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Электронный компонент: TC1413CPA

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4-201
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
3A HIGH-SPEED MOSFET DRIVERS
TC1413
TC1413N
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
TC1413
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
NC = NO INTERNAL CONNECTION
2
6, 7
INVERTING
NOTE: SOIC pinout is identical to DIP.
OUT
TC1413N
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
2
6, 7
NONINVERTING
OUT
OUTPUT
INPUT
GND
EFFECTIVE
INPUT
C = 10pF
300mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC1413N
4.7V
TC1413
ORDERING INFORMATION
Part No.
Package
Temp.Range
TC1413COA
8-Pin SOIC
0
C to +70
C
TC1413CPA
8-Pin Plastic DIP
0
C to +70
C
TC1413EOA
8-Pin SOIC
40
C to +85
C
TC1413EPA
8-Pin Plastic DIP
40
C to +85
C
TC1413NCOA
8-Pin SOIC
0
C to +70
C
TC1413NCPA
8-Pin Plastic DIP
0
C to +70
C
TC1413NEOA
8-Pin SOIC
40
C to +85
C
TC1413NEPA
8-Pin Plastic DIP
40
C to +85
C
FEATURES
s
Latch-Up Protected: Will Withstand 500mA
Reverse Current
s
Input Will Withstand Negative Inputs Up to 5V
s
ESD Protected ..................................................... 4kV
s
High Peak Output Current .................................. 3A
s
Wide Operating Range .......................... 4.5V to 16V
s
High Capacitive Load
Drive Capability ........................... 180 pF in 20nsec
s
Short Delay Time .................................. 35nsec Typ
s
Consistent Delay Times With Changes in
Supply Voltage
s
Matched Delay Times
s
Low Supply Current
-- With Logic "1" Input ................................... 50
A
-- With Logic "0" Input ................................. 150
A
s
Low Output Impedance .................................... 2.7
s
Pinout Same as TC1410/11/12
GENERAL DESCRIPTION
The TC1413/1413N are 3A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity that occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500 mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.
As MOSFET drivers, the TC1413/1413N can easily
switch 1800pF gate capacitance in 20 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET's
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater output accuracy.
TC1413/N-8 10/14/96
4-202
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(V
DD
+ 0.3V) to (GND 5.0V)
Maximum Chip Temperature ................................. +150
C
Storage Temperature Range ................ 65
C to +150
C
Lead Temperature (Soldering, 10 sec) ................. +300
C
Package Thermal Resistance
CerDIP R
J-A
................................................ 150
C/W
CerDIP R
J-C
.................................................. 50
C/W
PDIP R
J-A
................................................... 125
C/W
PDIP R
J-C
..................................................... 42
C/W
SOIC R
J-A
................................................... 155
C/W
SOIC R
J-C
..................................................... 45
C/W
Operating Temperature Range
C Version ............................................... 0
C to +70
C
E Version .......................................... 40
C to +85
C
Power Dissipation (T
A
70
C)
Plastic ............................................................. 730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V
V
DD
16V, unless other-
wise specified. Typical values are measured at T
A
= 25
C; V
DD
=16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 High Input Voltage
2.0
--
--
V
V
IL
Logic 0 Low Input Voltage
--
--
0.8
V
I
IN
Input Current
5V
V
IN
V
DD
T
A
= 25
C
1
--
1
A
40
C
T
A
85
C
10
--
10
Output
V
OH
High Output Voltage
DC Test
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
DC Test
--
--
0.025
V
R
O
Output Resistance
V
DD
= 16V, I
O
= 10 mA T
A
= 25
C
--
2.7
4
0
C
T
A
70
C
--
3.3
5
40
C
T
A
85
C
--
3.3
5
I
PK
Peak Output Current
V
DD
= 16V
--
3.0
--
A
I
REV
Latch-Up Protection
Duty Cycle
2%
0.5
--
--
A
Withstand Reverse Current
t
300
sec
Switching Time (Note 1)
t
R
Rise Time
Figure 1
T
A
= 25
C
--
20
28
nsec
0
C
T
A
70
C
--
22
33
40
C
T
A
85
C
--
24
33
t
F
Fall Time
Figure 1
T
A
= 25
C
--
20
28
nsec
0
C
T
A
70
C
--
22
33
40
C
T
A
85
C
--
24
33
t
D1
Delay Time
Figure 1
T
A
= 25
C
--
35
45
nsec
0
C
T
A
70
C
--
40
50
40
C
T
A
85
C
--
40
50
t
D2
Delay Time
Figure 1
T
A
= 25
C
--
35
45
nsec
0
C
T
A
70
C
--
40
50
40
C
T
A
85
C
--
40
50
Power Supply
I
S
Power Supply Current
V
IN
= 3V
--
0.5
1.0
mA
V
IN
= 0V
--
0.1
0.15
NOTE: 1. Switching times are guaranteed by design.
