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Электронный компонент: TC1410NEPA

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4-183
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
OUTPUT
INPUT
GND
EFFECTIVE
INPUT
C = 10pF
300mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC1410N
4.7V
TC1410
PIN CONFIGURATIONS
ORDERING INFORMATION
Part No.
Package
Temp. Range
TC1410COA
8-Pin SOIC
0
C to +70
C
TC1410CPA
8-Pin Plastic DIP
0
C to +70
C
TC1410EOA
8-Pin SOIC
40
C to +85
C
TC1410EPA
8-Pin Plastic DIP
40
C to +85
C
TC1410NCOA
8-Pin SOIC
0
C to +70
C
TC1410NCPA
8-Pin Plastic DIP
0
C to +70
C
TC1410NEOA
8-Pin SOIC
40
C to +85
C
TC1410NEPA
8-Pin Plastic DIP
40
C to +85
C
FUNCTIONAL BLOCK DIAGRAM
TC1410/N-8 10/15/96
GENERAL DESCRIPTION
The TC1410/1410N are 0.5V CMOS buffer/drivers .
They will not latch up under any conditions within their power
and voltage ratings. They are not subject to damage when
up to 5V of noise spiking of either polarity occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.
As MOSFET drivers, the TC1410/1410N can easily
switch 500pF gate capacitance in 25nsec with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET's
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
FEATURES
s
Latch-Up Protected: Will Withstand 500mA
Reverse Current
s
Input Will Withstand Negative Inputs Up to 5V
s
ESD Protected ..................................................... 4kV
s
High Peak Output Current ............................... 0.5A
s
Wide Operating Range .......................... 4.5V to 16V
s
High Capacitive Load
Drive Capability ............................ 500pF in 25nsec
s
Short Delay Time .................................. 35nsec Typ
s
Consistent Delay Times With Changes in
Supply Voltage
s
Matched Delay Times
s
Low Supply Current
-- With Logic "1" Input ................................. 500
A
-- With Logic "0" Input ................................. 150
A
s
Low Output Impedance ..................................... 16
s
Pinout Same as TC1411/12/13
TC1410
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
NC = NO INTERNAL CONNECTION
2
6, 7
INVERTING
NOTE: SOIC pinout is identical to DIP.
OUT
TC1410N
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
2
6, 7
NONINVERTING
OUT
4-184
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B . (V
DD
+ 0.3V) to (GND 5.0V)
Maximum Chip Temperature ................................. +150
C
Storage Temperature Range ................ 65
C to +150
C
Lead Temperature (Soldering, 10 sec) ................. +300
C
Package Thermal Resistance
CerDIP R
J-A
................................................ 150
C/W
CerDIP R
J-C
.................................................. 50
C/W
PDIP R
J-A
................................................... 125
C/W
PDIP R
J-C
..................................................... 42
C/W
SOIC R
J-A
................................................... 155
C/W
SOIC R
J-C
..................................................... 45
C/W
Operating Temperature Range
C Version ............................................... 0
C to +70
C
E Version .......................................... 40
C to +85
C
Power Dissipation (T
A
70
C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................ 800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V
V
DD
16V, unless other-
wise specified. Typical values are measured at T
A
=25
C; V
DD
=16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 High Input Voltage
2.0
--
--
V
V
IL
Logic 0 Low Input Voltage
--
--
0.8
V
I
IN
Input Current
5V
V
IN
V
DD
T
A
= 25
C
1
--
1
A
40
C
T
A
85
C
10
--
10
Output
V
OH
High Output Voltage
DC Test
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
DC Test
--
--
0.025
V
R
O
Output Resistance
V
DD
= 16V, I
O
= 10mA
T
A
=25
C
--
16
22
0
C
T
A
70
C
--
20
28
40
C
T
A
85
C
--
20
28
I
PK
Peak Output Current
V
DD
= 16V
--
0.5
--
A
I
REV
Latch-Up Protection
Duty Cycle
2%
0.5
--
--
A
Withstand Reverse Current
t
300
sec
Switching Time (Note 1)
t
R
Rise Time
Figure 1
T
A
= 25
C
--
25
35
nsec
0
C
T
A
70
C
--
27
40
40
C
T
A
85
C
--
29
40
t
F
Fall Time
Figure 1
T
A
= 25
C
--
25
35
nsec
0
C
T
A
70
C
--
27
40
40
C
T
A
85
C
--
29
40
t
D1
Delay Time
Figure 1
T
A
= 25
C
--
30
40
nsec
0
C
T
A
70
C
--
33
45
40
C
T
A
85
C
--
35
45
t
D2
Delay Time
Figure 1
T
A
= 25
C
--
30
40
nsec
0
C
T
A
70
C
--
33
45
40
C
T
A
85
C
--
35
45
Power Supply
I
S
Power Supply Current
V
IN
= 3V
V
DD
= 16V
--
0.5
1.0
mA
V
IN
= 0V
--
0.1
0.15
NOTE: 1. Switching times are guaranteed by design.
