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Электронный компонент: U3666M-MFP

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U3666M
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
1 (9)
Baseband Delay Line 64
ms (Improved Version of U3665M)
Application
In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs
Description
The integrated delay line circuit U3666M is suitable for
all chroma decoders with baseband color-difference
outputs. It is suitable for PAL-, SECAM- and
NTSC-signals as well. The U3666M contains two
separate delay lines for processing (RY)-output and
(BY)-output separately. The delay is performed by inter-
nally switched capacitors. On-chip postfiltering avoids
the need for external filter components. In the case of the
U3666M, the postfilter is tuned to Bessel-characteristic.
A summing circuitry combines the information of
adjacent TV-lines, thus giving an interpolated sum for the
PAL-system, storing preceeding lines for the SECAM-
system and providing a comb-filtered output for
NTSC-signals. Due to internally generated timing,
synchronization is easily done by feeding a line-frequent
impulse (usually the SC-impulse) to the sync-input of
the IC.
Features
D One line delay time, addition of delayed and
non-delayed output signals
D Adjustment-free application, VCO without
external components
D Handles negative or positive color-difference
input signals
D Improved latch-up stability
D Improved power supply rejection ratio (PSRR)
D No crosstalk between SECAM color
carriers (diaphoty)
D Comb-filtering functions for NTSC color-
difference signals
D Correction of phase errors in the PAL system
SC detector
Line memory
Shift register
Line memory
Clamping
Clamping
V
Ref
V
Ref
S+H
S+H
LPF
LPF
+
+
Control
PLL
Clock generator
12
11
9
10
(BY)
(RY)
V
DD1
GND1
3 MHz
f
SC
5
14
16
1
3
SC pulse
(BY)
(RY)
V
DD2
GND2
94 8846
"
"
"
"
Bias
Figure 1. Block diagram
U3666M
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
Preliminary Information
2 (9)
Ordering Information
Extended Type Number
Package
Remarks
U3666M-MDP
DIP16
U3666M-MFP
SO16
Pin Description
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND2
NC
95 10649
SC
NC
NC
NC
V
DD2
NC
V
i
(BY)
NC
V
o
(BY)
V
0
(RY)
GND1
V
DD1
V
i
(RY)
NC
Figure 2. Connection diagram
Pin
Symbol
Function
1
V
DD2
Supply voltage for digital part
2
NC
Not connected
3
GND2
Ground for digital part
4
NC
Not connected
5
SC
Sandcastle-pulse input
6
NC
Not connected
7
NC
Not connected
8
NC
Not connected
9
V
DD1
Supply voltage for analog part
10
GND1
Ground for analog part
11
V
o
(RY)
(RY) output signal
12
V
o
(BY)
(BY) output signal
13
NC
Not connected
14
V
i (BY)
(BY) input signal
15
NC
Not connected
16
V
i (RY)
(RY) input signal
Absolute Maximum Ratings
Reference point Pin 3, 10, unless otherwise specified
Parameters
Symbol
Min.
Typ.
Max.
