Document Outline
- Return to Contents
- List of Figures
- 1. Switching Time Test Circuit
- Features
- Applications
- Pin Configurations
- Functional Block Diagram
- General Description
- Ordering Information
- Absolute Maximum Ratings*
- Electrical Characteristics: T A = 25C with 4.5V V DD 18V unless otherwise specified.
- Typical Characteristics
4-231
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
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2
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PIN CONFIGURATIONS
INPUT
GND
GND
OUTPUT
V
DD
Tab is
Common
to V
DD
NOTE:
1
2
3
4
5
6
7
8
OUTPUT
GND
TC4421
TC4422
TC4421
TC4422
V
DD
INPUT
NC
GND
V
DD
OUTPUT
Duplicate pins must both be connected
for proper operation.
NC = No connection
both
OUTPUT
INPUT
GND
EFFECTIVE
INPUT C
25 pF
V
300 mV
DD
TC4421/TC4422
Inverting/Noninverting
4.7V
INVERTING
NONINVERTING
FEATURES
s
Tough CMOS
TM
Construction
s
High Peak Output Current .................................. 9A
s
High Continuous Output Current ............... 2A Max
s
Fast Rise and Fall Times:
-- 30 nsec with 4,700 pF Load
-- 180 nsec with 47,000 pF Load
s
Short Internal Delays ............................ 30nsec Typ
s
Low Output Impedance ............................ 1.4W Typ
GENERAL DESCRIPTION
The TC4421/4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset
except direct overvoltage or over-dissipation -- they can-
not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi-
tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.
TC4421/2-7 -1018/96
TC4421
TC4422
ORDERING INFORMATION
Part No.
Package
Temperature Range
TC4421CAT
5-Pin TO-220
0
C to +70
C
TC4421CPA
8-Pin PDIP
0
C to +70
C
TC4421EPA
8-Pin PDIP
40
C to +85
C
TC4421MJA
8-Pin CerDIP
55
C to+125
C
TC4422CAT
5-Pin TO-220
0
C to +70
C
TC4422CPA
8-Pin PDIP
0
C to +70
C
TC4422EPA
8-Pin PDIP
40
C to +85
C
TC4422MJA
8-Pin CerDIP
55
C to+125
C
FUNCTIONAL BLOCK DIAGRAM
9A HIGH-SPEED MOSFET DRIVERS
APPLICATIONS
s
Line Drivers for Extra-Heavily-Loaded Lines
s
Pulse Generators
s
Driving the Largest MOSFETs and IGBTs
s
Local Power ON/OFF Switch
s
Motor and Solenoid Driver
5-Pin TO-220
8-Pin Plastic DIP/CerDIP
4-232
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS:
T
A
= 25
C with 4.5V
V
DD
18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 Input Voltage
2.4
1.8
--
V
V
IL
Logic 0 Input Voltage
--
1.3
0.8
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
Output
V
OH
High Output Voltage
See Figure 1
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
See Figure 1
--
--
0.025
V
R
O
Output Resistance, High
V
DD
= 18V, I
O
= 10 mA
--
1.4
--
R
O
Output Resistance, Low
V
DD
= 18V, I
O
= 10 mA
--
0.9
1.7
I
PK
Peak Output Current
V
DD
= 18V
--
9
--
A
I
DC
Continuous Output Current
10V
V
DD
18V, T
C
= 25
2
A
(TC4421/22 CAT only)
I
REV
Latch-Up Protection
Duty Cycle
2%
>1500
--
--
mA
Withstand Reverse Current
t
300
sec
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 10,000 pF
--
60
75
nsec
t
F
Fall Time
Figure 1, C
L
= 10,000 pF
--
60
75
nsec
t
D1
Delay Time
Figure 1
--
30
60
nsec
t
D2
Delay Time
Figure 1
--
33
60
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
--
0.2
1.5
mA
V
IN
= 0V
--
55
150
A
V
DD
Operating Input Voltage
4.5
--
18
V
Input
V
IH
Logic 1 Input Voltage
2.4
--
--
V
V
IL
Logic 0 Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, T
A
70
C
PDIP .................................................................. 730W
CerDIP ............................................................ 800mW
5-Pin TO-220 ...................................................... 1.6W
Power Dissipation, T
A
70
C
5-Pin TO-220 (With Heat Sink) ......................... 1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/
C
CerDIP ....................................................... 6.4mW/
C
5-Pin TO-220 .............................................. 12mW/
C
Thermal Impedance (To Case)
5-Pin TO-220 R
QJ-C .....................................................
10
C/W
Storage Temperature ............................ 65
C to +150
C
Operating Temperature (Chip) ................................ 150
C
Operating Temperature (Ambient)
C Version ............................................... 0
C to +70
C
E Version .......................................... 40
C to +85
C
M Version ....................................... 55
C to +125
C
Lead Temperature (10 sec) ..................................... 300
C
Supply Voltage ............................................................20V
Input Voltage .......................... (V
DD
+ 0.3V) to (GND - 5V)
Input Current (V
IN
> V
DD
) ........................................ 50 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
4-233
TELCOM SEMICONDUCTOR, INC.
