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Электронный компонент: U4479B

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U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
1 (11)
DVB-Cable IF Converter and
Full Multi-Standard Video-/Sound IF Processing
Description
The U4479B is a bipolar circuit for the processing of
cable DVB IF (Digital Video Broadcasting) and multi-
standard analog TV IF signals. The combi circuit
processes QAM modulated IF signals, all TV video IF
with negative/ positive modulation and the FM/ NICAM,
AM sound IF signals. With 5 V supply voltage the IC is
suitable for cable DVB receiver (set top boxes).
Features
D 5 V supply voltage; low power consumption
D DVB signal processing with a converter for the 2nd IF;
VCO is controlled by an external PLL
D Active carrier generation by FPLL principle
(frequency-phase-locked-loop) for true synchronous
demodulation in the "analog mode"
D Switchable VCO frequency (33.4/38.9/43.0 MHz)
D Very linear video demodulation, good pulse response
and excellent intermodulation figures
D Bandwidth of the output signal 10 MHz (1 dB) in
DVB mode
D Alignment-free AFC
D AGC for negative modulation signals (peak sync
detection) and for positive modulation (peak white/
black level detector)
D AGC with average detection for the QAM modulated
DVB signal, reference level is adjustable
D Tuner AGC with adjustable take over point
D Alignment-free quasi parallel sound (QPS) mixer for
FM/NICAM sound IF signals
D Complete alignment-free AM demodulator with gain
controlled AF output
D Separate SIF-AGC with average detection
D Parallel operation of the AM demodulator and QPS
mixer (for NICAM-L stereo sound)
D Two IF inputs for DVB-/Analog Video IF
D One sound IF input
Ordering Information
Extended Type Number
Package
Remarks
U4479B-MFLG3
SO28
Taped and reeled
U4479B
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
Preliminary Information
2 (11)
Block Diagram
Tuner
AGC
SIF
AGC
Band
Gap
Control
AGC:
QAM
neg./pos.
AFC
FPLL
VCO
PLL
I
2
C
Loop
filter
AFC
IF 2
Tuner
SIF
V
S
CVBS
or
2nd IF (DVB)
Standard
Input
select
AM
FM
95 9816
5
6
9
10
14
Ref
(DVB)
7
12
11
1
2
24
3
4
8
21
25
19
23
22
20
18
13
17
16
15
Frequ.
switch
27
26
28
IF 1
Figure 1. Block diagram
U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
3 (11)
Pin Description
1
2
3
4
5
6
7
8
10
9
27
22
21
20
18
19
17
12
11
28
25
26
23
24
V
i,IF1
C
AGC,IF
GND
V
i,IF2
V
i,IF2
R
top
C
AGC,SIF
V
i,IF1
I
tun
C
Ref
V
i,SIF
V
i,SIF
V
vco
V
vco
GND
V
LO
LF
V
tun
V
AFC
V
S
V
freq
V
o,AM
V
o,FM
AGC
Ref
16
15
14
13
14530
V
out
C
bl
V
mod
V
sw
Figure 2. Pinning
Pin
Symbol
Function
1, 2
V
i,SIF
SIF input (symmetrical)
3
C
Ref
Internal reference voltage (BG)
4
C
AGC,SIF
SIF-AGC (time constant)
5, 6
V
i,IF1
IF1 input (symmetrical)
7
C
AGC,IF
IF-AGC (time constant)
8
GND
Ground
9, 10
V
i,IF2
IF2 input (symmetrical)
11
R
top
Take over point, tuner AGC
12
I
tun
Tuner AGC output current
13
V
out
CVBS or 2nd IF output
14
C
bl
Capacitor black level detector
15
V
sw
IF input selector switch
16
V
mod
Modulation switch
17
V
freq
VCO frequency switch
18
V
tun
External VCO tuning voltage
19
LF
Loop filter
20
V
LO
Local oscillator output voltage
21
GND
Ground
22, 23
V
vco
VCO circuit (symmetrical)
24
V
s
