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Электронный компонент: U429B-FP

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U429B-FP
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96
1 (4)
Driver For IR Transmitter Diodes (Current Sink)
Technology: Bipolar
Features
D Constant current for IR signal 320 mA
D Undervoltage control with indicator driver
D Constant current output for control LED 100 mA
D Current stabilisation starts at V
CE
= 1 V
D Control voltage V
4
= 2 to 13.2 V
D Minimum driver current I
4
= 0.4 mA
D Additional switching transistor I
C
= 20 mA
Package: SO8
Figure 1. Block diagram
Pin Description
Pin
Symbol
Function
1
Ground
Negative supply terminal
2
V
O
Switching output
(standby/ operation)
3
V
I
Control input
(standby/ operation)
4
V
I
Signal input to drive the current
source
Pin
Symbol
Function
5
V
S1
Positive supply voltage terminal
6
I
O
Undervoltage indicator output
(battery control)
7
I
O
IR diode output signal
8
V
S2
Supply voltage for the control
stages of constant current outputs
U429B-FP
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96
2 (4)
Absolute Maximum Ratings
Reference point Pin 1
Parameters
Symbol
Value
Unit
Supply voltage
Pins 5 and 8
+V
S1, S2
14
V
Input voltage
Pins 3 and 4
V
I
14
V
Output voltage
Pins 2, 6 and 7
V
O
14
V
Collector current
Pin 2
I
C
25
mA
Power dissipation
T
amb
= 80
C
P
tot
150
mW
Junction temperature
T
j
125
C
Ambient temperature range
T
amb
40 to +85
C
Storage temperature range
T
stg
40 to +125
C
Thermal Resistance
Parameters
Symbol
Volue
Unit
Junction ambient
R
thJA
160
K/W
Electrical Characteristics
V
S1
= V
S2
= 9 V, T
amb
= 80
C, reference point Pin 1, unless otherwise specified
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Supply voltage range
Pin 5
V
S1
2.8
13.2
V
Pin 8
V
S2
2
13.2
V
Battery voltage control
Switching threshold
U429BFP
Pin 5
V
S1
6.35
6.7
7.15
V
Regulated pulse output current
IRsignal, V
7
= 7 V
Pin 7
I
O
240
320
400
mA
Undervoltage indicator
V
6
= 4 V, @ V
S1
= V
S2
= 4.5 V
Pin 6
I
O
71
100
125
mA
IRsignal
V
7
= 3 V, @ V
S1
= V
S2
= 5 V
Pin 7
I
O
192
250
328
mA
Undervoltage indicator
V
6
= 3 V, @ V
S1
= V
S2
= 4.5 V
Pin 6
I
O
71
95
118
mA
Collector saturation voltage
IRsignal i
7
= 200 mA
Pin 7
V
O
0.8
V
Undervoltage indicator
i
6
= 60 mA, V
S1
= V
S2
= 4.5 V
Pin 6
V
O
0.8
V
Switching transistor
I
2
= 10 mA, V
3
= 4 V
Pin 2
V
O
100
mV
I
2
= 20 mA, V
3
= 7 V
Pin 2
V
O
500
mV
U429B-FP
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96
3 (4)
Parameters
Test Conditions / Pin
Symbol
Min.
Typ.
Max.
Unit
Collector leakage current
IR-signal
Pin 7
I
CEO
1
mA
Undervoltage indicator
Pin 6
I
CEO
0.5
mA
Switching transistor
Pin 2
I
CEO
0.3
mA
Driver
Pin 8
I
O
0.3
mA
Switching transistor, internal
Pin 5
I
O
0.3
mA
Control voltage range
Pin 3
V
I
2.5
13.2
V
Pin 4
V
I
2.5
13.2
V
Control current
Pin 3
I
I
0.25
mA
Pin 4
I
I
0.15
mA
Input resistance
Pin 3
R
I
3
6
9
k
W
Pin 4
R
I
4
8
12
k
W
Dimensions in mm
U429B-FP
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96
4 (4)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423