U2895B
Rev. A3, 30-Sep-98
1 (16)
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2895B is a monolithic integrated circuit. It is
realized using TEMIC's advanced silicon bipolar UHF5S
technology. The device integrates a mixer, an I/Q modu-
lator, a phase-frequency detector (PFD) with two
synchronous programmable dividers, and a charge pump.
The U2895B is designed for cellular phones such as
GSM900, DCS1800, and PCS1900, applying a trans-
mitter architecture at which the VCO operates at the TX
output frequency. No duplexer is needed since the out-of-
band noise is very low. The U2895B exhibits low power
consumption. Broadband operation gives high flexibility
for multi-band frequency mappings. The IC is available
in a shrinked small-outline 28-pin package (SSO28).
Electrostatic sensitive device.
Observe precautions for handling.
Features
D Supply voltage range 2.7 V to 5.5 V
D Current consumption 50 mA
D Power-down functions
D High-speed PFD and charge pump (CP)
D Small CP saturation voltages (0.5/0.6 V)
D Programmable dividers and CP polarity
D Low-current standby mode
Benefits
D Novel TX architecture saves filter costs
D Extended battery operating time without duplexer
D Less board space (few external components)
D VCO control without voltage doubler
D Small SSO28 package
D One device for all GSM bands
Block Diagram
divider
N
1
R
1
divider
Mode
control
16
17
13
14
15
MUX
90
Voltage
reference
I/Q modulator
5
6
I NI
MDLO Q NQ PUMIX PU MIXO MIXLO
25
20
19
12
27
28
3
2
1
Mixer
PFD
Charge
pump
10
11
24
18
4
22
23
8
9
7
21
26
RF
NRF
VSP
CPO
VS1
VS2
VS3
MDO
NMDO
ND
NND
RD
NRD
MC
GND
CPC
GNDP
15048
+
2
Figure 1. Block diagram
U2895B
Rev. A3, 30-Sep-98
2 (16)
Ordering Information
Extended Type Number
Package
Remarks
U2895B-AFSG3
SSO28
Taped and reeled
Pin Description
1
2
3
4
5
6
7
8
10
9
27
22
21
20
18
19
17
12
11
28
25
26
23
24
NMDO
VS1
VSP
CPO
GNDP
CPC
GND
MDO
PUMIX
MDLO
NI
I
NRF
RF
VS2
MIXLO
PU
GND
MIXO
GND
NND
VS3
NQ
Q
16
15
14
13
12495
RD
NRD
ND
MC
Figure 2. Pinning
Pin
Symbol
Function
1
I
In-phase baseband input
2
NI
Complementary to I
3
MDLO
I/Q-modulator LO input
4
GND
1)
Negative supply
5
MDO
I/Q-modulator output
6
NMDO
Complementary to MDO
7
VS1
3)
Positive supply (I/Q MOD)
8
VSP
Pos. supply charge-pump
9
CPO
Charge-pump output
10
GNDP
2)
Neg. supply charge pump
11
CPC
Charge-pump current control
(input)
12
PUMIX
Power-up, mixer only
13
RD
R-divider input
14
NRD
Complementary to RD
15
MC
Mode control
16
ND
N-divider input
17
NND
Complementary to ND
18
GND
1)
Negative supply
19
PU
Power-up, whole chip except
mixer
20
MIXLO
Mixer LO input
21
VS2
3)
Positive supply (MISC.)
22
RF
Mixer RF-input
23
NRF
Complementary to RF
24
GND
1)
Negative supply
25
MIXO
Mixer output
26
VS3
3)
Positive supply (mixer)
27
NQ
Complementary to Q
28
Q
Quad.-phase baseband input
1)
All GND pins must be connected to GND
potential. No DC voltage between GND pins!
2)
Max. voltage between GNDP and GND pins
v 200 mV
3)
The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is
v200 mV.
