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Электронный компонент: U4793B

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U4793B
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
1 (5)
Overload Monitoring with Resistive Load, V
T
= 44.5 mV
Description
The IC U4793B in bipolar circuit, is designed to monitor
overload or a short circuit in automotive or industrial
applications. The threshold is tied to V
4,6
= V
S
V
T
whereas V
T
= 44.5 mV. It is independent of the supply
voltage, V
S.
If the voltage drop across shunt resistor, R
sh
,
exceeds this value, the output is turned on, otherwise the
output is turned off.
Without supply voltage or open input Pin 8, the output is
turned off. The output breakdown voltage is determined
by the Z-diodes Z
3
and Z
5
with a typical value of
V
Z
= 22 V.
A not used comparator input must be connected to Pin 7.
Features
D 10 kV ESD protection
D Two comparators with common reference
D Tight threshold tolerance
D Constant threshold
D NPN output
D Interference and damageprotection
according to VDE 0839
D EMI protection
D Reversal polarity protection
D Load-dump protection
Ordering Information
Extended Type Number
Package
Remarks
U4793B
DIP8
U4793BFP
SO8
Block Diagram
+

+
+
&
&
Z
2
2
7
4
8
6
5
3
1
R
1
150
W
V
S
V
Batt
R
sh
R
sh
Load
95 10608
0.6 V
S
OUT1
OUT2
Z
5
Z
3
Figure 1. Schematic and application circuit
U4793B
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
2 (5)
Pin Description
1
2
3
4
5
6
7
8
GND
V
S
OUT2
IN1
OUT1
IN2
V
Ref
Input
switch
95 10634
Pin
Symbol
Function
1
GND
Reference point, ground
2
V
S
Supply voltage
3
OUT2
Output 2
4
IN1
Input 1
5
OUT1
Output 1
6
IN2
Input 2
7
V
Ref
Reference voltage
8
Input
Input switch
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage
Pin 2, 7
V
S
16.5
V
Current consumption
t = 2 ms, measured at Pin 1 (GND)
Pin 1
I
1
1.5
A
Output current
Pin 3, 5
I
3,5
20
mA
Input voltage
Pin 4, 6
reference point Pin 7
V
4,6
6
V
Power dissipation
T
amb
= 95
C
DIP 8
SO 8
P
tot
420
360
mW
T
amb
= 60
C
DIP 8
SO 8
P
tot
690
560
mW
Ambient temperature range
T
amb
40 to +95
C
Storage temperature range
T
stg
55 to +125
C
Junction temperature
T
j
150
C
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
DIP8
SO8
R
thJA
R
thJA
110
160
K/W
K/W
U4793B
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
3 (5)
Electrical Characteristics
V
S
= 9 to 15 V, T
amb
= 40 to +95
C, figure 1, unless otherwise specified
Parameters
Test Conditions / Pin
Symbol
Min
Typ
Max
Unit
Supply voltage
Pin 2,7
V
S
9
15
V
Internal Z-diode Z
2
Pin 2
V
Z
20
V
Current consumption
V
S
= 12 V
Pin 1
measured at Pin 1 (GND)
I
1
4.5
6
mA
Output saturation voltage
V
S
= 9 V, I
3,5
= 10 mA
T
amb
= 25
C
Pin 3,5
V
sat
0.5
V
Output Z-diodes Z
3
, Z
5
Pin 3,5
V
Z
21
V
Control signal threshold
I
3,5
= 1 mA, figure 3 Pin 4,6
T
amb
= 25
C
V
T
43
44.5
46
mV
Temperature coefficient of
control signal threshold
TC
15
mV/K
Threshold voltage
Switch identification Pin 8
V
8
0.6 V
S
V
Input currents
Pin 4,6
I
I
100
nA
Pin 8
5
mA
Delay time
Switch-on
Pin 3,5
High to low
t
d(on)
6
ms
Switch-off
Low to high
t
d(off)
30
ms
12.00
11.90
12
V
4,6
V
0
t
d(off)
t
d(on)
10
20
30
40
50
60
0
t
95 10615
(V)
(V)
6
(ms)
Figure 2. Timing diagram
40
41
42
43
44
45
46
47
48
6
7
8
9
10 11 12 13 14 15 16
V
(mV)
V
Batt
(V)
13308
T
T
amb
= 95
C
25
C
40
C
Figure 3. Threshold voltage = f (V
Batt
and temperature)
U4793B
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
4 (5)
Package Information
13021
9.8
9.5
Package DIP8
Dimensions in mm
1.64
1.44
4.8 max
0.5 min
3.3
0.58
0.48
7.62
2.54
6.4 max
0.36 max
9.8
8.2
7.77
7.47
8
5
1
4
technical drawings
according to DIN
specifications
13034
technical drawings
according to DIN
specifications
Package SO8
Dimensions in mm
5.00
4.85
0.4
1.27
3.81
1.4
0.25
0.10
5.2
4.8
3.7
3.8
6.15
5.85
0.2
8
5
8
5
U4793B
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
5 (5)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423