Supply voltage
25
V
AFC
AFC output
26
V
o,AM
AF output AM sound
27
V
o,FM
Intercarrier output
28
AGC
Ref
AGC reference for DVB
operation
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage
V
S
5.5
V
Supply current
I
S
100
mA
Power dissipation, V
S
= 5.5 V
P
tot
550
mW
Output currents
I
out
5
mA
Junction temperature
T
j
125
C
Storage temperature
T
stg
25 to +125
C
Electrostatic handling *)
V
ESD
tbd
V
*) Equivalent to discharging a 200-pF capacitor through a 0-
W resistor
U4479B
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
Preliminary Information
4 (11)
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage range
V
S
4.5 to 5.5
V
Ambient temperature
T
amb
0 to +85
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
(when soldered to PCB)
R
thJA
75
K/W
Electrical Characteristics
V
S
= 5 V, T
amb
= +25
C
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
DC supply
Supply voltage
V
S
4.5
5.0
5.5
V
Supply current
I
S
80
100
mA
Video IF- and DVB IF inputs
Input sensitivity,
RMS value
v
in
80
120
mV
Input impedance
See note 1
R
in
1.2
k
W
Input capacitance
See note 1
C
in
2
pF
Video IF AGC (negative/ positive modulation)
IF gain control range
G
v
60
65
dB
AGC capacitor
C
AGC
2.2
mF
Black level capacitor
C
BL
100
nF
DVB AGC (QAM modulation)
IF gain control range
IF2 output voltage
Pin 13 = 1.8 Vpp
G
v
60
65
dB
Tuner AGC
Available tuner
AGC current
I
tun
1
2
4
mA
Allowable output voltage
V
out
0.3
13.5
V
IF slip tuner AGC
Current I
tun
: 10% to 90%
G
IF
8
10
dB
IF input signal for
minimum take over point
v
in
4
mV
IF input signal for
maximum take over point
v
in
40
mV
Variation of the take over
point by temperature
DT
amb
= 55
C
IF AGC: G
v
= 46 dB
Dv
in
2
3
dB
U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
5 (11)
Electrical Characteristics (continued)
V
S
= 5 V, T
amb
= +25
C
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
FPLL and VCO
Max. oscillator frequency
For carrier generation
f
vco
70
MHz
Capture range
f
vco
= 38.9 MHz
C
vco
= 8.2 pF
Df
cap
1.4
MHz
Oscillator drift
(free runing) as function of
temperature
See note 2,
DT
amb
= 55
C,
C
vco
= 8.2 pF,
f
vco
= 38.9 MHz
Df/
DT
0.3
%
Local oscillator output
signal
Internal control loop
switched off
LO
out
100
mV
Local oscillator control
signal
Internal control loop
switched off
v
tun
0.5
4.5
V
CVBS and 2nd IF output
Output current source
sink
I
out
2
5
4
mA
mA
Output resistance
See note 1
R
out
100
W
Output amplitude
DVB signal
CVBS signal
Peak to peak value
v
o,vid
1.6
1.8
1.8
2.0
2.0
2.2
V
V
Difference of the CVBS sig-
nals
Between B/G and L
D
v
o,vid
10
%
DC output voltage
DVB mode
2.2
V
Sync level
B/G mode
V
sync
1.2
V
Zero carrier level for
negative modulation
(Ultra white level)
B/G mode
V
DC
3.4
V
Zero carrier level for
positive modulation
(Ultra black level)
L mode
V
DC
1.14
V
Supply voltage influence on
the ultra black- and ultra
white level
D
V/
V
1
%/V
Bandwidth (1 dB) of
2nd IF, in DVB mode
R
L
1 k
W, C
L
50 pF
B
10
MHz
Frequency response over
AGC range
D
B
2.0
dB
Differential gain error
DG
2
5
%
Differential phase error
DP
2
5
deg
Intermodulation 1.07 MHz
See note 3
a
IM
52
60
dB
Video signal-to-noise ratio
Weighted , CCIR567
S/
N
56
60
dB
Residual vision carrier
fundamental wave
38.9 MHz and second
