U2893B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-97
1 (14)
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2893B is a monolithic integrated circuit. It is
realized using TEMIC's advanced silicon bipolar UHF5S
technology. The device integrates a mixer, an I/Q modu-
lator, a phase-frequency detector (PFD) with two
synchronous-programmable dividers, and a charge pump.
The U2893B is designed for cellular phones such as GSM,
DCS1800, and PCS1900, applying a transmitter-archi-
tecture where the VCO is operated at the TX output
frequency.
U2893B exhibits low power consumption, and the power-
down function extends battery life.
The IC is available in a shrinked small-outline 28pin
package (SSO28).
Features
D Supply voltage down to 2.7 V
D Current consumption 40 mA
D Power-down function
D Low-current standby mode
D High-speed PFD and charge pump
D Integrated dividers
Benefits
D High-level RF integration
D TX architecture saves filter costs
D Low external part count
D Small SSO28 package
D One device for various applications
Block Diagram
Voltage
reference
PFD
+
I/Q modulator
R : 1
divider
90
grd
MIXLO
VSP
CPO
GNDP
CPC
MDO
NMDO
RD
I
NI
MDLO
NQ
PU MIXO
Q
PUMIX
N : 1
ND
NND
VS3
GND
Mixer
MUX
MC
Mode
control
RF
VS1
VS2
NRD
NRF
12494
divider
Figure 1. Block diagram
U2893B
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
2 (14)
Pin Description
1
2
3
4
5
6
7
8
10
9
27
22
21
20
18
19
17
12
11
28
25
26
23
24
NMDO
VS1
VSP
CPO
GNDP
CPC
GND
MDO
PUMIX
MDLO
NI
I
NRF
RF
VS2
MIXLO
PU
GND
MIXO
GND
NND
VS3
NQ
Q
16
15
14
13
12495
RD
NRD
ND
MC
Figure 2. Pinning
Pin
Symbol
Function
1
I
In-phase baseband input
2
NI
Complementary to I
3
MDLO
I/Q-modulator LO input
4
GND
1)
Negative supply
5
MDO
I/Q-modulator output
6
NMDO
Complementary to MDO
7
VS1
3)
Positive supply (I/Q MOD)
8
VSP
Pos. supply charge-pump
9
CPO
Charge-pump output
10
GNDP
2)
Neg. supply charge pump
11
CPC
Charge-pump current control
(input)
12
PUMIX
Power-up, mixer only
13
RD
R-divider input
14
NRD
Complementary to RD
15
MC
Mode control
16
ND
N-divider input
17
NND
Complementary to ND
18
GND
1)
Negative supply
19
PU
Power-up, whole chip except
mixer
20
MIXLO
Mixer LO input
21
VS2
3)
Positive supply (MISC.)
22
RF
Mixer RF-input
23
NRF
Complementary to RF
24
GND
1)
Negative supply
25
MIXO
Mixer output
26
VS3
3)
Positive supply (mixer)
27
NQ
Complementary to Q
28
Q
Quad.-phase baseband input
1)
All GND pins must be connected to GND
potential. No DC voltage between GND pins!
2)
Max. voltage between GNDP and GND pins
v 200 mV
3)
The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is 200 mV.
U2893B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-97
3 (14)
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage VS1, VS2, VS3
V
VS#
v V
VSP
V
Supply voltage charge pump VSP
V
VSP
5.5
V
Voltage at any input
V
Vi#
0.5
v V
VS
+0.5
v 5.5
V
Current at any input / output pin
except CPC
| I
I#
| | I
O#
|
2
mA
CPC output currents
| I
CPC
|
5
mA
Ambient temperature
T
amb
20 to +85
C
Storage temperature
T
stg
40 to +125
C
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage
V
VS#
, V
VSP
2.7 to 5.5
V
Ambient temperature
T
amb
20 to +85
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient SSO28
R
thJA
130
K/W
Electrical Characteristics: General Data
T
amb
= 25
C, V
S
= 2.7 to 5.5 V
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
DC supply
Supply voltages VS#
V
VS1
= V
VS2
= V
VS3
V
VS#
2.7
5.5
V
Supply voltage VSP
V
VSP
V
VS#
0.3
5.5
V
Supply current I
VS1
Active (V
PU
= VS)
I
VS1A
16
mA
pp y
VS1
Standby (V
PU
= 0)
I
VS1Y
20
mA
Supply current I
VS2
Active (V
PU
= VS)
I
VS2A
21
mA
pp y
VS2
Standby (V
PU
= 0)
I
VS2Y
20
mA
Supply current I
VS3
Active (V
PUMIX
= VS)
I
VS3A
11
mA
pp y
VS3
Standby (V
PUMIX
= 0)
I
VS3Y
30
mA
Supply current I
VSP
1)
Active
(V
PU
= VS, CPO open)
I
VSPA
2)
20
mA
Standby (V
PU
= 0)
I
VSPY
20
mA
N & R divider inputs ND, NND & RD, NRD
N:1 divider frequency
50-
W source
F
ND
100
650
MHz
R:1 divider frequency
50-
W source
F
RD
100
400
MHz
Input impedance
Active & standby
Z
RD
, Z
ND
1 k
2 pF
Input sensitivity
50-
W source
V
RDeff
, V
NDeff
30
200
mV
1)
100-MHz PFD operation, pump current set to 4 mA, zero phase difference (steady state)
2)
See chapter "Supply Current of the Charge Pump i(VSP) vs. Time", page 6.
