1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSS
/
R
DS(ON)
I
D(ON)
Order Number / Package
BV
DGS
(max)
(min)
TO-92
TO-243AA*
Die
-30V
0.6
-4.0A
VP3203N3
VP3203N8
VP3203ND
*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
VP3203
Ordering Information
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
VP2L
Where
= 2-week alpha date code
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-92
-0.65A
-4.0A
0.74W
125
170
-0.65A
-4.0A
TO-243AA
-1.1A
-4.0A
1.6W
15
78
-1.1A
-4.0A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
VP3203
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -10mA
V
GS(th)
Gate Threshold Voltage
-1.0
-3.5
V
V
GS
= V
DS
, I
D
= -10mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.5
mV/
C
V
GS
= V
DS
, I
D
= -10mA
I
GSS
Gate Body Leakage
-1.0
-100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-10
A
V
GS
= 0V, V
DS
= Max Rating
-1
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
-14
A
V
GS
= -10V, V
DS
= -5V
R
DS(ON)
TO-92
1.0
V
GS
= -4.5V, I
D
= -1.5A
SOT-89
1.0
V
GS
= -4.5V, I
D
= -0.75A
TO-92
0.6
V
GS
= -10V, I
D
= -3A
SOT-89
0.6
V
GS
= -10V, I
D
= -1.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
%/
C
V
GS
= -10V, I
D
= -1.5A
G
FS
Forward Transconductance
1.0
2.0
V
DS
= -25V, I
D
= -2A
C
ISS
Input Capacitance
200
300
C
OSS
Common Source Output Capacitance
100
120
pF
C
RSS
Reverse Transfer Capacitance
45
60
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
25
V
SD
Diode Forward Voltage Drop
-1.6
V
V
GS
= 0V, I
SD
= -1.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= -1A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
ns
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -2A
R
GEN
= 10
Static Drain-to-Source
ON-State Resistance
3
VP3203
Typical Performance Curves
Output Characteristics
-20
-16
-12
-8
-4
0
Saturation Characteristics
-20
-16
-12
-8
-4
0
Maximum Rated Safe Operating Area
-0.1
-100
-10
-1.0
-0.1
-1.0
-10
-0.01
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
0
150
100
50
2.0
1.6
1.2
0.8
0.4
0
125
75
25
TO-243AA
TO-92
T
A
= -55
C
TO-243AA(DC)
TO-92 (DC)
0
-5
-10
-15
-25
-30
-20
0
-2
-4
-6
-10
-8
TO-243AA (pulsed)
TO-92 (pulsed)
T
A
= 25
C
T
A
= 125
C
5
4
3
2
1
0
0
-1
-2
-3
-5
-4
-6V
-4V
-3V
-8V
-6V
-4V
-3V
-8V
TO-243AA
T
A
= 25
C
P
D
= 1.6W
T
= 25
A
C
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
V
DS
(volts)
V
GS
= -10V
V
GS
= -10V
G
FS
(siemens)
I
D
(amperes)
T
A
(
C)
P
D
(watts)
V
DS
= -25V
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
TO-92
P
D
= 1W
T
C
= 25
C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VP3203
Typical Performance Curves
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
300
225
150
75
0
C (picofarads)
-0
-10
-20
-30
0
-2
-4
-6
-8
-10
-10
-8
-6
-4
-2
0
-50
0
50
100
150
1.1
1.0
2.0
1.6
1.2
0.8
0.4
0
1.4
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
-10
-8
-6
-4
-2
0
-50
0
50
100
150
1
2
3
4
5
V
GS
= -10V
125
C
0
-4
-8
-12
-20
-16
f = 1MHz
0.9
335pF
V
(th)
@ -10mA
R
DS(ON)
@ -10V, -3A
25
C
0
200 pF
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= -5V
T
j
(
C)
V
GS(th)
(normalized)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
(amperes)
R
DS(ON)
(normalized)
V
DS
= -25V
T
A
= -55
C
Q
G
(nanocoulombs)
V
GS
(volts)
V
DS
(volts)
V
DS
=
-20V
V
DS
= -10V
C
ISS
C
OSS
C
RSS
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