harmonic 77.8 MHz
v
res1
5
15
mV
U4479B
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
Preliminary Information
6 (11)
Electrical Characteristics (continued)
V
S
= 5 V, T
amb
= +25
C
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
AFC output
Control slope
D
I/
D
f
0.7
mA/kHz
Frequency drift by
temperature
Related to the picture
carrier frequency
0.25
0.6
%
Output voltage
upper limit
lower limit
V
AFC
V
S
0.4
0.4
V
V
Output current
I
AFC
0.2
mA
SIF input
Input sensitivity,
RMS value
Output signal: 3 dB
v
in
80
120
V
Input impedance
See note 1
R
in
1.2
k
W
Input capacitance
See note 1
C
in
2
pF
SIF AGC
IF gain control range
G
v
60
65
dB
AGC capacitor
C
AGC
4.7
mF
Intercarrier output FM (see note 4)
DC output voltage
V
DC
2
V
Output resistance
See note 1
R
out
150
W
Sound IF output voltage,
RMS value
5.5 MHz output voltage
v
in
= 10 mV
v
out
200
mV
Weighted signal-to-noise
ratio: (CCIR 468)
Black screen: Channel 1/2
Grid pattern: Channel 1/2
Grey screen 50%:
Channel 1/2
Reference signal:
v
in
=10 mV; f
mod
= 1 kHz;
FM dev. =
27 kHz
tested with the double FM
demodulator U2860B;
B/G modulated IF signal
S/N
S/N
S/N
60/58
54/52
60/57
dB
dB
dB
AF output AM (see note 5)
DC output voltage
V
DC
2.2
V
Output resistance
See note 1
R
out
150
W
AF output voltage,
RMS value
m = 54 %
v
oAF
500
mV
Total harmonic distortion
m = 54%
f
mod
= 1kHz, 12.5kHz
THD
1
2
%
Signal-to-noise ratio
Reference:
m = 54%, f
mod
= 1 kHz,
22 kHz low-pass filter
S/N
65
dB
IF input switch (Pin 15)
Control voltage for
HIGH: IF1 input active
LOW: IF2 input active
See note 6
Vsw
2.5
3.5
1.5
V
V
Switching current
Pin 15 to ground
Isw
30
mA
U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
7 (11)
Electrical Characteristics (continued)
V
S
= 5 V, T
amb
= +25
C
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Modulation switch (pin 16):
Control voltage for
HIGH: neg. modulation
LOW: pos. modulation
See note 6
V
mod
2.5
3.5
1.5
V
V
Switching current
Pin 16 to ground
I
mod
30
mA
Frequency switch (Pin 17)
Control voltage for
HIGH: f
VCO
= 38.9 MHz
LOW: f
VCO
= 33.4/43 MHz
(depends on Pin 16)
see also note 6
V
freq
3.35
3.5
3.2
V
V
Switching current
Pin 17 to ground
I
freq
700
mA
Table of Switch Settings
Active IF input
IF 1 (Pins 5, 6)
IF 2 (Pins 9, 10)
IF input switch (Pin 15)
Pin 15 `high'
Pin 15 `low'
Standard
DVB
BG
L
L'
VCO frequency
43 MHz
38.9 MHz
38.9 MHz
33.4 MHz
(see note 7)
Modulation switch (Pin 16)
`high'
`high'
`low'
`low'
Frequency switch (Pin 17)
`low'
`high'
`high'
`low'
Notes
1.
This parameter is given as an application information and it is not tested during production.
2.
The oscillator drift is related to the picture carrier frequency, at external temperature-compensated LC circuit
3.
a(1.07) = 20 log (4.43 MHz component/ 1.07 MHz component);
a(1.07) value related to black-white signal
input signal conditions:
picture carrier
0 dB
color carrier
6 dB
sound carrier
24 dB
4.
Picture carrier PC = 38.9 MHz; sound carrier SC
1
= 33.4 MHz, SC
2
= 33.16 MHz;
PC/SC
1
= 13 dB; PC/SC
2
= 20 dB; PC unmodulated (equivalent to sync peak level)
5.
Sound carrier SC = 32.4 MHz, modulated with f
mod
= 1 kHz, m = 54%; v
in
= 10 mV
6.
Without control voltage `High Level' mode is automatically selected
7.
