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Электронный компонент: Q2004LT

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2002 Teccor Electronics
E3 - 1
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
U.L. RECOGNIZED
File #E7163
9
Internally Triggered Triacs (4 A to 15 A)
E3
General Description
Teccor's Quadrac devices are triacs that include a diac trigger
mounted inside the same package. This device, developed by
Teccor, saves the user the expense and assembly time of buying
a discrete diac and assembling in conjunction with a gated triac.
Also, the alternistor Quadrac device (QxxxxLTH) eliminates the
need for a snubber network.
The Quadrac device is a bidirectional AC switch and is gate con-
trolled
for either polarity of main terminal voltage. Its primary pur-
pose is for AC switching and phase control applications such as
speed controls, temperature modulation controls, and lighting
controls where noise immunity is required.
Triac current capacities range from 4 A to 15 A with voltage
ranges from 200 V to 600 V. Quadrac devices are available in the
TO-220 package.
The TO-220 package is electrically isolated to 2500 V rms from
the leads to mounting surface. 4000 V rms is available on special
order. This means that no external isolation is required, thus
eliminating the need for separate insulators and insulator-mount-
ing steps and saving dollars over "hot tab" devices.
All Teccor triac and diac chips have glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Variations of devices in this data sheet are available for custom
design applications. Consult the factory for more information.
Features
Glass-passivated junctions
Electrically-isolated package
Internal trigger diac
High surge capability -- up to 200 A
High voltage capability -- 200 V to 600 V
TO-220
Isolated
MT2
MT1
T
Quadrac
Data Sheets
http://www.teccor.com
E3 - 2
2002 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Specific Test Conditions
[DV] -- Dynamic breakback voltage (forward and reverse)
DV
BO
-- Breakover voltage symmetry
C
T
-- Trigger firing capacitance
di/dt -- Maximum rate-of-change of on-state current
dv/dt -- Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c) -- Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I
2
t -- RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
BO
-- Peak breakover current
I
DRM
-- Peak off-state current gate open; V
DRM
= maximum rated value
I
GTM
-- Peak gate trigger current (10
s Max)
I
H
-- Holding current; gate open
I
T(RMS)
-- RMS on-state current, conduction angle of 360
I
TSM
-- Peak one-cycle surge
t
gt
-- Gate controlled turn-on time
V
BO
-- Breakover voltage (forward and reverse)
V
DRM
-- Repetitive peak blocking voltage
V
TM
-- Peak on-state voltage at maximum rated RMS current
General Notes
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25
C unless otherwise specified.
Operating temperature range (T
J
) is -40
C to +125 C.
Storage temperature range (T
S
) is -40
C to +125 C.
Lead solder temperature is a maximum of +230
C for 10 seconds
maximum;
1/16" (1.59 mm) from case.
The case temperature (T
C
) is measured as shown on dimensional
outline drawings. See "Package Dimensions" section of this
catalog.
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1
(2) See Figure E3.1 for I
H
versus T
C
.
(3) See Figure E3.4 and Figure E3.5 for i
T
versus v
T
.
(4) See Figure E3.9 for surge ratings with specific durations.
I
T(RMS)
Part No.
V
DRM
I
DRM
V
TM
Trigger Diac Specifications (TMT1)
Isolated
DV
BO
V
BO
[
DV ]
I
BO
C
T
(5)
TO-220
(1)
Volts
(1) (10)
mAmps
(1) (3)
Volts
(7)
Volts
(6)
Volts
(6)
Volts
Amps
(11)
Farads
T
C
=
25 C
T
C
=
100 C
T
C
=
125 C
T
C
= 25 C
See "Package Dimensions" section
for variations. (12)
MIN
MAX
MAX
MAX
MIN
MAX
MIN
MAX
MAX
4 A
Q2004LT
200
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4004LT
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6004LT
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
6 A
Q2006LT
200
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4006LT
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6006LT
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4006LTH
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6006LTH
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
8 A
Q2008LT
200
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4008LT
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6008LT
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4008LTH
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6008LTH
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
10 A
Q2010LT
200
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4010LT
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6010LT
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4010LTH
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6010LTH
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
15 A
Q2015LT
200
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4015LT
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6015LT
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q4015LTH
400
0.05
0.5
2
1.6
3
33
43
5
25
0.1
Q6015LTH
600
0.05
0.5
2
1.6
3
33
43
5
25
0.1
MT1
MT2
T
Data Sheets
Quadrac
2002 Teccor Electronics
E3 - 3
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at
specific operating temperature.
(6) See Figure E3.2 and Figure E3.3 for test circuit.
(7)
DV
BO
= [+ V
BO
] - [- V
BO
]
(8) See Figure E3.7 and Figure E3.8 for maximum allowable case
temperature at maximum rated current.
(9) Trigger firing capacitance = 0.1 F with 0.1 s rise time
(10) T
C
= T
J
for test conditions in off state
(11) Maximum required value to ensure sufficient gate current
(12) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
Electrical Isolation
All Teccor isolated Quadrac packages withstand a minimum high
potential test of 2500 V ac rms from leads to mounting tab over
the operating temperature range of the device. The following iso-
lation table shows standard and optional isolation ratings.
