Document Outline
- Return to Contents
- List of Figures
- 1. Switching Time Test Circuit
- Features
- Applications
- Functional Block Diagram
- Pin Configuration
- General Description
- Ordering Information
- Absolute Maximum Ratings*
- Electrical Characteristics: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
- Electrical Characteristics: Measured over operating temperature range with 4.5V VDD 18V,
- Typical Characteristics
4-225
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
TC4420
TC4429
6A HIGH-SPEED MOSFET DRIVERS
ORDERING INFORMATION
Temp.
Part No.
Logic
Package
Range
TC4420CAT
Noninverting
5-Pin TO-220
0
C to +70
C
TC4420COA
Noninverting
8-Pin SOIC
0
C to +70
C
TC4420CPA
Noninverting
8-Pin PDIP
0
C to +70
C
TC4420EOA
Noninverting
8-Pin SOIC
40
C to +85
C
TC4420EPA
Noninverting
8-Pin PDIP
40
C to +85
C
TC4420IJA
Noninverting
8-Pin CerDIP
25
C to +85
C
TC4420MJA
Noninverting
8-Pin CerDIP 55
C to +125
C
TC4429CAT
Inverting
5-Pin TO-220
0
C to +70
C
TC4429COA
Inverting
8-Pin SOIC
0
C to +70
C
TC4429CPA
Inverting
8-Pin PDIP
0
C to +70
C
TC4429EOA
Inverting
8-Pin SOIC
40
C to +85
C
TC4429EPA
Inverting
8-Pin PDIP
40
C to +85
C
TC4429IJA
Inverting
8-Pin CerDIP
25
C to +85
C
TC4429MJA
Inverting
8-Pin CerDIP 55
C to +125
C
FEATURES
s
Latch-Up Protected ............. Will Withstand > 1.5A
Reverse Output Current
s
Logic Input Will Withstand Negative Swing Up
to 5V
s
ESD Protected ..................................................... 4kV
s
Matched Rise and Fall Times ...................... 25nsec
s
High Peak Output Current ......................... 6A Peak
s
Wide Operating Range .......................... 4.5V to 18V
s
High Capacitive Load Drive ..................... 10,000 pF
s
Short Delay Time .................................. 55nsec Typ
s
Logic High Input, Any Voltage ............. 2.4V to V
DD
s
Low Supply Current With Logic "1" Input ... 450
A
s
Low Output Impedance .................................... 2.5
s
Output Voltage Swing to Within 25mV of Ground
or V
DD
APPLICATIONS
s
Switch-Mode Power Supplies
s
Motor Controls
s
Pulse Transformer Driver
s
Class D Switching Amplifiers
Tab is
Connected
to VDD
8-Pin DIP
TO-220-5
TC4420
TC4429
8-Pin SOIC
NOTE: Duplicate pins must
both be connected for proper operation.
INPUT
GND
V
DD
GND
OUTPUT
1
8
2
7
3
6
4
5
GND
GND
NC
INPUT
VDD
OUTPUT
OUTPUT
VDD
1
8
2
7
3
6
4
5
GND
GND
NC
INPUT
VDD
OUTPUT
OUTPUT
VDD
TC4420
TC4429
TC4420
TC4429
500 A
OUTPUT
INPUT
GND
EFFECTIVE
INPUT
C = 38 pF
VDD
300 mV
TC4429
TC4420
4.7V
TC4420/9-6 10/18/96
GENERAL DESCRIPTION
The TC4420/4429 are 6A (peak), single output MOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
These drivers are fabricated in CMOS for lower power, more
efficient operation versus bipolar drivers.
Both devices have TTL-compatible inputs, which can be
driven as high as V
DD
+ 0.3V or as low as 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.
Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo-
nents saving PCB area, parts and improving overall system
reliability.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
4-226
TELCOM SEMICONDUCTOR, INC.