For L': AFC is adjustable with external potentiometer
U4479B
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
Preliminary Information
8 (11)
Basic Application Circuit
28
12
3
4
U4479B
56
7
8
9
10
11
12
13
14
27
26
25
24
23
22
21
20
19
18
17
16
15
C
10
8.2 pF
L
1
C
11
10 nF
C
12
22 F
R
4
51 k
R
5
2.2 k
R
3
51 k
W
C
13
10 nF
3.3 nF
C
14
R
2
150
C
9
470 nF
P
3
50 k
P
2
50 k
W
C
26
10 nF
C
27
10 nF
C
28
10 nF
Frequ.
Standard
VIFin
DVB
Ref
Inter
carrier
AM
AFC
+5 V
VCO
Frequency
Loop
filter
ext.
Loop
filter
Switching
C
5
P
1
10 k
C
6
4.7 F
C
7
Sound filter
VIF filter
DVB filter
V
Ref
AGC
Sound
SIF 1
IF 1
IF 2
AGC
V
ideo
T
uner AGC
take over
point
C
8
100 nF
Black
level
T
uner
AGC
CVBS
or 2 nd IF
1
U4744B *
2
3
4
8
7
6
5
R
1
50
W
10 nF
C
1
C
2
10 nF
IF
C
3
10 nF
C
4
2.2 F
+12 V
96 12279
W
W
W
W
m
2.2 F
m
m
2.2 F
m
W
m
current
current
* not for new development
Figure 3. Basic application circuit
U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
9 (11)
IM3 Measurements and Application Recommendations for DVB Operation
IM3 Measurement
For correct measurement of IM3 with the 2-carrier
method, it is necessary to control the internal IF amplifier
via an external voltage at Pin 7. The criteria for a correct
value of the external control voltage is the output
amplitude of 1.8 V
pp
(or lower). Please note that each
change of the input level requests a correction of the
external gain control voltage at Pin 7 in order to achieve
the 1.8-V
pp
output level again. In this case, IM3 is nearly
43 dB, independent from the input level. With an output
voltage of 1.5 V
pp
only, the IM3 is about 50 dB.
Anyway, if the output amplitude is more than 1.8 V
pp
(specified), the IM3 will decrease rapidly. In the graphic
below, IM3 is shown for two different conditions:
30
32
34
36
38
40
42
44
46
48
50
40
50
60
70
80
90
100
IM3 ( dB )
Input voltage (each carrier) ( dB
mV )
14778
V
out
= 1.5 V
pp
V
out
= 1.8 V
pp
Figure 4. IM3 vs. IF input voltage and IF2out voltage
Test conditions: input: f
1
= 38 MHz,
f
2
= 39 MHz, LO = 43 MHz
Circuitry for External Gain Control
If the gain control of the IC is carried out by an external
DSP, the internal charge pumps of the AGC (Pin 7) have
to be overlapped by an external voltage source. The
internal AGC currents are
20
A. Therefore, the
minimum current capacity of the external voltage source
should be
30
A or more.
The circuitry shown in figure 5 takes some more current.
14581
S852T
10 k
100 nF
to Pin 7
+5 V
from DSP
Figure 5.
External LO Application
If the internal VCO is not used, the LO can be fed
unbalanced or balanced to the VCO Pins 22 and 23. The
application shown below is generating an unbalanced LO
signal by using a 36-MHz third-overtone quartz
reference. The application circuit is taken from IQD
Limited Crystal Product Data Book. The LO signal is fed
unbalanced with 1 nF coupling capacity to Pin 22. Pin 23
has to be blocked to ground with an 1-nF capacitor. The
typical LO amplitude is 100 dB
V. The variation of the
LO input amplitude should not exceed
5 dB (better:
3 dB).
560
100 pF
490 nH
4.7 k
47 pF
68 pF
560
1 nF
S852T
to Pin 22
+5 V
10 k
14582
Figure 6.
Note:
With external LO operation, Pin 18 (VCO tuning voltage)
should be connected to the supply voltage, and Pin 20
(LO output) should not be connected to the PCB.
U4479B
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
Preliminary Information
10 (11)
Package Information
13033
technical drawings
according to DIN
specifications
0.25
0.10
Package SO28
Dimensions in mm
0.4
1.27
16.51
18.05
17.80
2.35
7.5
7.3
9.15
8.65
10.50
10.20
0.25
28
15
1
14
U4479B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A2, 14-Jan-98
11 (11)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423