U2895B
Rev. A3, 30-Sep-98
3 (16)
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage VS1, VS2, VS3
V
VS#
v V
VSP
V
Supply voltage charge pump VSP
V
VSP
5.5
V
Voltage at any input
V
Vi#
0.5
v V
VS
+0.5
v 5.5
V
Current at any input / output pin
except CPC
| I
I#
| | I
O#
|
2
mA
CPC output currents
| I
CPC
|
5
mA
Ambient temperature
T
amb
20 to +85
C
Storage temperature
T
stg
40 to +125
C
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage
V
VS#
, V
VSP
2.7 to 5.5
V
Ambient temperature
T
amb
20 to +85
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient SSO28
R
thJA
130
K/W
Electrical Characteristics
V
S
= 2.7 to 5.5 V, T
amb
= 20
C to +85
C, final test at 25
C
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
DC supply
Supply voltages VS#
V
VS1
= V
VS2
= V
VS3
V
VS#
2.7
5.5
V
Supply voltage VSP
V
VSP
V
VS#
0.3
5.5
V
Supply current I
VS1
Active (V
PU
= VS)
I
VS1A
17
22
mA
pp y
Standby (V
PU
= 0)
I
VS1Y
20
mA
Supply current I
VS2
Active (V
PU
= VS)
I
VS2A
17
22
mA
pp y
Standby (V
PU
= 0)
I
VS2Y
20
mA
Supply current I
VS3
Active (V
PUMIX
= VS)
I
VS3A
13
17
mA
pp y
Standby (V
PUMIX
= 0)
I
VS3Y
30
mA
Supply current I
VSP
1)
Active
(V
PU
= VS, CPC open)
I
VSPA
1.4
1.8
mA
Standby (V
PU
= 0)
I
VSPY
20
mA
N & R divider inputs ND, NND & RD, NRD
N:1 divider frequency
50-
W source
f
ND
100
600
MHz
R:1 divider frequency
50-
W source
f
RD
100
600
MHz
Input impedance
Active & standby
Z
RD
, Z
ND
1 k
2 pF
Input sensitivity
50-
W source
V
RD
, V
ND
20
200
mV
rms
1)
Mean value, measured with F
ND
= 151 MHz, F
RD
= 150 MHz, current vs. time, see page 6, figure 3.
U2895B
Rev. A3, 30-Sep-98
4 (16)
Electrical Characteristics (continued)
V
S
= 2.7 to 5.5 V, T
amb
= 20
C to +85
C, final test at 25
C
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Phase-frequency detector (PFD)
PFD operation
f
ND
= 450 MHz, N = 2
f
RD
= 450 MHz, R = 2
f
PFD
50
225
MHz
Frequency comparison
only
3)
f
ND
= 600 MHz, N = 2
f
RD
= 450 MHz, R = 2
f
FD
300
MHz
I/Q modulator baseband inputs I, NI & Q, NQ
DC voltage
Referred to GND
V
I,
V
NI,
V
Q,
V
NQ
1.35
VS1/2
VS1/2
+ 0.1
V
MD_IQ
Frequency range
f
IO
DC
1
MHz
AC voltage
4)
Referred to GND
AC
I,
AC
NI,
AC
Q,
AC
NQ
200
mV
pp
Differential (preferres)
AC
DI,
AC
DQ
400
mV
pp
I/Q modulator LO input MDLO
MDLO
Frequency range
f
MDLO
100
850
MHz
Input impedance
Active & standby
Z
MDLO
250
W
Input level
50-
W source
P
MDLO
20
15
10
dBm
I/Q modulator outputs MDO, NMDO
DC current
V
MDO
, V
NMDO
= VS
I
MDO
, I
NMDO
2.4
mA
Voltage compliance
V
MDO
, V
NMDO
= VC
VC
MDO
, VC
NMDO
V
S
0.7
5.5
V
MDO output level
(differential)
500
W to VS
5)
P
MDO
120
150
mV
rms
Carrier suppression
5)
CS
MDO
32
35
dBc
Sideband suppression
