4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C NOVEMBER 1981 REVISED APRIL 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D
Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
D
High Direct-Current Transfer Ratio
D
High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
D
High-Speed Switching
t
r
= 7
s, t
f
= 7
s Typical
D
Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
D
Safety Regulatory Approval
UL/CUL, File No. E65085
absolute maximum ratings at 25
C free-air temperature (unless otherwise noted)
Input-to-output peak voltage (8-ms half sine wave): 4N35
3.55 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N36 2.5
kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N37 1.5
kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35
2.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . .
4N36 1.75
kV
. . . . . . . . . . . . . . . . . . . . . . . .
4N37
1.05 kV
. . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage
70 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1)
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode forward current: Continuous
60 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1
s, 300 pps)
3 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor continuous collector current
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25
C free-air temperature:
Infrared-emitting diode (see Note 2)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 3)
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25
C lead temperature:
Infrared-emitting diode (see Note 4)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 5)
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range, T
A
55
C to 100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
55
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES:
1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100
C free-air temperature at the rate of 1.33 mW/
C.
3. Derate linearly to 100
C free-air temperature at the rate of 4 mW/
C.
4. Derate linearly to 100
C lead temperature at the rate of 1.33 mW/
C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100
C lead temperature at the rate of 6.7 mW/
C.
Copyright
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE
(TOP VIEW)
4N35 only
NC No internal connection
schematic
ANODE
CATHODE
NC
COLLECTOR
BASE
EMITTER
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C NOVEMBER 1981 REVISED APRIL 1998
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at 25
C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC = 100
A,
IE = 0,
IF = 0
70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC = 10 mA,
IB = 0,
IF = 0
30
V
V(BR)EBO
Emitter-base breakdown voltage
IE = 100
A,
IC = 0,
IF = 0
7
V
IR
Input diode static reverse current
VR = 6 V
10
A
IIO
Input-to-output current
VIO = rated peak value,
t = 8 ms
100
mA
VCE = 10 V,
IF = 10 mA,
IB = 0
10
IC(on)
On-state collector current
VCE = 10 V,
TA = 55
C
IF = 10 mA,
IB = 0,
4
mA
(
)
VCE = 10 V,
TA = 100
C
IF = 10 mA,
IB = 0,
4
VCE = 10 V,
IF = 0
IB = 0
1
50
nA
IC(off)
Off-state collector current
VCE = 30 V,
TA = 100
C
IF = 0,
IB = 0,
500
A
hFE
Transistor static forward current transfer ratio
VCE = 5 V,
IC = 10 mA,
IF = 0
500
IF = 10 mA
0.8
1.5
VF
Input diode static forward voltage
IF = 10 mA,
TA = 55
C
0.9
1.7
V
IF = 10 mA,
TA = 100
C
0.7
1.4
VCE(sat)
Collector-emitter saturation voltage
IC = 0.5 mA, IF = 10 mA,
IB = 0 mA
0.3
V
rIO
Input-to-output internal resistance
VIO = 500 V, See Note 6
1011
Cio
Input-to-output capacitance
VIO = 0,
f = 1 MHz,
See Note 6
1
2.5
pF
JEDEC registered data
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
switching characteristics at 25
C free-air temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Time-on time
VCC = 10 V,
IC(on) = 2 mA,
7
10
s
toff
Turn-off time
CC
RL = 100
,
C(on)
See Figure 1
7
10
s
JEDEC registered data
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C NOVEMBER 1981 REVISED APRIL 1998
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
+
VCC = 10 V
Input
Output
(see Note B)
RL = 100
47
ton
toff
90%
10%
Output
Input
0 V
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50
,
tr
15 ns, duty cycle
1%,
tw = 100
s.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr
12 ns, Rin
1 M
,
Cin
20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
Figure 2
1
0.4
0.1
0
10
20
30
40
50
60
Off-State Collector Current nA
OFF-STATE COLLECTOR CURRENT
vs
FREE-AIR TEMPERATURE
10,000
70
80
90
100
10
4
100
40
1,000
400
4,000
TA Free-Air Temperature
C
I C(off)
VCE = 10 V
IB = 0
IF = 0
Figure 3
1.2
0.2
0.8
0
1.6
1
0.1
0.4
2
20
100
1.4
0.4
0.6
TRANSISTOR STATIC FORWARD
CURRENT TRANSFER RATIO (NORMALIZED)
vs
ON-STATE COLLECTOR CURRENT
IC(on) On-State Collector Current mA
0.2
1
4
10
40
VCE = 5 V
IF = 0
TA = 25
C
Normalized to 1 V
at IC = 1 mA
T
ransistor Static Forward Current T
ransfer Ratio (Normalized)
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