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
T
A
= +25
C with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 High Input Voltage
2.4
1.8
--
V
V
IL
Logic 0 Low Input Voltage
--
1.3
0.8
V
V
IN
(Max)
Input Voltage Range
5
--
V
DD
+0.3
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
Output
V
OH
High Output Voltage
See Figure 1
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
See Figure 1
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 18V
--
2.1
2.8
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 18V
--
1.5
2.5
I
PK
Peak Output Current
V
DD
= 18V (See Figure 5)
--
6
--
A
I
REV
Latch-Up Protection
Duty Cycle
2%
1.5
--
--
A
Withstand Reverse Current
t
300
s
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 2500 pF
--
25
35
nsec
t
F
Fall Time
Figure 1, C
L
= 2500 pF
--
25
35
nsec
t
D1
Delay Time
Figure 1
--
55
75
nsec
t
D2
Delay Time
Figure 1
--
55
75
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
--
0.45
1.5
mA
V
IN
= 0V
--
55
150
A
V
DD
Operating Input Voltage
4.5
--
18
V
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... 5V to > V
DD
Input Current (V
IN
> V
DD
) ......................................... 50mA
Power Dissipation, T
A
70
C
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................ 800mW
5-Pin TO-220 ...................................................... 1.6W
Package Power Dissipation (T
A
70
C)
5-Pin TO-220 (With Heat Sink) ......................... 1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/
C
SOIC ............................................................. 4mW/
C
CerDIP ....................................................... 6.4mW/
C
5-Pin TO-220 .............................................. 12mW/
C
Thermal Impedances (To Case)
5-Pin TO-220 R
J-C
........................................ 10
C/W
Storage Temperature Range ................ 65
C to +150
C
Operating Temperature (Chip) .............................. +150
C
Operating Temperature Range (Ambient)
C Version ............................................... 0
C to +70
C
I Version ........................................... 25
C to +85
C
E Version .......................................... 40
C to +85
C
M Version ....................................... 55
C to +125
C
Lead Temperature (Soldering, 10 sec) ................. +300
C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
4-227
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
Measured over operating temperature range with 4.5V
V
DD
18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
Logic 1 High Input Voltage
2.4
--
--
V
V
IL
Logic 0 Low Input Voltage
--
--
0.8
V
V
IN
(Max)
Input Voltage Range
5
--
V
DD
+ 0.3
V
I
IN
Input Current
0V
V
IN
V
DD
10
--
10
A
Output
V
OH
High Output Voltage
See Figure 1
V
DD
0.025
--
--
V
V
OL
Low Output Voltage
See Figure 1
--
--
0.025
V
R
O
Output Resistance, High
I
OUT
= 10 mA, V
DD
= 18V
--
3
5
R
O
Output Resistance, Low
I
OUT
= 10 mA, V
DD
= 18V
--
2.3
5
Switching Time (Note 1)
t
R
Rise Time
Figure 1, C
L
= 2500 pF
--
32
60
nsec
t
F
Fall Time
Figure 1, C
L
= 2500 pF
--
34
60
nsec
t
D1
Delay Time
Figure 1
--
50
100
nsec
t
D2
Delay Time
Figure 1
--
65
100
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V
--
0.45
3
mA
V
IN
= 0V
--
60
400
A
V
DD
Operating Input Voltage
4.5
--
18
V
NOTE: 1. Switching times guaranteed by design.
Figure 1. Switching Time Test Circuit
INPUT: 100 kHz, square wave,
t
RISE
=
t
FALL
10 nsec
INPUT
CL = 2500pF
OUTPUT
0.1
F
0.1
F
2
6
7
5
4
1
8
VDD = 18V
INPUT
90%
10%
+18V
OUTPUT
tD1
0V
0V
+5V
90%
10%
10%
90%
1
F
tF
tD2
tR
TC4429
4-228
TELCOM SEMICONDUCTOR, INC.
TC4420
TC4429
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TYPICAL CHARACTERISTICS
60
40
20
10
1000
10,000
CAPACITIVE LOAD (pF)
TIME (nsec)
V = 18V
DD
Fall Time vs. Capacitive Load
80
100
V = 12V
DD
V = 5V
DD
50
40
30
20
10
0
60
20
20
60
100
140
TA (
C)
DELAY TIME (nsec)
D1
t
D2
t
Propagation Delay Time
vs. Temperature
0
100
1000
10,000
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (mA)
Supply Current vs. Capacitive Load
C = 2200 pF
L
V = 18V
DD
84
70
56
42
28
14
0
500 kHz
200 kHz
20 kHz
V = 15V
DD
65
60
55
50
45
40
35
DELAY TIME (nsec)
4
6
8
10
12
14
16
18
SUPPLY VOLTAGE (V)
Propagation Delay Time
vs. Supply Voltage
t
D2
t
D1
V = 12V
DD
V = 5V
DD
60
40
20
10
1000
10,000
CAPACITIVE LOAD (pF)
V = 18V
DD
Rise Time vs. Capacitive Load
80
100
TIME (nsec)
100
0
0
100
1000
10,000
FREQUENCY (kHz)
SUPPLY CURRENT (mA)
Supply Current vs. Frequency
10
1000
18V
10V
5V
C = 2200 pF
L
60
20
20
60
100
140
TA (
C)
5
7
9
11
13
15
V (V)
DD
5
7
9
11
13
15
t
RISE
t
50
40
30
20
10
0
TIME (nsec)
Rise and Fall Times vs. Temperature
C = 2200 pF
V = 18V
DD
FALL
V (V)
DD
C = 2200 pF
L
120
100
80
60
40
20
0
TIME (nsec)
Rise Time vs. Supply Voltage
C = 4700 pF
L
C = 10,000 pF
L
C = 2200 pF
L
TIME (nsec)
Fall Time vs. Supply Voltage
C = 4700 pF
L
C = 10,000 pF
L
100
80
60
40
20
0
L
4-229
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
TC4420
TC4429
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
2.5
2
1.5
1
5
9
13
V (V)
DD
Low-State Output Resistance
R ( )
OUT
100 mA
50 mA
10 mA
7
11
15
200
160
120
80
40
0
DELAY TIME (nsec)
5
6
7
11
13
15
Effect of Input Amplitude
on Propagation Delay
LOAD = 2200 pF
INPUT 2.4V
INPUT 3V
INPUT 5V
INPUT 8V AND 10V
8
9
10
12
14
V (V)
DD
4
3
2
1
0
Crossover Area (AS) x 10
-9
5
6
7
11
13
15
Total nAS Crossover*
8
9
10
12
14
SUPPLY VOLTAGE (V)
5
4
3
2
5
9
13
V (V)
DD
High-State Output Resistance
R ( )
OUT
100 mA
50 mA
10 mA
7
11
15
The values on this graph represent
the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.
*
TYPICAL CHARACTERISTICS (Cont.)
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