TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
1 (5)
GaAs/GaAlAs IR Emitting Diodes in 5 mm Package
Description
TSIL6400 is a high efficiency infrared emitting diode in
GaAlAs on GaAs technology, molded in clear, bluegrey
tinted plastic packages.
In comparison with the standard GaAs on GaAs technol-
ogy these emitters achieve about 70 % radiant power
improvement at a similar wavelength.
The forward voltages at low current and at high pulse cur-
rent roughly correspond to the low values of the standard
technology. Therefore these emitters are ideally suitable
as high performance replacements of standard emitters.
Features
D Extra high radiant power and radiant intensity
D Low forward voltage
D Suitable for high pulse current operation
D Standard T1 ( 5 mm) package
D Angle of half intensity
=
17
D Peak wavelength l
p
= 925 nm
D High reliability
D Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25
_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward Current
I
F
100
mA
Peak Forward Current
t
p
/T=0.5, t
p
=100
ms
I
FM
200
mA
Surge Forward Current
t
p
=100
ms
I
FSM
1.5
A
Power Dissipation
P
V
210
mW
Junction Temperature
T
j
100
C
Operating Temperature Range
T
amb
55...+100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x 5sec, 2 mm from case
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
3 (5)
t
p
Pulse Duration ( ms )
96 11987
10
0
10
1
10
1
10
1
10
1
10
0
10
2
10
2
I Forward Current (
A
)
F
t
p
/ T = 0.01
I
FSM
= 1 A ( Single Pulse )
0.05
0.1
0.5
1.0
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
Forward Voltage ( V )
4
96 11988
10
1
10
0
10
2
10
3
10
4
I Forward Current ( mA
)
F
t
p
= 100
ms
t
p
/ T = 0.001
Figure 4. Forward Current vs. Forward Voltage
0
20
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
Relative Forward
V
oltage
Frel
T
amb
Ambient Temperature (
C )
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs. Ambient Temperature
96 11989
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
Forward Current ( mA )
I Radiant Intensity ( mW/sr )
e
Figure 6. Radiant Intensity vs. Forward Current
Radiant Power ( mW
)
e
I
F
Forward Current ( mA )
96 11990
F
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
10
10
50
0
100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
T
amb
Ambient Temperature (
C )
140
94 7993 e
F
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
5 (5)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
PDF 
ZIP
