0.6
V
GS
= 5V, V
DS
= 25V
0.50
1.4
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
5.0
15
V
GS
= 5V, I
D
= 50mA
5.0
8.0
V
GS
= 10V, I
D
= 500mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.8
2
%/
C
V
GS
= 10V, I
D
= 500mA
G
FS
Forward Transconductance
120
m
V
DS
= 25V, I
D
= 500mA
C
ISS
Input Capacitance
27
35
C
OSS
Common Source Output Capacitance
13
15
pF
C
RSS
Reverse Transfer Capacitance
3
5
t
d(ON)
Turn-ON Delay Time
2
5
t
r
Rise Time
2
5
t
d(OFF)
Turn-OFF Delay Time
2
6
t
f
Fall Time
2
5
V
SD
Diode Forward Voltage Drop
1.0
1.3
V
V
GS
= 0V, I
SD
= 0.5A
t
rr
Reverse Recovery Time
350
ns
V
GS
= 0V, I
SD
= 0.5A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
A
V
DD
= 25V
I
D
= 500mA
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Switching Waveforms and Test Circuit
VN1304/VN1306/VN1310
7-193
7
8V
Output Characteristics
1.6
1.2
0.8
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
1.6
1.2
0.8
0.4
V
DS
(volts)
Maximum Rated Safe Operating Area
0.1
100
10
1.0
0.1
1.0
10
.01
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
0.4
0.3
0.2
0.1
0
0
2.0
0.4
0.8
1.2
1.6
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Ambient Temperature
0
150
100
50
2.5
2.0
1.5
1.0
0.5
0
125
75
25
T
A
(
C)
P
D
(watts)
TO-92
T
A
= -55
C
T
A
= 25
C
TA = 25
C
T
A
= 125
C
V
DS
= 25V
0
10
20
30
50
40
VGS = 10V
0
2
4
6
10
8
VGS = 10V
4V
2.0
8V
6V
4V
6V
TO-39
0
0
0
2.0
0.5
0.4
TO-92 (pulsed)
TO-92 (DC)
TO-39 (DC)
TO-39
(pulsed)
TO-39
P
D
= 3.5W
T
C
= 25
C
TO-92
P
D
= 1W
T
C
= 25
C
Typical Performance Curves
VN1304/VN1306/VN1310
7-194
VN1304/VN1306/VN1310
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
50
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
10
20
30
40
25
0
2
4
6
8
10
1.5
1.2
0.9
0.6
0.3
-50
0
50
100
150
1.1
1.0
0.9
15
6
1.25
1.0
2.0
1.6
1.2
0.8
0.4
10
8
6
4
2
0
4
8
12
16
20
-50
0
50
100
150
25 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55
C
V
DS
= 25V
25
C
125
C
0
0.3
0.6
0.9
1.5
1.2
3
9
12
f = 1MHz
C
ISS
C
OSS
C
RSS
60 pF
0.75
V
(th)
@ 1mA
R
DS(ON)
@ 10V, 500mA
R
DS(ON)
@ 5V, 50mA
0
0
0
0
0
Typical Performance Curves
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