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Электронный компонент: THM1001TE

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Kumchun
Kumchun
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Seoul, Korea. 153
Seoul, Korea. 153
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023
023
http://
http://
www.tachyonics.co.kr
www.tachyonics.co.kr
Rev. 1.1
Rev. 1.1
THM1001TE
SiGe HBT MMIC
POWER AMPLIFIER
Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is
designed for 2.4GHz wireless applications including Bluetooth
tm
Class 1 wireless
technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output
power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier
output and antenna.
The silicon-germanium structure of the THM1001TE, and its exposed-die-pad
package, soldered to the system PCB, provide high thermal conductivity and a
subsequently low junction temperature.
Features
+23 dBm at 44% Power Added Efficiency
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP8 Plastic Package
E_PAD MSOP8
Applications
Bluetooth
tm
Wireless Technology (Class 1)
USB Dongles, modules
PCMCIA, Flash cards
Access Points
2.4GHz cordless telephone
1
2
3
4
5
6
7
8
VCTRL
VRAMP
NC
VCC1
IN
VCC0
NC
OUT/
VCC2
GND
Die
PAD
Pin Configuration
Pin Description
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8,
Gasan
Gasan
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dong,
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Kumchun
Kumchun
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Gu
Gu
Seoul, Korea. 153
Seoul, Korea. 153
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-
023
023
http://
http://
www.tachyonics.co.kr
www.tachyonics.co.kr
Rev. 1.1
Rev. 1.1
Pin No
Name
Description
1
V
CTL
Controls the output level of the power amplifier.
2
V
RAMP
Power amplifier enable pin.
3
NC
No connection.
4
IN
Power amplifier RF input.
5
V
CC0
Bias supply voltage.
6
V
CC1
Stage 1 collector supply voltage.
7
NC
No connection.
8
OUT/V
CC2
Power Amplifier Output and Stage 2 collector supply voltage.
Die Pad
GND
Heatslug Die Pad is ground.
Function Block Diagram
Interstage
Matching Block
BIAS / Control Block
Stage 1
Stage 2
V
CC1
P
IN
P
OUT
/V
CC2
V
CC0
V
CTRL
V
RAMP
THM1001TE
Absolute Maximum Ratings
DC Electrical Characteristics
Parameter
Symbol
Unit
Min
Max
Supply Voltage
Vcc
V
-0.3
+3.6
Control Voltage
V
CTL
V
-0.3
Vcc
Ramping Voltage
V
RAMP
V
-0.3
Vcc
-40
T
STG
Storage Temperature
Range
C
-40
+150
+8
+85
+150
IN
T
A
Tj
RF Input Power
dBm
Operating Temperature
Range
C
Maximum Junction
Temperature
C
Condition : V
CC0
=V
CC1
=V
CC2
=V
RAMP
=3.3V, T
A
=25,
Input and Output externally matched to 50 unless otherwise noted.
Operation in excess of any one of above Absolute Maximum Ratings may result in
permanent damage.
Handling and assembly of this device should be at ESD protected workstations.
THM1001TE
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
3.3
V
Icc
1
Supply Current
(Icc=Ivcc0+Ivcc2), V
CTL
=3.3V
90
150
mA
ICCtemp
3
Supply Current Variation over
Temperature from T
A
=25
(-40<T
A
<+85)
TBD
%
V
CTL
PA Output Power Control Voltage
Range
0 ~ VCC
V
I
CTL
1
Current sunk by V
CTL
Pin
130
3
Logic High Voltage
2.4
V
3
Logic Low Voltage
0.4
V
Istby
1
Leakage Current when Vramp=0V,
Vctl=high
3
10
V
RAMP
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8,
8,
Gasan
Gasan
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dong,
dong,
Kumchun
Kumchun
-
-
Gu
Gu
Seoul, Korea. 153
Seoul, Korea. 153
-
-
023
023
http://
http://
www.tachyonics.co.kr
www.tachyonics.co.kr
Rev. 1.1
Rev. 1.1
Page
Page 4
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60
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8,
8,
Gasan
Gasan
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dong,
dong,
Kumchun
Kumchun
-
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Gu
Gu
Seoul, Korea. 153
Seoul, Korea. 153
-
-
023
023
http://
http://
www.tachyonics.co.kr
www.tachyonics.co.kr
Rev. 1.1
Rev. 1.1
THM1001TE
AC Electrical Characteristics
Condition : V
CC0
=V
CC1
=V
CC2
=V
RAMP
=3.3V, PIN=+2dBm, T
A
=25, f=2.45GHz,
Input and Output externally matched to 50 unless otherwise noted.
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
G
VAR
3
Gain Variation over band (2400-2500
MHz)
0.7
1.0
dB
2f,3f,4f,5f
3, 4
Harmonics
35
30
dBc
|S
21
|
OFF
2
Isolation in "OFF" State, P
IN
=+2dBm,
V
RAMP
=0V
35
dB
|S
12
|
2
Reverse Isolation
34
dB
fL-U
3
Frequency Range
2400 ~ 2500
MHz
1
Output Power @P
IN
= +2dBm, V
CTL
=3.3V
22
23
dBm
1
Output Power @P
IN
= +2dBm, V
CTL
=0.4V
-20
-10
dBm
Ptemp
3
Output Power Variation over temperature
(-40<TA<+85)
TBD
dB
dP
OUT
/dV
CTL
3
Control Voltage Sensitivity
120
dBm/V
PAE
Power Added Efficiency at +23dBm
Output Power
44
%
G
3
Gain @ P
IN
= -20dBm
Gain @ P
IN
= -10dBm
25
24
26
25
dB
dB
STAB
2
Stability (P
IN
=+2dBm, Load VSWR=6:1)
All non-harmonically
Related outputs less than 50dBc
Pout
Notes : (1) Guaranteed by production test at T
A
=25.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
Page
Page 5
60
60
-
-
8,
8,
Gasan
Gasan
-
-
dong,
dong,
Kumchun
Kumchun
-
-
Gu
Gu
Seoul, Korea. 153
Seoul, Korea. 153
-
-
023
023
http://
http://
www.tachyonics.co.kr
www.tachyonics.co.kr
Rev. 1.1
Rev. 1.1
THM1001TE
Typical Characteristics
Output power v.s. input power
5
10
15
20
25
30
-20
-15
-10
-5
0
5
Pin [dBm]
Po
u
t

[
d
B
m
]
Gain v.s. input power
5
10
15
20
25
30
-20
-15
-10
-5
0
5
Pin [dBm]
Ga
i
n

[
d
B
]
Supply current v.s. input power
40
60
80
100
120
140
160
180
200
-20
-15
-10
-5
0
5
Pin [dBm]
Ic
c

[
m
A
]
Power Added Efficiency v.s. input Power
0
5
10
15
20
25
30
35
40
45
50
-20
-15
-10
-5
0
5
Pin [dBm]
PA
E

[
%
]