* UL Recognized File #E71639
**For 4000 V isolation, use "V" suffix in part number.
I
H
I
TSM
dv/dt(c)
dv/dt
t
gt
I
2
t
I
GTM
di/dt
(1) (2)
mAmps
(4) (8)
Amps
(1) (5) (8)
Volts/Sec
(1)
Volts/Sec
(6) (9)
Sec
Amps
2
Sec
Amps
(9)
Amps/Sec
T
C
=
100 C
T
C
=
125 C
MAX
60/50Hz
MIN
MIN
TYP
40
55/46
3
75
50
3
12.5
1.2
50
40
55/46
3
75
50
3
12.5
1.2
50
40
55/46
3
50
50
3
12.5
1.2
50
50
80/65
4
150
100
3
26.5
1.5
70
50
80/65
4
150
100
3
26.5
1.5
70
50
80/65
4
125
85
3
26.5
1.5
70
50
80/65
25
575
450
3
26.5
1.5
70
50
80/65
25
425
350
3
26.5
1.5
70
60
100/83
4
175
120
3
41
1.5
70
60
100/83
4
175
120
3
41
1.5
70
60
100/83
4
150
100
3
41
1.5
70
60
100/83
25
575
450
3
41
1.5
70
60
100/83
25
425
350
3
41
1.5
70
60
120/100
4
200
150
3
60
1.5
70
60
120/100
4
200
150
3
60
1.5
70
60
120/100
4
175
120
3
60
1.5
70
60
120/100
30
925
700
3
60
1.5
70
60
120/100
30
775
600
3
60
1.5
70
70
200/167
4
300
200
3
166
1.5
100
70
200/167
4
300
200
3
166
1.5
100
70
200/167
4
200
150
3
166
1.5
100
70
200/167
30
925
700
3
166
1.5
100
70
200/167
30
775
600
3
166
1.5
100
Thermal Resistance (Steady State)
R
qJC
[R
qJA
] C/W (TYP)
TYPE
Isolated TO-220
4 A
3.6 [50]
6 A
3.3
8 A
2.8
10 A
2.6
15 A
2.1
Electrical Isolation
from Leads to Mounting Tab *
V AC RMS
TYPE
2500
Standard
4000
Optional **
Quadrac
Data Sheets
http://www.teccor.com
E3 - 4
2002 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Figure E3.1 Normalized DC Holding Current versus Case Temperature
Figure E3.2 Test Circuit
Figure E3.3 Test Circuit Waveforms
Figure E3.4 On-state Current versus On-state Voltage (Typical)
(4 A to 10 A)
Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)
Figure E3.6 Maximum Allowable Ambient Temperature versus
On-state Current
Case Temperature (T
C
) C
-40
-15
+25
+65
+105
I
H
I
H
(T
C
= 25 C)
2.0
1.5
1.0
.5
0
INITIAL ON-STATE CURRENT
= 200 mA DC 4 A to 10 A
= 400 mA DC 15 A
Ratio of
+125
120 V
60 Hz
R
L
D.U.T.
MT2
MT1
V
C
C
T
= 0.1 F
T
V
C
V+
-V
BO
V-
+V
BO
20
18
16
14
12
10
8
6
4
2
0
0
0.6
0.8
1.0
1.2
1.4
1.6
Positive or Negative
Instantaneous On-state Current (i
T
) Amps
Positive or Negative
Instantaneous On-state Voltage (v
T
) Volts
6 A, 8 A, and 10 A
4 A
T
C
= 25 C
90
80
70
60
50
40
30
20
10
0
0
0.6
0.8
1.0
1.2
1.4
1.6
Positive or Negative
Instantaneous On-state Current (i
T
) Amps
15 A
T
C
= 25C
1.8
Positive or Negative
Instantaneous On-state Voltage (v
T
) Volts
120
100
80
60
40
20
RMS On-state Current [I
T(RMS)
] Amps
Maximum Allowable Ambient Temperature (T
A
) C
25
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
4 A
Data Sheets
Quadrac
2002 Teccor Electronics
E3 - 5
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Figure E3.7 Maximum Allowable Case Temperature versus
On-state Current (4 A)
Figure E3.8 Maximum Allowable Case Temperature versus
On-state Current (6 A to 15 A)
Figure E3.9 Peak Surge Current versus Surge Current Duration
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current
(6 A to 10 A and 15 A)
Figure E3.12 Normalized diac V
BO
versus Junction Temperature
RMS On-state Current [I
T(RMS)
] Amps
0
.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Maximum Allowable Case Temperature (T
C
) C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
130
120
110
100
90
80
70
60
0
4 A
RMS On-state Current [I
T(RMS)
] Amps
0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
Maximum Allowable Case Temperature (T
C
) C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
130
120
110
100
90
80
70
60
0
6 A
10 A
8 A
15 A
200
120
40
1
2
3 4 5 6
8 10
20
3040
60 80 100
200
300
600
1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration Full Cycles
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
NOTES:
1) Gates control may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned to
steady state rated value.
15 A
10 A
8 A
6 A
4 A
Average On-state Power Dissipation [P
D(AV)
] Watts
RMS On-state Current [I
T(RMS)
] Amps
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
4 A
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
RMS On-state Current [I
T(RMS)
] Amps
Average On-state Power Dissipation [P
D(AV)
] Watts
15 A
6 A to 10 A
-8
-6
-4
-2
0
+2
+4
-40
-20
0
+20 +40 +60 +80 +100 +120 +140
Junction Temperature (T
J
) C
Percentage of V
BO
Change %