V
DD
= 16V
4-185
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
Figure 1. Switching Time Test Circuit
200
0
400
600
800
1000
1200
1400
1600
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMPERATURE (
C)
MAX. POWER (mV)
8 Pin DIP
Thermal Derating Curves
8 Pin CerDIP
8 Pin SOIC
+5V
INPUT
10%
90%
10%
90%
10%
90%
VDD
OUTPUT
tD1
0V
0V
90%
10%
10%
10%
t
F
90%
+5V
INPUT
VDD
OUTPUT
0V
90%
OUTPUT
INPUT
0.1F
CL = 500pF
4.7F
VDD = 16V
Inverting Driver
TC1410
4,5
1,8
6,7
2
Noninverting Driver
TC1410N
tF
tD2
tR
tR
tD1
tD2
INPUT: 100 kHz, square wave,
tRISE = tFALL
10ns
0V
TC1410
TC1410N
4-186
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
0
100
200
300
400
500
16
14
12
10
8
6
4
V
DD
(VOLTS)
Quiescent Supply Current
vs. Supply Voltage
T
A
= 25
C
I
SUPPLY
(
A)
-40
-20
0
20
40
60
80
0
100
200
300
400
500
TEMPERATURE (
C)
Quiescent Supply Current
vs. Temperature
V
SUPPLY
= 16V
I
SUPPLY
(
A)
V
IN
= 3V
V
IN
= 0V
V
IN
= 0V
V
IN
= 3V
1.1
1.2
1.3
1.4
1.5
1.6
16
14
12
10
8
6
4
V
DD
(VOLTS)
Input Threshold
vs. Supply Voltage
T
A
= 25
C
V
THRESHOLD
(VOLTS)
-40
-20
0
20
40
60
80
1.1
1.2
1.3
1.4
1.5
1.6
TEMPERATURE (
C)
Input Threshold
vs. Temperature
V
SUPPLY
= 16V
V
THRESHOLD
(VOLTS)
V
IH
V
IL
V
IL
V
IH
1
3
5
7
9
11
13
16
14
12
10
8
6
4
V
DD
(VOLTS)
High-State Output Resistance
R
ds
(ON) W
Low-State Output Resistance
R
ds
(ON) W
T
A
= 40
C
T
A
= 85
C
T
A
= 25
C
1
3
5
7
9
11
13
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
A
= 40
C
T
A
= 85
C
T
A
= 25
C
TYPICAL CHARACTERISTICS
4-187
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(VOLTS)
Rise Time vs. Supply Voltage
C
LOAD
= 500pF
T
RISE
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(VOLTS)
Fall Time vs. Supply Voltage
C
LOAD
= 500pF
T
FALL
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
D1
Propagation Delay vs. Supply Voltage
C
LOAD
= 500pF
T
D1
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
D2
Propagation Delay vs. Supply Voltage
C
LOAD
= 500pF
T
D2
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
0
500
1000
1500
2000
2500
3000
3500
0
20
40
60
80
100
C
LOAD
(pF)
Rise and Fall Times vs. Capacitive Load
T
A
= 25
C, V
DD
= 16V
T
RISE
, T
FALL
(nsec)
T
FALL
T
RISE
0
500
1000
1500
2000
2500
3000
3500
25
29
33
37
41
45
C
LOAD
(pF)
Propagation Delays vs. Capacitive Load
T
A
= 25
C, V
DD
= 16V
PROPAGATION DELAYS (nsec)
T
D2
T
D1
TYPICAL CHARACTERISTICS (Cont.)