V
DD
= 16V
V
DD
= 16V
3A HIGH-SPEED MOSFET DRIVERS
TC1413
TC1413N
4-203
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
+5V
INPUT
10%
90%
10%
90%
10%
90%
VDD
OUTPUT
tD1
0V
90%
10%
10%
10%
t
F
90%
+5V
INPUT
VDD
OUTPUT
0V
90%
OUTPUT
INPUT
0.1F
CL = 1800pF
4.7F
VDD= 16V
Inverting Driver
TC1413
4,5
1,8
6,7
Noninverting Driver
TC1413N
tF
tD2
tR
tR
tD1
tD2
INPUT: 100kHz, square wave,
tRISE = tFALL
10nsec
2
0V
0V
TC1413
TC1413N
Figure 1. Switching Time Test Circuit
200
0
400
600
800
1000
1200
1400
1600
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMPERATURE (
C)
MAX. POWER (mV)
8 Pin DIP
Thermal Derating Curves
8 Pin CerDIP
8 Pin SOIC
3A HIGH SPEED MOSFET DRIVERS
TC1413
TC1413N
4-204
TELCOM SEMICONDUCTOR, INC.
3A HIGH-SPEED MOSFET DRIVERS
TC1413
TC1413N
1
2
3
4
5
6
7
8
9
0
100
200
300
400
500
16
14
12
10
8
6
4
V
DD
(VOLTS)
Quiescent Supply Current
vs. Supply Voltage
T
A
= 25
C
I
SUPPLY
(
A)
-40
-20
0
20
40
60
80
0
100
200
300
400
500
TEMPERATURE (
C)
Quiescent Supply Current
vs. Temperature
V
SUPPLY
= 16V
I
SUPPLY
(
A)
V
IN
= 3V
V
IN
= 0V
V
IN
= 0V
V
IN
= 3V
1.1
1.2
1.3
1.4
1.5
1.6
16
14
12
10
8
6
4
V
DD
(VOLTS)
Input Threshold
vs. Supply Voltage
T
A
= 25
C
V
THRESHOLD
(VOLTS)
-40
-20
0
20
40
60
80
1.1
1.2
1.3
1.4
1.5
1.6
TEMPERATURE (
C)
Input Threshold
vs. Temperature
V
SUPPLY
= 16V
V
THRESHOLD
(VOLTS)
V
IH
V
IL
V
IL
V
IH
1
2
3
4
5
6
7
8
9
16
14
12
10
8
6
4
V
DD
(VOLTS)
High-State Output Resistance
R
ds
(ON) W
Low-State Output Resistance
R
ds
(ON) W
T
A
= 40
C
T
A
= 85
C
T
A
= 25
C
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
A
= 40
C
T
A
= 85
C
T
A
= 25
C
TYPICAL CHARACTERISTICS
4-205
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
3A HIGH SPEED MOSFET DRIVERS
TC1413
TC1413N
10
20
30
40
50
60
70
16
14
12
10
8
6
4
V
DD
(VOLTS)
Rise Time vs. Supply Voltage
C
LOAD
= 1800pF
T
RISE
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
10
20
30
40
50
60
70
16
14
12
10
8
6
4
V
DD
(VOLTS)
Fall Time vs. Supply Voltage
C
LOAD
= 1800pF
T
FALL
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
20
30
40
50
60
70
80
90
100
110
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
D1
Propagation Delay vs. Supply Voltage
C
LOAD
= 1800pF
T
D1
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
20
30
40
50
60
70
80
90
100
16
14
12
10
8
6
4
V
DD
(VOLTS)
T
D2
Propagation Delay vs. Supply Voltage
C
LOAD
= 1800pF
T
D2
(nsec)
T
A
= 40
C
T
A
= 25
C
T
A
= 85
C
0
1000
2000
3000
4000
5000
0
10
20
30
40
C
LOAD
(pF)
Rise and Fall Times vs. Capacitive Load
T
A
= 25
C, V
DD
= 16V
T
RISE
, T
FALL
(nsec)
T
FALL
T
RISE
0
1000
2000
3000
4000
5000
28
29
30
31
32
33
34
35
C
LOAD
(pF)
Propagation Delays vs. Capacitive Load
T
A
= 25
C, V
DD
= 16V
PROPAGATION DELAYS (nsec)
T
D2
T
D1
TYPICAL CHARACTERISTICS (Cont.)