U2893B
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-76
Preliminary Information
4 (14)
Electrical Characteristics: General Data (continued)
T
amb
= 25
C, V
S
= 2.7 to 5.5 V
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Phase-frequency detector (PFD)
PFD operation
F
ND
= 650 MHz, n = 5
F
RD
= 300 MHz, r = 2
FM
PFD
150
MHz
Frequency comparison
only
F
ND
= 650 MHz, n = 5
F
RD
= 300 MHz, r = 2
FM
FD
200
MHz
I/Q modulator baseband inputs I, NI & Q, NQ
DC voltage
Referred to GND
V
I,
V
NI,
V
Q,
V
NQ
1.35
VS1/2
VS1/2
+ 0.1
V
MD_IQ
Frequency range
FR
IO
DC
1
MHz
AC voltage
3)
Referred to GND
AC
I,
AC
NI,
AC
Q,
AC
NQ
200
mVpp
Differential (preferres)
AC
DI,
AC
DQ
400
mVpp
I/Q modulator LO input MDLO
MDLO
Frequency range
F
MDLO
50
350
MHz
Input impedance
Active & standby
Z
MDLO
250
W
Input level
50-
W source
P
MDLO
12
5
dBm
I/Q modulator outputs MDO, NMDO
DC current
V
MDO
, V
NMDO
= VS
I
MDO
, I
NMDO
2.4
mA
Voltage compliance
V
MDO
, V
NMDO
= VC
VC
MDO
, VC
NMDO
MDO output level
(differential)
500
W to VS
4)
P
MDOeff
120
150
mV
Carrier suppression
4)
CS
MDO
30
35
dBc
Sideband suppression
4)
SS
MDO
35
40
dBc
IF spurious
4)
f_LO +/ 3
f_mod
SP
MDO
45
50
dBc
Noise
4)
@ 400 kHz off carrier
N
MDO
115
dBc/Hz
Frequency range
FR
MDO
50
350
MHz
Mixer (900 MHz)
RF input level
900 MHz
P9
RF
tbd
15
dBm
LO-spurious at
RF/NRF port
@ P9
MIXLO
= 10 dBm
@ P9
RF
= 15 dBm
SP9
RF
40
dBm
MIXLO input level
0.05 to 2 GHz
P9
MIXLO
tbd
10
dBm
MIXO (100-
W load)
Frequency range
FR
MIXO
50
350
MHz
... Output level
5)
@ P9
MIXLO
= 15 dBm
P9
MIXOeff
70
mV
... Carrier suppression
@ P9
MIXLO
= 15 dBm
CS9
MIXO
20
dBc
3)
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity degrading
suppression of odd harmonics
4)
With typical drive levels at MDLO- & I/Q-inputs
5)
1 dB compression point (CP-1)
U2893B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-97
5 (14)
Electrical Characteristics: General Data (continued)
T
amb
= 25
C, V
S
= 2.7 to 5.5 V
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Mixer (1900 MHz)
RF input level
0.5 to 2 GHz
P19
RF
17
dBm
LO-spurious at
RF/NRF ports
@ P19
MIXLO
= 10 dBm
@ P19
RF
= 15 dBm
SP19
RF
40
dBm
MIXLO input level
0.05 to 2 GHz
P19
MIXLO
8
dBm
MIXO (100
W load)
... Output level
5)
@ P19
MIXLO
= 17 dBm
P19
MIXO
55
mVeff
... Carrier suppression
@ P19
MIXLO
= 17 dBm
CS19
MIXO
20
dBc
Charge pump output CPO
Pump current pulse
CPC open
| I
CPO
|
0.8
1
1.2
mA
p
p
2.23 k
CPC to GND
| I
CPO 2
|
1.6
2
2.4
mA
760
CPC to GND
| I
CPO_4
|
3.6
4
4.4
mA
TK pump current
Tk_| I
CPC
|
15
%/100 k
Mismatch source / sink
current
(I
CPOSI
I
CPOSO
)/I
CPOSI
I
CPOSO
= I
sourc
I
CPOSI
= I
sink
M
ICPO
10
%
Sensivity to VSP
|
DI
CPO
I
CPO
|
| D
VSP
VSP
|
S
ICPO
0.1
Charge pump control input CPC
Compensation capacitor
C
CPC
500
pF
Short circuit current
6)
CPC grounded
| I
CPCK
|
2
2.7
3.7
mA
Mode control
Sink current
V
MC
= VS
I
MC
20
mA
Power-up input PU (power-up for all functions, except mixer)
Settling time
Output power within
10% of steady state
values
S
PU
5
10
ms
High level
Active
V
PUH
2.5
V
Low level
Standby
V
PUL
0
0.4
V
High-level current
Active, V
PUH
= 2.7 V
I
PUH
0.1
0.6
mA
Low-level current
Standby, V
PUL
= 0.4 V
I
PUL
10
0
mA
Power-up input PUMIX (power-up for mixer only)
Settling time
Output power within
10% of steady state
values
5
10
ms
High level
Active
V
PUMIXH
2.5
V
Low level
Standby
V
PUMIXL
0
0.4
V
High-level current
Active, V
PUMIXH
= 2.7 V
I
PUMIXH
0.1
0.6
mA
Low-level current
Standby,
V
PUMIXL
= 0.4 V
I
PUMIXL
10
0
mA
6)
See figures 6 and 14.
PDF 
ZIP