1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN3205
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
D
1
D
4
G
1
G
4
S
1
S
4
NC
NC
S
2
S
3
G
2
G
3
D
2
D
3
Package Options
Note: See Package Outline section for dimensions.
1
7
6
5
4
3
2
top view
14
13
12
11
10
9
8
14-pin DIP
TO-243AA
(SOT-89)
S G D
G
D
S
D
BV
DSS
/
R
DS(ON)
V
GS(th)
Order Number / Package
BV
DGS
(max)
(max)
TO-92
14-Pin P-DIP
TO-243AA*
Die
50V
0.3
2.4V
VN3205N3
VN3205N6
VN3205N8
VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available
Ordering Information
N-Channel Enhancement-Mode
Vertical DMOS FETs
Product marking for TO-243AA:
VN2L
Where
= 2-week alpha date code
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
50
V
V
GS
= 0V, I
D
= 10mA
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 10mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.3
-5.5
mV/
C
V
GS
= V
DS
, I
D
= 10mA
I
GSS
Gate Body Leakage
1
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
3.0
14
A
V
GS
= 10V, V
DS
= 5V
R
DS(ON)
TO-92 and P-DIP
0.45
V
GS
= 4.5V, I
D
= 1.5A
SOT-89
0.45
V
GS
= 4.5V, I
D
= 0.75A
TO-92 and P-DIP
0.3
V
GS
= 10V, I
D
= 3A
SOT-89
0.3
V
GS
= 10V, I
D
= 1.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.85
1.2
%/
C
V
GS
= 10V, I
D
= 3A
G
FS
Forward Transconductance
1.0
1.5
V
DS
= 25V, I
D
= 2A
C
ISS
Input Capacitance
220
300
C
OSS
Common Source Output Capacitance
70
120
pF
C
RSS
Reverse Transfer Capacitance
20
30
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
25
V
SD
Diode Forward Voltage Drop
1.6
V
V
GS
= 0V, I
SD
= 1.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 1A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
1.2A
8.0A
1.0W
125
170
1.2A
8.0A
SOT-89
1.5A
8.0A
1.6W (T
A
= 25
C)
15
78
1.5A
8.0A
Plastic DIP
1.5A
8.0A
3.0W
41.6
83.3
1.5A
8.0A
*
I
D
(continuous) is limited by max rated T
j
. T
A
= 25
C.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Total for package.
VN3205
Electrical Characteristics
(@ 25
C unless otherwise specified)
ns
Thermal Characteristics
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V
I
D
= 2A
R
GEN
= 10
Static Drain-to-Source
ON-State Resistance
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
3
Output Characteristics
20
16
12
8
4
0
V
DS
(volts)
V
DS
(volts)
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
Maximum Rated Safe Operating Area
0
100
10
1
10
1.0
0.1
.01
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
5
4
3
2
1
0
0
4
2
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Temperature
0
150
100
50
2.0
1.6
1.2
0.8
0.4
0
125
75
25
T
C
(
C)
P
D
(watts)
P-DIP
TO-243AA (TA = 25
C)
TO-92
T
A
= -55
C
0
10
20
30
50
40
4V
3V
0
2
4
6
10
8
125
C
6
10
8
10V
8V
6V
20
16
12
8
4
0
4V
3V
10V
8V
6V
TO-92 (pulsed)
P-DIP (pulsed)
TO-243AA (DC)
TO-92 (DC)
P-DIP (DC)
V
GS
=
V
GS
=
V
DS
= 25V
TO-243AA
T
A
= 25
C
P
D
= 1.6W
TO-243AA
(pulsed)
T
C
= 25
C
TO-92
P
D
= 1W
T
C
= 25
C
25
C
Typical Performance Curves
VN3205
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
DS(ON)
GS(th)
and R
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
300
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
0
10
20
30
40
100
400
200
0
0
2
4
6
8
10
10
8
6
4
2
0
-50
0
50
100
150
1.1
1.0
1.0
0.8
0.6
0.4
0.2
0
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0
1
2
3
4
5
-50
0
50
100
150
325 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10V
T
= -55
C
A
V
DS
= 25V
125
C
0
4
8
12
20
16
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
215 pF
1.6
1.4
1.2
1.0
0.8
0.6
V
GS(th)
@ 1mA
25
C
0
R
DS(ON)
@ 10V, 3A
VN3205
Typical Performance Curves
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