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THN5602F
The THN5602F is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-89 SMD package.
The THN5602F can be used as a driver device or
an output device, depending on the specific app-
lication.
FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz
PIN CONFIGURATION
APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60 ; note 1
T
STG
Storage Temperature
T
J
Operating Juction Temperature
4
350
8
base
collector
emitter
b
c
V
V
collector
20
3
e
4
c
PIN NO
SYMBOL
DESCRIPTION
SYMBOL
PARAMETER
CONDITION
VALUE
UNIT
1
2
V
mA
W
-65 ~ 150
150
1
NPN SiGe RF POWER
TRANSISTOR
4
SOT-89
Unit : mm
www.tachyonics.co.kr
-1/6-
Sep-2003
Rev 1.1
THN5602F
THERMAL CHARACTERISTICS
Rth j-s
PT=1W; Ts=60;note1
* Note 1. Ts is temperature at the soldering point of the collector pin.
QUICK REFERENCE DATA
RF performance at Ts 60 in common emitter test circuit (see Fig 6.)
60
CW, class-AB
465
UNIT
thermal resistance from junction
to soldering point
K/W
C
[%]
G
P
[dB]
P
L
[mW]
V
CE
[V]
f [MHz]
Mode of Operation
SYMBOL
VALUE
4.8
630
10
PARAMETER
CONDITION
55
www.tachyonics.co.kr
-2/6-
Sep-2003
Rev 1.1
THN5602F
DC CHARACTERISTICS
Tj=25 unless otherwise specified
BV
CBO
collector-base breakdown voltage
open emitte
BV
CEO
collector-emitter breakdown voltage
open base
BV
EBO
emitter-base breakdown voltage
open collector
I
S
collector leakage current
h
FE
DC current gain
Cc
collector capacitance
Fig 1. DC Current gain v.s collector current
Fig 2. Collector-base capacitance v.s collector-
base voltage(DC)
4.5
pF
200
V
0.1
mA
V
8
V
SYMBOL
PARAMETER
CONDITION
MIN.
MAX.
UNIT
20
3
60
0
20
40
60
80
100
120
140
160
0.00
0.10
0.20
0.30
0.40
0.50
Ic(A)
Hfe
2
3
4
5
6
0
2
4
6
8
10
V
CE
= 4.8V ; Tj =25
f=900MHz; V
CE
=4.8V; I
CQ
=5mA; Ts < 60
Cc
[pF]
V
CB
[V]
www.tachyonics.co.kr
-3/6-
Sep-2003
Rev 1.1
THN5602F
APPLICATION INFORMATION
RF performance at Ts 60 in common emitter configuration.
THN5602F Source/Load Impedance as a frequency
THN5602F Transistor Impedance
V
CE
= 4.8V, I
CQ
= 5mA, Pout = 28dBm
Fig 3. Source Impedance (series components) as Fig 4. Load Impedance (series components) as
a freq, typical values.
a freq, typical values.
C
[%]
10
60
Mode of Operation
f [MHz]
V
CE
[V]
P
L
[mW]
Freq.
R
L
X
L
630
CW, class-AB
465
4.8
Z
S
[]
Z
L
[]
Rs
Xs
440
17.34
17.21
[MHz]
6.91
7.89
8.90
9.95
22.21
19.31
17.20
15.66
470
17.09
450
460
17.12
7.07
2.58
19.00
G
P
[dB]
-0.59
Z
L
Zs
-10
-5
0
5
10
15
20
25
30
430
440
450
460
470
480
Freq [MHz]
R
L
X
L
Z
L
[]
4
6
8
10
12
14
16
18
20
430
440
450
460
470
480
Freq[MHz]
Rs
Xs
Z
S
[]
www.tachyonics.co.kr
-4/6-
Sep-2003
Rev 1.1
THN5602F
Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm
Test condition : CW test, V
CC
= 4.8 V, I
CQ
= 5 mA, frequency = 465 MHz.
8pF
7pF
12pF
C2
C5
C6
1nF
100nF
C9,C12
C8,C13
Fig 5. THN5602F Test Circuit Board Layout @ f = 465MHz
Fig 6. Test Circuit Schematic Diagram @f = 465MHz
8.2nH
3turn
8turn
L1(Chip L : 1608)
L2,L3,L4 (Air Coil)
L5,L6 (Air Coil)
2 mm
6pF
470pF
C1, C7,C10,C11
C3,C4
Part List
Air Coil Diameter
Unit : mm
79.5
50
RF IN
Vcc
RF_OUT
THN5602F Test Circuit Schematic Diagram
THN5602F
: Air Coil
www.tachyonics.co.kr
-5/6-
Sep-2003
Rev 1.1
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