ChipFind - документация

Электронный компонент: U3660M

Скачать:  PDF   ZIP
U3660M-B
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
1 (7)
Baseband Delay Line (64
ms)
Description
The U3660M is an integrated baseband delay line circuit. It provides a delay of 64
ms for the color difference signals,
(R-Y) and
(B-Y), in multi-standard TVs.
Features
D One line delay time, addition of delayed and non-
delayed output signals
D Adjustment-free application, VCO without external
components
D Handles negative or positive colour-difference input
signals
D Clamping of ac-coupled input signals
[
(R-Y)
and
(B-Y)
]
D Line-locked by the sandcastle pulse
D No crosstalk between SECAM colour carriers
(diaphoty)
D Comb filtering functions for NTSC colour-difference
signals
D Correction of phase errors in the PAL system
Block Diagram
SC detector
Line memory
Shift register
Line memory
Clamping
Clamping
Vref
Vref
S+H
S+H
LPF
LPF
+
+
Control
PLL
Clock generator
Bias
12
11
9
10
(BY)
(RY)
VDD1
GND1
13
Ref
3 MHz
fsc
5
14
16
1
3
SSC pulse
(BY)
(RY)
VDD2
GND2
94 8223
"
"
"
"
Figure 1. Block diagram
U3660M-B
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
2 (7)
Pin Description
GND2
NC
SC
NC
NC
NC
V
DD2
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
95 11252
V
i(B-Y)
R
ref
V
O(B-Y)
V
O(R-Y)
GND1
V
DD1
V
i(R-Y)
NC
Figure 2. Connection diagram
Pin
Symbol
Function
1
V
DD2
Supply voltage for digital part
2
NC
Not connected
3
GND2
Ground for digital part
4
NC
Not connected
5
SC
Sandcastle pulse input
6
NC
Not connected
7
NC
Not connected
8
NC
Not connected
9
V
DD1
Supply voltage for analog part
10
GND1
Ground for analog part
11
V
O(R-Y)
(R-Y) output signal
12
V
O(B-Y)
(B-Y) output signal
13
R
ref
Resistor for internal reference
14
V
i(B-Y)
(B-Y) input signal
15
NC
Not connected
16
V
i(R-Y)
(R-B) input signal
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage (Pin 9)
V
DD1
0.5 to +7
V
Supply voltage (Pin 1)
V
DD2
0.5 to +7
V
Voltage at Pins 5, 11, 12, 14 and 16
V
n
0.5 to V
S
V
Output current, Pins 11 and 12
I
out
20
mA
Max. power dissipation
P
1.1
W
Storage temperature range
T
stg
25 to +150
C
Electrostatic protection
*
for input/output pins
200
V
*
MIL standard 883D, method 3015.7 machine model (all power pins connected together).
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage range (Pins 1 and 9)
V
S
4.5 to 6.0
V
Ambient temperature range
T
amb
0 to +70
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
80
K/W
U3660M-B
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
3 (7)
Electrical Characteristics
V
DD
= 5.0 V, T
amb
= +25
C, reference point Pin 3 and Pin 10 connected together,
super-sandcastle frequency of 15.625 kHz; unless otherwise specified.
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
DC-supply
Pins 1 and 9
Supply voltage
(analog part)
Pin 9
V
DD1
4.5
5.0
6.0
V
Supply voltage
(digital part)
Pin 1
V
DD2
4.5
5.0
6.0
V
Supply current
(analog part)
Pin 9
I
S1
3.5
8.0
mA
Supply current
(digital part)
Pin 1
I
S2
1
2
mA
Power dissipation
P
30
60
mW
Colour-difference input signals
Pins 14 and 16
Input signal
(R-Y) PAL and NTSC
(B-Y) PAL and NTSC
(R-Y) SECAM
(B-Y) SECAM
(peak-to-peak value)
Pin 16
Pin 14
Pin 16
Pin 14
V
i
V
i
V
i
V
i
0.525
0.665
1.05
1.33
1.0
1.0
2.0
2.0
V
V
V
V
Input resistance
Pins 14 and 16
R
14, 16
40
k
W
Input capacitance
Pins 14 and 16
C
14, 16
10
pF
Input clamping voltage
non color input level
during clamping,
Pins 14 and 16
V
14
,
16
1.45
V
Colour-difference output signals
Pins 11 and 12
Output signal
(R-Y) at Pin 11
(B-Y) at Pin 12
(peak-to-peak value)
all standards
all standards
V
O
V
O
1.05
1.33
V
V
Ratio of output amplitudes
at equal input signals
V11
V12
0.4
0
+0.4
dB
DC output voltage
Pins 11 and 12
V
11, 12
3.0
V
Output resistance
Pins 11 and 12
R
11, 12
400
W
Gain for PAL and NTSC
Gain for SECAM
ratio V
O
/V
i
ratio V
O
/V
i
G
v
G
v
5.5
1.0
6.0
0
6.5
+1.0
dB
dB
Ratio of output signals on
Pins 11 and 12 for adjacent
time samples at constant in-
put signals
V
i
14,16
= 1.33 V
(peak-to-peak value)
SECAM signals
V
(n)
V
(n+1)
0.1
+0.1
dB
Noise voltage
(RMS value, Pins 11
and 12)
V
i 14,16
= 0
R
Gen
< 300
W
f = 10 kHz to 1 MHz
V
noise
1.2
mV
Delay of delayed signals
t
d
63.94
64.0
64.06
ms
Delay of non-delayed
signals
t
d
85
ns
U3660M-B
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
4 (7)
Unit
Max.
Typ.
Min.
Symbol
Test Conditions / Pins
Parameters
Transient time of delayed
signal at Pin 11 respec-
tively Pin 12
300 ns transient of SECAM
input signal, C
load
= 22 pF
t
tr
550
ns
Transient time of non-
delayed signal at Pin 11
respectively Pin 12
300 ns transient of SECAM
input signal, C
load
= 22 pF
t
tr
350
ns
Sandcastle pulse input
Pin 5
Sandcastle frequency
f
SC
14.0
15.625
17.0
kHz
Top pulse voltage
the leading edge of the
burst-key pulse is used for
timing
V
5
3
7
V
Internal slicing level
V
slice
V
5
2.0
V
5
1.5
V
5
1.0
V
Input current
I
5
10
mA
Input capacitance
C
5
10
pF
22 nF
47
mF
10
W
22 nF
47
mF
1 nF
1 nF
(RY)
(BY)
nc
1
9
2,4,6,7,8,15
5
13
3
10
16
14
11
12
Chroma
decoder
(RY)
(BY)
11 k
W
SC pulse
6.8 k
W
Rref
1 M
W
220 nF
94 8280
U 3660 M
10
W
+12 V
5V1
560
W
Figure 3. Typical application circuit
U3660M-B
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
5 (7)
Internal Pin Circuits
94 8678
14,16
Figure 4. Colour difference signal inputs
94 8676
11,12
Figure 5. Colour difference signal outputs
5
94 8675
Figure 6. Sandcastle pulse input
13
94 8677
Figure 7. Internal reference voltage