1
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP0104
VP0106
VP0109
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
Die
-40V
8.0
-0.5A
VP0104N3
--
-60V
8.0
-0.5A
VP0106N3
--
-90V
8.0
-0.5A
VP0109N3
VP0109ND
TO-92
Ordering Information
S G D
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
-0.25A
-0.8A
1.0W
125
170
-0.25A
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
VP0104/VP0106/VP0109
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VP0109
-90
VP0106
-60
VP0104
-40
V
GS(th)
Gate Threshold Voltage
-1.5
-3.5
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
5.8
6.5
mV/
C
I
D
= -1.0mA, V
GS
= V
DS
I
GSS
Gate Body Leakage
-1.0
-100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-10
A
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
-0.15
-0.25
V
GS
= -5V, V
DS
= -25V
-0.50
-1.2
V
GS
= -10V, V
DS
= -25V
R
DS(ON)
11
15
V
GS
= -5V, I
D
= -0.1A
6.0
8.0
V
GS
= -10V, I
D
= -0.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.55
1.0
%/
C
V
GS
= -10V, I
D
= -0.5A
G
FS
Forward Transconductance
150
190
m
V
DS
= -25V, I
D
= -0.5A
C
ISS
Input Capacitance
45
60
C
OSS
Common Source Output Capacitance
22
30
pF
C
RSS
Reverse Transfer Capacitance
3
8
t
d(ON)
Turn-ON Delay Time
4
6
t
r
Rise Time
3
10
t
d(OFF)
Turn-OFF Delay Time
8
12
t
f
Fall Time
4
10
V
SD
Diode Forward Voltage Drop
-1.2
-2.0
V
I
SD
= -1.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= -1.0A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
V
I
D
= -1.0mA, V
GS
= 0V
-1 mA
A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
Static Drain-to-Source
ON-State Resistance
BV
DSS
Drain-to-Source
Breakdown Voltage
V
DD
= -25V
ns
I
D
= -0.5A
R
GEN
= 25
Electrical Characteristics
(@ 25
C unless otherwise specified)
3
Typical Performance Curves
VP0104/VP0106/VP0109
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
D
Saturation Characteristics
0
-2
-4
-6
-10
-8
V
DS
(volts)
Maximum Rated Safe Operating Area
-0.1
-100
-10
-1.0
-0.1
-1.0
-10
-0.01
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
250
200
150
100
50
0
0
-1.0
-0.2
-0.4
-0.6
-0.8
G
FS
(millisiemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
125
75
25
T
C
(
C)
P
D
(watts)
T
A
= 125
C
T
A
= 25
C
T
A
= -55
C
V
DS
= -25V
TO-92
0
-10
-20
-30
-50
-40
VGS
= -10V
-6V
-8V
-4V
TO-92(DC)
TC = 25
C
-1.0
-0.8
-0.6
-0.4
-0.2
0
VGS
= -10V
-6V
-4V
-8V
0
TO-92
P
D
= 1W
T
C
= 25
C
1.0
0
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
07/08/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VP0104/VP0106/VP0109
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
DSS
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
-10
-20
-30
-40
0
-2
-4
-6
-8
-10
-50
0
50
100
150
1.10
1.06
1.02
0.98
0.94
0.90
1.6
1.4
1.2
1.0
0.8
-50
0
50
100
150
-1.0
-0.8
-0.6
-0.4
-0.2
V
DS
= -25V
T
A
= -55
C
T
A
= 25
C
T
A
= 125
C
f = 1MHz
C
ISS
C
OSS
C
RSS
-10
-8
-6
-4
-2
0.2
0.4
0.6
0.8
1.0
0
70 pF
V
DS
=
-40V
V
DS
= -10V
45pF
50
40
30
20
10
0
-1.5
-0.3
-0.6
-0.9
-1.2
V
GS
= -5V
V
GS
= -10V
0
0
0
V
(th)
@ -1.0mA
R
DS(ON)
@ -10V, -0.5A
R
DS(ON)
@ -5V, 0.1A
1.6
1.4
1.2
1.0
0.8
0.6
70 pF
R
DS(ON)
(normalized)
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