THN6201 series
Applications
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
Pin Configuration
o High Power Gain
Pin No
MAG = 18.5 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 15 mA
1
13 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 15 mA
2
o High Transition Frequency
3
f
T
= 12 GHz Typ. @ V
CE
= 3 V, I
C
= 15 mA
Available Package
Product
h
FE
Classification
THN6201S
THN6201U
THN6201Z
THN6201E
Absolute Maximum Ratings
THN6201KF
Caution : ESD sensitive device
V
2.5
mA
mW
12
Collector
C
SOT623F
V
V
20
Package
Dimension
Description
Emitter
Base
Ratings
E
1.4
0.8, 0.6t
Unit : mm
2.9
1.3, 1.2t
SOT323 2.0
1.25, 1.0t
Symbol
SOT343 2.0
1.25, 1.0t
SOT523
1.6
0.8, 0.8t
SOT23
B
Unit
AC1
AC2
Marking
h
FE
Value 125 to 300
80 to 160
Total Power Dissipation
150
-65 ~ 150
150
Collector Current (DC)
35
T
J
I
C
P
T
T
STG
Operating Junction Temperature
Storage Temperature
V
CEO
V
EBO
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Parameter
Symbol
V
CBO
Collector to Base Breakdown Voltage
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/13 -
Aug.-2005
Rev 2.0
THN6201 series
Electrical Characteristics ( T
A
= 25
)
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector to Base Capacitance
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
-
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
-
-
12.5
14
8
13
6
7.5
-
11.5
-
-
-
uA
uA
Value
uA
V
CB
= 10 V, f = 1 MHz
-
-
-
Unit
Min. Typ. Max.
-
9.5
17
18.5
12
13
1.1
Associated Gain
G
A
0.12
0.06
MAG
rn
Parameter
Test Condition
C
CB
I
CBO
I
CEO
I
EBO
Symbol
0.47
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
(Z
S
= Z
Sopt
, Z
L
= Z
Lopt
)
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 15 mA
-
-
-
-
P
1dB, IN
Input 1dB Compression Point
0.5
13.5
15
8
pF
5
80
200
0.5
300
12
dB
1.5
14.5
16
Maximum Available Gain
15
16.5
10
11
-
-
Minimum Noise Figure
Noise Resistance
NFmin
10
GHz
Insertion Power Gain
dB
10
dBm
dB
11
dB
h
FE
|S
21
|
2
f
T
www.tachyonics.co.kr
- 2/13 -
Aug.-2005
Rev 2.0
THN6201 series
Insertion Power Gain, |S
21
|
2
vs. Frequency
Maximum Available Gain, MAG vs. I
C
Maximum Available Gain, MAG vs. I
C
Maximum Available Gain, MAG vs. Frequency
10
12
14
16
18
20
0
5
10
15
20
25
30
35
40
MAG [dB]
7
9
11
13
15
0
5
10
15
20
25
30
35
40
MAG [dB]
V
CE
= 8 V
V
CE
= 8 V
V
CE
= 3 V
V
CE
= 2 V
f = 1 GHz
f = 2 GHz
0.5
1.0
1.5
2.0
2.5
0.0
3.0
10
12
14
16
18
20
22
24
8
26
freq, GHz
Ma
x
G
a
i
n
1
T
A
R
F
15
02E
s1
_
hf
e
1
7
0
_
6v
15
m
A
_
020
90
9.
.
M
a
x
G
a
i
n
1
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
MAG [dB]
Frequency [GHz]
0.5
1.0
1.5
2.0
2.5
0.0
3.0
8
10
12
14
16
18
20
22
6
24
freq, GHz
d
B
(S
(2
,
1
))
d
B
(
T
A
R
F
1
50
2E
s
1
_
hf
e
1
70
_
6v
15
m
A
_
0
209
09
.
.
S
(
2
,
1
)
)
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 3 V
V
CE
= 2 V
|S
21
|
2
[d
B]
Frequency [GHz]
I
C
[mA]
I
C
[mA]
www.tachyonics.co.kr
- 4/13 -
Aug.-2005
Rev 2.0
PDF 
ZIP
