1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
VN2406
VN2410
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
240V
6.0
1.0A
VN2406L
240V
10
1.0A
VN2410L
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Note: See Package Outline section for dimensions.
TO-92
Ordering Information
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
S G D
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
VN2406/VN2410
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
240
V
GS(th)
Gate Threshold Voltage
0.8
2
V
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
= 20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
V
GS
= 0V, V
DS
= 120V
500
A
V
GS
= 0V, V
DS
= 120V
T
A
= 125
C
I
D(ON)
ON-State Drain Current
1.0
A
V
GS
= -10V, V
DS
= 15V
R
DS(ON)
All
10
V
GS
= 2.5V, I
D
= 0.1A
VN2410
10
V
GS
= 10V, I
D
= 0.5A
VN2406
6
V
GS
= 10V, I
D
= 0.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
1.4
%/
C
V
GS
= 10V, I
D
= 0.55A
G
FS
Forward Transconductance
300
m
V
DS
= 10V, I
D
= 0.5A
C
ISS
Input Capacitance
125
C
OSS
Common Source Output Capacitance
50
pF
C
RSS
Reverse Transfer Capacitance
20
t
d(ON)
Turn-ON Delay Time
8
t
r
Rise Time
8
t
d(OFF)
Turn-OFF Delay Time
23
t
f
Fall Time
24
V
SD
Diode Forward Voltage Drop
VN2410
1.2
V
V
GS
= 0V, I
SD
= 0.19A
VN2406
1.2
V
V
GS
= 0V, I
SD
= 0.8A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
V
V
GS
= 0V, I
D
= 0.1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 60V
I
D
= 0.4A
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.9A
5.0A
1.0W
125
170
0.18A
1.7A
*
I
D
(continuous) is limited by max rated T
j
.
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