THN4201 Series
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
Pin Configuration
o High Gain
Pin No
MAG = 10.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 20 mA
1
MAG = 8.5 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
2
o High Transition Frequency
3
f
T
= 16.5 GHz Typ. @ V
CE
= 3 V, I
C
= 20 mA
Available Package
Product
h
FE
Classification
THN4201U
THN4201Z
THN4201E
THN4201KF
Absolute Maximum Ratings
Caution : ESD sensitive device
Unit : mm
SOT623F
1.4
0.8, 0.6t
Dimension
SOT323
SOT343
Package
2.0
1.25, 1.0t
2.0
1.25, 1.0t
E
Emitter
C
Collector
Symbol
Description
B
Base
150
mW
2.5
35
150
-65 ~ 150
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V
V
15
6
Marking
AG1
AG2
h
FE
125 to 300 80 to 160
1.6
0.8, 0.8t
Unit
SOT523
Ratings
V
mA
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/12 -
March-2006
Rev 1.0
THN4201 Series
Electrical Characteristics ( T
A
= 25
)
V
CE
= 6 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
dB
-
-
-
-
-
rn
Noise Resistance
0.04
-
0.05
-
-
Symbol
Parameter
Test Condition
Unit
1.5
-
-
dB
7.5
-
-
dB
MAG Maximum Available Gain
10.3
dB
9.5
GHz
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
16.5
pF
Collector Cut-off Current
V
CB
= 10 V, I
E
= 0 mA
Transition Frequency
V
CE
= 3 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 15 mA
Emitter Cut-off Current
DC Current Gain
8
I
CEO
I
EBO
h
FE
f
T
NFmin
I
CBO
7
-
-
-
-
C
CB
|S
21
|
2
G
A
Associated Gain
0.48
Minimum Noise Figure
Insertion Power Gain
1.7
5
-
-
-
-
80
200
0.5
300
-
0.5
Max.
Min.
Typ.
Value
uA
uA
uA
8.4
-
7.5
6
8.5
8
-
-
-
-
www.tachyonics.co.kr
- 2/12 -
March-2006
Rev 1.0
THN4201 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. I
C
Maximum Available Gain, MAG vs. I
C
6
8
10
12
14
16
18
20
22
24
0.0
0.5
1.0
1.5
2.0
Frequency [GHz]
MAG [dB]
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 3 V
I
C
= 15 mA
4
6
8
10
12
14
16
18
20
0.0
0.5
1.0
1.5
2.0
Frequency [GHz]
|S
21
|
2
[dB]
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 3 V
I
C
= 15 mA
0
5
10
15
20
25
30
35
4
6
8
10
12
14
V
CE
= 1 V
V
CE
= 3 V
f = 2 GHz
V
CE
= 2 V
MA
G
[
d
B
]
I
C
[mA]
0
5
10
15
20
25
30
35
2
4
6
8
10
12
V
CE
= 1 V
V
CE
= 3 V
f = 2 GHz
V
CE
= 2 V
|S
21
|
2
[d
B
]
I
C
[mA]
www.tachyonics.co.kr
- 4/12 -
March-2006
Rev 1.0
THN4201 Series
Transition Frequency, f
T
vs. I
C
C
CB
vs. V
CB
NF vs. I
C
Noise Figure Contours & Constant Gain
V
CE
= 3 V, I
C
= parameter, Z
S
= Z
Sopt
f = 1 GHz or 2GHz, V
CE
= 3 V, I
C
= 5 mA
6
8
10
12
14
16
18
20
22
0
5
10
15
20
25
30
35
I
C
[mA]
f
T
[GHz]
f = 2 GHz
V
CE
= 1 V
V
CE
= 3 V
0.4
0.45
0.5
0.55
0.6
0
2
4
6
8
10
V
CB
[V]
C
CB
[pF]
f = 1 MHz
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
I
C
[mA]
NF [dB]
f = 1 GHz
f = 2 GHz
f = 1GHz
OPT
=0.22496
Fmin =1.05dB
=1.1dB
=1.2dB
3 contour
Ga=13dB
=14dB
=15dB
3contour
f = 2GHz
OPT
=0.330-166
Fmin =1.45dB
=1.5dB
=1.6dB
3 contour
Ga=10dB
=9dB
=8dB
3contour
www.tachyonics.co.kr
- 5/12 -
March-2006
Rev 1.0
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