7
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9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V
V
S
18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 Input Voltage
2.4
--
--
V
V
IL
Logic 0 Input Voltage
--
--
0.8
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
Output
V
OH
High Output Voltage
See Figure 1
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
See Figure 1
--
--
0.025
V
R
O
Output Resistance, High
V
DD
= 18V, I
O
= 10 mA
--
2.4
3.6
W
R
O
Output Resistance, Low
V
DD
= 18V, I
O
= 10 mA
--
1.8
2.7
W
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 10,000 pF
--
60
120
nsec
t
F
Fall Time
Figure 1, C
L
= 10,000 pF
--
60
120
nsec
t
D1
Delay Time
Figure 1
--
50
80
nsec
t
D2
Delay Time
Figure 1
--
65
80
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
--
0.45
3
mA
V
IN
= 0V
--
0.06
0.2
V
DD
Operating Input Voltage
4.5
--
18
V
Figure 1. Switching Time Test Circuit
INPUT
C = 10,000 pF
L
OUTPUT
TC4421
0.1
F
0.1
F
2
6
7
5
4
1
8
V = 18V
DD
t
R
INPUT
90%
10%
+18V
OUTPUT
t
D1
0V
+5V
t
F
90%
t
D2
10%
0.1
F
10%
90%
0V
INPUT: 100 kHz, square wave,
t
RISE
=
t
FALL
10nsec
NOTE: 1. Switching times guaranteed by design.
4-234
TELCOM SEMICONDUCTOR, INC.
TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS
220
200
180
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
Rise Time vs. Supply Voltage
V
DD
1000 pF
4700 pF
10,000 pF
22,000 pF
5V
15V
300
250
200
150
100
50
0
Rise TIme vs. Capacitive Load
100
1000
10,000
100,000
10V
90
Rise and Fall Times vs. Temperature
60
40
30
t RISE
t FALL
70
50
80
40
0
40
80
120
(C)
50
8
10
12
14
16
18
4
TIME (nsec)
VDD
Propagation Delay vs. Supply Voltage
45
40
35
30
25
tD2
tD1
6
C = 1000 pF
LOAD
180
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
Fall Time vs. Supply Voltage
V
DD
1000 pF
4700 pF
10,000 pF
22,000 pF
300
250
200
150
100
50
0
Fall TIme vs. Capacitive Load
100
1000
10,000
5V
10V
15V
t RISE
(nsec)
t RISE
(nsec)
t FALL
(nsec)
t FALL
(nsec)
CLOAD (pF)
CLOAD (pF)
= 10,000 pF
LOAD
V = 15V
DD
C
TIME (nsec)
TA
100,000
4-235
TELCOM SEMICONDUCTOR, INC.
7
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TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
C (pF)
220
Supply Current vs. Capacitive Load
LOAD
100
200
180
160
140
120
100
80
60
40
20
0
100,000
10,000
1000
1.125 MHz
632 kHz
200 kHz
20 kHz
2 MHz
I (mA) SUPPLY
63.2 kHz
(V
= 18V)
DD
FREQUENCY (kHz)
180
100
80
60
40
20
0
Supply Current vs. Frequency
120
140
160
0.1 F
22,000 pF
470 pF
10,000 pF
4700 pF
I (mA) SUPPLY
180
160
140
120
100
60
0
C (pF)
LOAD
80
40
20
I (mA) SUPPLY
1.125 MHz
63.2 kHz
20 kHz
632 kHz
200 kHz
2 MHz
Supply Current vs. Capacitive Load,
(V
= 12)
DD
100
Supply Current vs. Capacitive Load
90
80
70
60
50
40
30
20
10
0
C (pF)
LOAD
20 kHz
632 kHz
200 kHz
2 MHz
63.2 kHz
I (mA) SUPPLY
(V
= 6V)
DD
47,000 pF
120
40
20
0
100
0.1 F
4700 pF
10
FREQUENCY (kHz)
100
1000
60
80
22,000 pF
470 pF
10,000 pF
I (mA) SUPPLY
FREQUENCY (kHz)
I (mA)
180
SUPPLY
100
80
60
40
20
0
Supply Current vs. Frequency
120
140
160
0.1 F
470 pF
22,000 pF
10
100
1000
4700 pF
10,000 pF
47,000 pF
(V
= 18V)
DD
(V
= 12)
DD
Supply Current vs. Frequency
(V
= 6V)
DD
100
100,000
10,000
1000
100
100,000
10,000
1000
10
100
1000
10
100
1000
47,000 pF
4-236
TELCOM SEMICONDUCTOR, INC.
TYPICAL CHARACTERISTICS (Cont.)
120
TIME (nsec)
110
100
90
80
70
60
50
40
30
20
10
0
1
2
3
4
5
6
7
8
9
10
Propagation Delay vs. Input Amplitude
VDD = 10V
CLOAD = 10000V
tD2
tD1
INPUT (V)
50
40 20
0
20
40
60
80
100 120
60
TIME (nsec)
Propagation Delay vs. Temperature
45
40
35
30
25
20
tD2
tD1
10
3
10
2
40 20
0
20
40
60
80 100 120
60
I (A) QUIESCENT
T (C)
J
Quiescent Supply Current vs. Temperature
V = 18V
DD
6
4
6
8
10
12
14
16
18
High-State Output Resistance
vs. Supply Voltage
R ( )
DS(ON)
V (V)
DD
TJ = 150 C
TJ = 25 C
DD
4
6
8
10
12
14
16
18
V (V)
Low-State Output Resistance
vs. Supply Voltage
TJ = 150C
TJ = 25C
Crossover Energy vs. Supply Voltage
10
Asec
10
6
7
DD
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
10
8
4
6
8
10
12
14
16
18
V
INPUT = 1
INPUT = 0
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
R ( )
DS(ON)
T (C)
A
TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
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