1N4148.1N4448
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (4)
Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes:
1N4148 1N914
1N4448 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T
j
= 25
_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
100
V
Reverse voltage
V
R
75
V
Peak forward surge current
t
p
=1
ms
I
FSM
2
A
Repetitive peak forward current
I
FRM
500
mA
Forward current
I
F
300
mA
Average forward current
V
R
=0
I
FAV
150
mA
Power dissipation
l=4mm, T
L
=45
C
P
V
440
mW
p
l=4mm, T
L
x25C
P
V
500
mW
Junction temperature
T
j
200
C
Storage temperature range
T
stg
65...+200
C
Maximum Thermal Resistance
T
j
= 25
_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T
L
=constant
R
thJA
350
K/W
1N4148.1N4448
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
3 (4)
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I Forward Current ( mA
)
F
V
F
Forward Voltage ( V )
2.0
94 9171
1 N 4448
Scattering Limit
T
j
= 25
C
Figure 3. Forward Current vs. Forward Voltage
1
10
1
10
100
1000
I Reverse Current ( nA
)
R
V
R
Reverse Voltage ( V )
100
94 9098
Scattering Limit
T
j
= 25
C
Figure 4. Reverse Current vs. Reverse Voltage
Dimensions in mm
Cathode Identification
1.7 max.
0.55 max.
3.9 max.
26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
1N4148.1N4448
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
4 (4)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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