THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
T H A T
C o r p o r a t i o n
1
2
3
4
5
6
7
SUB
NC
8
9
10
11
12
13
14
Q2 Q1
Q4 Q3
Figure 1. Pin
Configuration
0.7500.004
(19.050.10)
0.25.004
(6.350.10)
0.32 Max.
(8.13)
0.060
(1.52)
0.075
(1.91)
0.10 Typ.
(2.54)
0.018
(0.46)
0.1250.004
(3.180.10)
Typ.
1
0.010
(0.25)
Figure 2. Dual-In-Line Package Outline
Quad Low-Noise
PNP Transistor Array
THAT120
FEATURES
Four Matched PNP Transistors
Low noise -- 0.75
nV
Hz
High Speed -- 325 MHz f
t
Excellent Matching - 500 mV (typ)
Dielectrically Isolated
-25 V V
CEO
APPLICATIONS
Microphone Preamplifiers
Tape Head Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
DESCRIPTION
THAT120 is a quad, large-geometry monolithic
PNP transistor array which combines low noise, high
speed and excellent parametric matching. The large
geometry typically results in 25 W base spreading re-
sistance, producing 0.75
nV Hz
voltage noise. This
makes these parts an excellent choice for low-noise
amplifier input stages.
Fabricated on a Complementary Bipolar Dielec-
trically Isolated process, all four transistors are elec-
trically isolated from each other by a layer of oxide.
The resulting low collector-to-substrate capacitance
produces a typical f
t
of 325 MHz, for AC perfor-
mance similar to 2N3906-class devices. The dielec-
tric isolation also minimizes crosstalk and provides
complete DC isolation.
Substrate biasing is not required for normal oper-
ation, though the substrate should be grounded to
optimize speed. The one-chip construction assures
excellent parameter matching and tracking over tem-
perature.
0.050
(1.27)
Typ
0.245
(6.2)
Max
0.157
(3.99)
Max
0.018 (0.46)
Max
0.344 (8.74)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
1
Figure 3. Surface Mount Package Outline
Rev. 11/27/00
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25C)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Collector-Emitter Voltage
BV
CEO
I
C
= 1 mAdc, I
B
= 0
-25
-40
V
Collector-Base Voltage
BV
CBO
I
C
= 10 mAdc, I
E
= 0
-25
40
V
Emitter-Base Voltage
BV
EBO
I
E
= 10 mAdc, I
C
= 0
-5
V
Collector-Collector Voltage
BV
CC
100
200
V
Emitter-Emitter Voltage
BV
EE
100
200
V
Collector Current
I
C
-10
-20
mA
Emitter Current
I
E
-10
-20
mA
Operating Temperature Range
T
A
0
70
C
Maximum Junction Temperature T
JMAX
150
C
Storage Temperature
T
STORE
-45
125
C
Electrical Characteristics
2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Current Gain
h
fe
V
CB
= 10 V
I
C
= 1 mA
50
75
I
C
= 10 mA
50
75
Current Gain Matching
Dh
fe
V
CB
= 10 V, I
C
= 1 mA
--
5
--
%
Noise Voltage Density
e
N
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
--
0.75
--
nV / Hz
Gain-Bandwidth Product
f
t
I
C
= 1 mA, V
CB
= 10 V
325
MHz
DV
BE
(V
BE1
-V
BE2
; V
BE3
-V
BE4
)
V
OS
I
C
= 1 mA
--
0.5
3
mV
I
C
= 10 mA
--
0.5
3
mV
DI
B
(I
B1
-I
B2
; I
B3
-I
B4
)
I
OS
I
C
= 1 mA
--
700
1800
nA
I
C
= 10 mA
--
7
18
nA
Collector-Base Leakage Current
I
CBO
V
CB
= 25 V
--
-25
--
pA
Bulk Resistance
r
BE
V
CB
= 0 V, 10mA < I
C
< 10mA
--
2
--
W
Base Spreading Resistance
r
bb
V
CB
= 10 V, I
C
= 1mA
--
25
--
W
Collector Saturation Voltage
V
CE(SAT)
I
C
= 1 mA, I
B
= 100 mA
--
-0.05
V
Output Capacitance
C
OB
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
3
pF
Collector-Collector Capacitance
Q
1
/Q
2
; Q
3
/Q
4
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25C.
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