THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Document 600041 Rev 00

Low-Noise Matched Transistor Array ICs

FEATURES

4 Matched NPN Transistors (300)
4 Matched PNP Transistors (320)
2 Matched NPNs and PNPs (340)

Monolithic Construction

Low Noise
- 0.75 nV

Hz (PNP)

- 0.8 nV

Hz (NPN)

High Speed
- f

= 350 MHz (NPN)

- f

= 325 MHz (PNP)

Excellent Matching 500

typical between devices of same
gender

Dielectrically Isolated for low
crosstalk and high DC isolation

36V V

CEO

APPLICATIONS

Microphone Preamplifiers

Current Sources

Current Mirrors

Log/Antilog Amplifiers

Multipliers

Servos

DESCRIPTION

The

THAT

300

series

are

large-geometry,

4-transistor, monolithic NPN and/or PNP arrays ex-
hibiting both high speed and low noise, with excel-
lent parameter matching between transistors of the
same

gender.

With

typical

base-spreading

resistances of 25 ohms for the PNP devices
(30 ohms for the NPNs), their resulting low voltage
noise of under 1 nV/root-Hz makes the 300 series
ideally suited for low-noise amplifier input stages,
among other applications.

Fabricated in a dielectrically isolated, comple-

mentary bipolar process, each transistor is electri-
cally insulated from the others by a layer of

insulating oxide (not the reverse-biased PN junc-
tions used in conventional arrays) and exhibit
inter-device crosstalk and DC isolation similar to
that expected from discrete transistors. The result-
ing low collector-to-substrate capacitance produces
a typical NPN f

of 350 MHz (325 MHz for the

PNPs). Substrate biasing is not required for normal
operation, though the substrate should be grounded
to optimize speed and minimize crosstalk.

An eight-transistor bare-die array with similar

performance characteristics (the THAT 380G) is
also available from THAT Corporation. Please con-
tact us directly or through your local distributor for
more information.

T H A T

C o r p o r a t i o n

THAT 300 Series

Part Number

Configuration

Package

THAT300P

4-Matched NPN Transistors

DIP14

THAT300S

SO14

THAT320P

4- Matched PNP Transistors

DIP14

THAT320S

SO14

THAT340P

2 Matched NPN Transistors and

2 Matched PNP Transistors

DIP14

THAT340S

SO14

Table 1. Ordering Info

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 2

THAT300 Series Transistor Arrays

SPECIFICATIONS

Maximum Ratings (T

= 25°C)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

NPN Collector-Base Voltage

CBO

=10

mAdc, I

NPN Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

NPN Collector Current

C MAX

NPN Emitter Current

E MAX

PNP Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

PNP Collector-Base Voltage

CBO

= 10

mAdc, I

= 0

PNP Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

PNP Collector Current

C MAX

PNP Emitter Current

E MAX

Collector-Collector Voltage

±100

±200

Emitter-Emitter Voltage

±100

±200

Operating Temperature Range

°C

Maximum Junction Temperature

JMAX

150

°C

Storage Temperature

STORE

-45

125

°C

SUB

THAT 300

Fig 1. 300 Pinout

SUB

THAT 320

Fig 2. 320 Pinout

SUB

THAT 340

Fig 3. 340 Pinout

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600041 Rev 00

Page 3

1. All specifications subject to change without notice.
2. Unless otherwise noted, T

=25°C.

SPECIFICATIONS

(Cont'd)

NPN Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Current Gain

= 10 V

= 1 mA

100

= 10

100

NPN Current Gain Matching

= 10 V, I

= 1 mA

NPN Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.8

NPN Gain-Bandwidth Product

= 1 mA, V

= 10 V

350

MHz

NPN

(THAT300: V

BE1

-V

BE2 ;

BE3

-V

BE4

) (THAT340: V

BE1

-V

BE2

)

= 1 mA

±0.5

±3

= 10

±0.5

NPN

(THAT300: I

-I

B2,

-I

) (THAT340: I

-I

)

= 1 mA

±500

±1500

= 10

±5

NPN Collector-Base Leakage Current I

CBO

= 25 V

NPN Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

NPN Base Spreading Resistance

= 10 V, I

= 1 mA

NPN Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

NPN Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)

= 0 V, 100 kHz

0.7

PNP Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

PNP Current Gain

= 10 V

= 1 mA

= 10

PNP Current Gain Matching

= 10 V, I

= 1 mA

PNP Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.75

PNP Gain-Bandwidth Product

= 1 mA, V

= 10 V

325

MHz

PNP

(THAT320: V

BE1

-V

BE2;

BE3

-V

BE4

) (THAT340: V

BE3

-V

BE4

)

= 1 mA

±0.5

±3

= 10

±0.5

PNP

(THAT320: I

-I

B2;

-I

) (THAT340: I

-I

)

= 1 mA

±700

±1800

= 10

±7

PNP Collector-Base Leakage Current I

CBO

= 25 V

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 4

THAT300 Series Transistor Arrays

SPECIFICATIONS

(Cont'd)

PNP Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

PNP Base Spreading Resistance

= 10 V, I

= 1 mA

PNP Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

PNP Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)

= 0 V, 100 kHz

0.6

Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-

sumed by THAT Corporation for it's use nor for any infringements of patents or other rights of third parties which may
result from it's use.

LIFE SUPPORT POLICY

THAT Corporation products are not designed for use in life support equipment where malfunction of such products

can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer's own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.

CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.

It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-

ages can accumulate and discharge without detection causing a loss of function or performance to occur.

The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-

sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.

Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-

tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.

0.750±0.004

(19.05±0.10)

0.25±.004

(6.35±0.10)

0.30 ±0.02

(7.62 ±0.5)

0.060

(1.52)

0.075
(1.91)

0.10 Typ.

(2.54)

0.018

(0.46)

0.125±0.004

(3.18±0.10)

Typ.

0.010

(0.25)

Note:

JA = 100 °C / W

Figure 4. Dual-In-Line Package Outline

0.050

(1.27)

Typ

0.245

(6.2)

Max

0.157

(3.99)

Max

0.018 (0.46)
Max

0.344 (8.74)

Max

0.069

(1.75)

Max

0.010

(0.25)

Max

Note:

JA = 100 °C / W

Figure 5. Surface-Mount Package Outline

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