5)
SS
MDO
35
40
dBc
IF spurious
5)
f
LO
3
f
mod
SP
MDO
50
45
dBc
Noise
5)
@ 400 kHz off carrier
N
MDO
115
dBc/Hz
Frequency range
f
MDO
100
450
MHz
Mixer (900 MHz)
RF input level
900 MHz
P9
RF
23
17
dBm
LO-spurious at
RF/NRF port
@ P9
MIXLO
= 10 dBm
@ P9
RF
= 15 dBm
SP9
RF
40
dBm
MIXLO input level
0.05 to 2 GHz
P9
MIXLO
22
12
dBm
MIXO (100-
W load)
Frequency range
f
MIXO
50
450
MHz
Output level
6)
@ P9
MIXLO
= 15 dBm
P9
MIXO
70
mV
rms
Carrier suppression
@ P9
MIXLO
= 15 dBm
CS9
MIXO
20
dBc
3)
PFD can be used as a frequency comparator until 300 MHz for loop acquisition
4)
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity
(degrading suppression of odd harmonics)
5)
With typical drive levels at MDLO- & I/Q-inputs
6)
1 dB compression point (CP-1)
U2895B
Rev. A3, 30-Sep-98
5 (16)
Electrical Characteristics (continued)
V
S
= 2.7 to 5.5 V, T
amb
= 20
C to +85
C, final test at 25
C
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Mixer (1900 MHz)
RF input level
0.5 to 2 GHz
P19
RF
23
17
dBm
LO-spurious at
RF/NRF ports
@ P19
MIXLO
= 10 dBm
@ P19
RF
= 15 dBm
SP19
RF
40
dBm
MIXLO input level
0.05 to 2 GHz
P19
MIXLO
22
12
dBm
MIXO (100
W load)
Output level
6)
@ P19
MIXLO
= 17 dBm
P19
MIXO
55
mVrms
Carrier suppression
@ P19
MIXLO
= 17 dBm
CS19
MIXO
20
dBc
Charge-pump output CPO (V
VSP
= 5 V; V
CPO
= 2.5 V)
Pump-current pulse
CPC open for DC
| I
CPO
|
0.7
1
1.3
mA
p
p
R
CPC
= 2.2 k
7)
| I
CPO 2
|
1.4
2
2.6
mA
P
CPC
= 680
7)
| I
CPO_4
|
3
4
5
mA
TK pump current
Tk_| I
CPC
|
15
%/100
K
Mismatch source / sink
current
(I
CPOSI
I
CPOSO
)/I
CPOSI
I
CPOSO
= I
sourc
I
CPOSI
= I
sink
M
ICPO
0.1
Sensivity to VSP
|
DI
CPO
I
CPO
|
| D
VSP
VSP
|
S
ICPO
0.1
V
CPO
voltage range
V
CPO
0.5
V
VSP
0.6
V
Charge-pump control input CPC
Compensation capacitor
C
CPC
500
pF
Short circuit current
8)
CPC grounded
| I
CPCK
|
1.6
mA
Mode control
Sink current
V
MC
= VS
I
MC
60
mA
Power-up input PU (power-up for all functions, except mixer)
Settling time
Output power within 10%
of steady state values
S
PU
5
10
ms
High level
Active
V
PUH
2.0
V
Low level
Standby
V
PUL
0
0.4
V
High-level current
Active, V
PUH
= 2.2 V
I
PUH
50
75
mA
Low-level current
Standby, V
PUL
= 0.4 V
I
PUL
1
20
mA
Power-up input PUMIX (power-up for mixer only)
Settling time
Output power within 10%
of steady state values
t
setl
5
10
ms
High level
Active
V
PUMIXH
2.0
V
S2
V
Low level
Standby
V
PUMIXL
0
0.4
V
High-level current
Active, V
PUMIXH
= 2.2 V
I
PUMIXH
50
75
mA
Low-level current
Standby,
V
PUMIXL
= 0.4 V
I
PUMIXL
1
20
mA
6)
1 dB compression point (CP 1)
7)
R
CPC
: external resistor to GND for charge-pump current control
8)
See figure 7.
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