Unit
Supply voltage (Pin 9)
V
DD1
0.5
+7
V
Supply voltage (Pin 1)
V
DD2
0.5
+7
V
Voltage on Pins 5, 11, 12, 14 and 16
V
n
0.5
V
S
V
Output current, (Pin 11, Pin 12)
I
out
20
mA
Power dissipation
P
1.1
W
Storage temperature range
T
stg
25
+150
C
Electrostatic protection* for input/ output pins
500
V
* MIL standard 883D, method 3015.7 machine model (all power pins connected together)
Operating Range
Parameters
Symbol
Value
Unit
Supply-voltage range (Pin 1, Pin 9)
V
s
4.5 to 5.5
V
Ambient-temperature range
T
amb
10 to +70
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
80
K/W
U3666M
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
3 (9)
Electrical Characteristics
V
DD
= 5.0 V, T
amb
= 25
C, reference point, Pin 3 and Pin 10 connected together, sandcastle frequency of 15.625 kHz;
unless otherwise specified
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
DC-supply
Pin 1, 9
Supply voltage (analog part)
Pin 9
V
DD1
4.5
5.0
5.5
V
Supply voltage (digital part)
Pin 1
V
DD2
4.5
5.0
5.5
V
Supply current (analog part)
Pin 9
I
S1
3.5
8.0
mA
Supply current (digital part)
Pin 1
I
S2
1
2
mA
Power dissipation
P
30
60
mW
Color-difference input signals
Pin 14, 16
Input signal
(peak-to-peak value)
(RY) PAL and NTSC
Pin 16
V
i
0.525
1.0
V
(BY) PAL and NTSC
Pin 14
V
i
0.665
1.0
V
(RY) SECAM
Pin 16
V
i
1.05
2.0
V
(BY) SECAM
Pin 14
V
i
1.33
2.0
V
Input resistance
During clamping
R
14
, R
16
40
k
W
Input capacitance
C
14
, C
16
10
pF
Input clamping voltage
Non color input level
during clamping
V
14
V
16
1.45
V
Color-difference output signals
Pin 11, 12
Output signal
(peak-to-peak value)
(RY)
All standards
Pin 11
V
o
1.05
V
(BY)
All standards
Pin 12
V
o
1.33
V
Ratio of output amplitudes at
equal input signals
V
11
/V
12
0.4
0
+0.4
dB
DC output voltage
Pin 11, 12
V
11,12
3.0
V
Output resistance
Pin 11, 12
R
11,12
400
W
Gain for PAL and NTSC
Ratio V
o
/ V
i
G
v
5.5
6.0
6.5
dB
Gain for SECAM
Ratio V
o
/ V
i
G
v
0.5
0
+0.5
dB
Ratio of output signals for
adjacent time samples at
constant input signals
V
i 14,16
= 1.33V
pp
,
SECAM signals,
Pin 11 / Pin 12
V
(n)
/
V
(n+1)
0.1
dB
Noise voltage
(RMS value)
V
i 14,16
= 0, R
gen
< 300
W
f = 10 kHz to 1 MHz
Pin 11, 12
V
noise
1.2
mV
Delay of delayed signals
t
d
63.94
64.0
64.06
s
Delay of non-delayed signals
t
d
65
ns
Transient time of delayed
signal
300 ns transient of SECAM
input signal, C
load
= 22 pF
Pin 11, 12
t
tr
550
ns
Transient time of
non-delayed signal
300 ns transient of SECAM
input signal, C
load
= 22 pF
Pin 11, 12
t
tr
350
ns
Sandcastle-pulse input
Pin 5
Sandcastle frequency
f
SC
14.0
15.625
17.0
kHz
Top pulse voltage
The leading edge of the burst-
key pulse is used for timing
V
5
3
Vs+0.7
V
Internal slicing level
V
slice
V
5
1.5
V
5
1.25
V
5
1.0
V
Input current
I
5
10
A
Input capacitance
C
5
10
pF
U3666M
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
Preliminary Information
4 (9)
H-pulse
BGP
0.3
ms
1.6
ms
SC-impulse
Internal clamping
95 10355
Figure 3. Timing of internal clamping
1.6 V
No higher than
V
S
+ 0.7 V
At least 1.6 V
BGP
H
V
95 10226
Figure 4. Restrictions to SC pulse
U3666M
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
5 (9)
22 nF
47
mF
10
W
22 nF
47
mF
1 nF
1 nF
"(RY)
"(BY)
NC
1
9
2,4,6,7,8,13,15
5
3
10
16
14
11
12
Chroma
decoder
"(RY)
"(BY)
SC pulse
94 8848
Baseband delay line
10
W
+12 V
5V1
560
W
*)
*)
Figure 5. Typical application circuit
*)Depends on application (5 V - or 12 V SC pulse)
10 k
W
6.8 k
W
SC-impulse
12 V
5
SC in
Baseband
delay
line
95 10227
Figure 6. Application with 12 V SC-pulse
SC-impulse
5 V
5
SC in
95 10354
Baseband
delay
line
Figure 7. Application with 5 V SC-pulse