THN6201S
DESCRIPTION
The THN6201S is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT23 package
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, V
CE
=3V, Ic=5mA
N.F = 1.5dB TYP. @ f=2GHz, V
CE
=3V, Ic=5mA
o High Gain
MSG = 16.5dB TYP. @ f=1GHz, V
CE
=3V, Ic=15mA
MAG = 11.5dB TYP. @ f=2GHz, V
CE
=3V, Ic=15mA
o High Transition Frequency
f
T
= 12GHz TYP. @ f=2GHz, V
CE
=3V, Ic=15mA
PIN CONFIGURATION
MARKING : AC1
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60
T
STG
Storage Temperature
T
J
Operating Junction Temperature
150
V
V
25
12
2.5
35
V
mA
Base
Emitter
Collector
mW
150
-65 ~ 150
SYMBOL
PARAMETER
CONDITION
VALUE
PIN NO
SYMBOL
DESCRIPTION
Unit
1
2
3
B
E
C
NPN Planer RF TRANSISTOR
SOT-23
Unit : mm
www.tachyonics.co.kr
- 1/12 -
Aug-2003
THN6201S
Electrical Characteristics ( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
PARAMETER
n A
n A
V
CE
=3V, Ic=5mA,f=2GHz
V
CE
=3V, Ic=5mA,f=1GHz
130
V
CE
=3V, Ic=15mA,f=2GHz
CONDITION
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=15mA,f=1GHz
V
CE
= 3V, Ic = 15mA
Unit
20
12
25
14
V
V
min
typ
V
CE
=3V, Ic=15mA,f=2GHz
V
CE
=3V, Ic=5mA,f=1GHz
9.5
8.5
16
16.5
10.5
11
1.1
G
A
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
f
T
C
CB
V
CB
= 10V, f = 1MHz
0.47
SYMBOL
12
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
PARAMETER
CONDITION
VALUE
V
CE
= 3V, Ic = 15mA
300
100
max
300
pF
Unit
min
typ
max
VALUE
GHz
13
14.5
7.5
Associated Gain
V
CE
=3V, Ic=5mA,f=2GHz
V
CE
=3V, Ic=15mA,f=2GHz
[S21]
2
MSG
MAG
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=5mA,f=2GHz
Maximum Available Gain
V
CE
=3V, Ic=15mA,f=1GHz
Insertion Power Gain
Maximum Stable Gain
dB
dB
rn
Noise Resistance
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=5mA,f=2GHz
0.06
0.04
NFmin
P
-1dB
1dB Compression point
dB
Minium Noise Figure
V
CE
=3V, Ic=5mA,f=2GHz
1.5
V
CE
=3V, Ic=15mA,f=1GHz
14
15.5
V
CE
=3V, Ic=15mA,f=1GHz
(Zs=Zsopt, Z
L
=Z
L
opt)
10
dBm
dB
10.5
www.tachyonics.co.kr
- 2/12 -
Aug-2003
THN6201S
Power Gain : Gmax vs. Icc
Power Gain : Gmax vs. Icc
Power Gain : MSG vs. Frequency
Power Gain : S
21
vs. Frequency
9
11
13
15
17
19
0
5
10
15
20
25
30
35
40
Icc [mA]
Gmax [dB]
6
8
10
12
14
0
5
10
15
20
25
30
35
40
Icc [mA]
Gmax [dB]
V
CE
=8V
V
CE
=3V
V
CE
=2V
f = 1GHz
V
CE
=8V
Icc=15mA
V
CE
=3V
Icc=15mA
MAX Gain
[
dB
]
S21[dB]
V
CE
=8V
Icc=15mA
V
CE
=3V
Icc=15mA
V
CE
=8V
V
CE
=3V
V
CE
=2V
f = 2GHz
0.5
1.0
1.5
2.0
2.5
0.0
3.0
6
8
10
12
14
16
18
20
4
22
freq, GHz
0.5
1.0
1.5
2.0
2.5
0.0
3.0
8
10
12
14
16
18
20
22
6
24
freq, GHz
www.tachyonics.co.kr
- 4/12 -
Aug-2003
THN6201S
C
CB
vs. V
CB
Fmin vs. Icc
Noise Figure Contours & Constant Gain
V
CE
= 3V, Icc = parameter, Zs = Zsopt
f = 1 GHz,
2GHz
, V
CE
= 3V, Icc = 5mA
Transition Frequency : f
T
vs. Icc
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
Icc [mA]
f
T
[GHz]
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
Icc [mA]
Fmin
[
d
B]
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0
5
10
15
20
V
CB
[V]
Ca
pa
cit
a
n
ce C
CB
[pF]
f = 1MHz
f = 1GHz
OPT
=0.25140
Fmin =1.05dB
=1.1dB
=1.2dB
3 contour
Input Stable
Output Stable
Ga=16dB
=15dB
=14dB
3contour
f = 1GHz
V
CE
=8V
V
CE
=3V
V
CE
=2V
f = 2GHz
f = 2GHz
f = 2GHz
OPT
=0.45-170
Fmin =1.45dB
=1.5dB
=1.6dB
3 contour
Ga=9dB
=10dB
=11dB
3contour
www.tachyonics.co.kr
- 5/12 -
Aug-2003
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