1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2106
VN2110
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Commercial and Military versions available
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Applications
Motor controls
Amplifiers
Power supply circuits
Converters
Switches
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
BV
DSS
/
R
DS(ON)
BV
DGS
(max)
TO-92
TO-236AB*
Die
60V
4.0
VN2106N3
--
100V
4.0
--
VN2110K1
VN2110ND
MIL visual screening available
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Product marking for SOT-23:
N1A
where
= 2-week alpha date code
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
* Distance of 1.6 mm from case for 10 seconds.
TO-236AB
(SOT-23)
top view
TO-92
S G D
S
D
G
2
Package
I
D
(continuous)
I
D
(pulsed)
Power Dissipation*
jc
ja
I
DR
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.3A
1.0A
1.0W
125
170
0.3A
1.0A
TO-236AB
0.2A
0.8A
0.36W (T
A
= 25
C)
200
350
0.2A
0.8A
I
D
(continuous) is limited by max rated T
j
.
*
Total for package.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
VN2110
100
V
I
D
= 1mA, V
GS
= 0V
Breakdown Voltage
VN2106
60
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-5.5
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
0.1
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.6
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
4.5
6.0
V
GS
= 5V, I
D
= 75mA
ON-State Resistance
3.0
4.0
V
GS
= 10V, I
D
= 500mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.70
1.0
%/
C
V
GS
= 10V, I
D
= 500mA
G
FS
Forward Transconductance
150
400
m
V
DS
= 25V, I
D
=0.5A
C
ISS
Input Capacitance
35
50
C
OSS
Common Source Output Capacitance
13
25
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
4
5
t
d(ON)
Turn-ON Delay Time
3
5
t
r
Rise Time
5
8
t
d(OFF)
Turn-OFF Delay Time
6
9
t
f
Fall Time
5
8
V
SD
Diode Forward Voltage Drop
1.2
1.8
V
I
SD
= 0.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= 0.6A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
VN2106/VN2110
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
C unless otherwise specified)
Thermal Characteristics
V
DD
= 25V
ns
I
D
= 0.6A
R
GEN
= 25
3
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
V
DS
(volts)
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
Maximum Rated Safe Operating Area
0.1
100
10
1
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0
0.4
0.2
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
1.0
0
125
75
25
T
C
(
C)
P
D
(watts)
TO-92
P
D
= 1W
T
C
= 25
C
TO-92
T
A
= -55
C
V
DS
= 25V
0
10
20
30
50
40
4V
3V
0
2
4
6
10
8
25
C
125
C
VGS =
7V
9V
0.6
1.0
0.8
10V
8V
6V
5V
2.0
1.6
1.2
0.8
0.4
0
4V
3V
7V
9V
10V
8V
6V
5V
VGS =
TO-92 (DC)
TA = 25
C
TO-92 (pulsed)
TO-236AB
10
1.0
0.1
0.01
SOT-23 (pulsed)
SOT-23 (DC)
TO-236AB
P
D
= 0.36W
T
A
= 25
C
VN2106/VN2110
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
GS(th)
and R
DS(ON)
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
50
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
10
20
30
40
25
0
0
2
4
6
8
10
2.0
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
1.1
1.0
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
30 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55
C
V
DS
= 25V
125
C
0
0.5
1.0
1.5
2.5
2.0
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
90 pF
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
25
C
0
R
DS(ON)
@ 10V, 0.5A
VN2106/VN2110
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