5,5 mm x 3,5 mm
Actual Size
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FEATURES
APPLICATIONS
DESCRIPTION
bq24100, bq24103
bq24105, bq24108
bq24113, bq24115
SLUS606C JUNE 2004 REVISED SEPTEMBER 2005
SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT
IC WITH INTEGRATED POWER FETs (bqSWITCHERTM)
Handheld Products
Ideal For Highly Efficient Charger Designs For
Single-, Two- or Three-Cell Li-Ion and
Portable Media Players
Li-Polymer
Industrial and Medical Equipment
Battery Packs
Portable Equipment
Integrated Synchronous Fixed-Frequency
PWM Controller Operating at 1.1 MHz With
0% to 100% Duty Cycle
The bqSWITCHERTM series are highly integrated
Integrated Power FETs For Up To 2-A Charge
Li-ion
and
Li-polymer
switch-mode
charge
Rate
management devices targeted at a wide range of
portable applications. The bqSWITCHERTM series
High-Accuracy Voltage and Current
offers integrated synchronous PWM controller and
Regulation
power FETs, high-accuracy current and voltage
Available In Both Stand-Alone (Built-In Charge
regulation, charge preconditioning, charge status, and
Management and Control) and
charge termination, in a small, thermally enhanced
System-Controlled (Under System Command)
QFN
package.
The
system-controlled
version
Versions
provides additional inputs for full charge management
under system control.
Status Outputs For LED or Host Processor
Interface Indicates Charge-In-Progress,
The bqSWITCHER charges the battery in three
Charge Completion, Fault, and AC-Adapter
phases: conditioning, constant current, and constant
Present Conditions
voltage.
Charge
is
terminated
based
on
user-
selectable minimum current level. A programmable
20-V Maximum Voltage Rating on IN and OUT
charge timer provides a safety backup for charge
Pins
termination. The bqSWITCHER automatically restarts
High-Side Current Sensing
the charge cycle if the battery voltage falls below an
Optional Battery Temperature Monitoring
internal threshold. The bqSWITCHER automatically
enters sleep mode when V
CC
supply is removed.
Automatic Sleep Mode for Low Power
Consumption
System-Controlled Version Can Be Used In
NiMH and NiCd Applications
Uses Ceramic Capacitors
Reverse Leakage Protection Prevents Battery
Drainage
Thermal Shutdown and Protection
Built-In Battery Detection
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
bqSWITCHER, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright 20042005, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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TYPICAL SINGLE CELL LI-ION STAND-ALONE CHARGER
UDG-04033
4
IN
6
VCC
19 STAT2
10 VSS
20
OUT
18
PGND
15
SNS
8
ISET1
bq24100RHL
9
12
7
16
1
3
OUT
ISET2
TS
TTC
IN
2
STAT1
5
TEMP
PACK+
PACK-
+
BATTERY
PACK
17
PGND
14
BAT
11
VTSB
V
IN
10
F
C
OUT
10
F
L
OUT
10
H
R
(SNS)
R
T1
R
T2
0.1
F
R
(ISET1)
R
(ISET2)
C
TTC
V
IN
V
IN
V
IN
D1
Adapter
Present
VTSB
D2
Done
D3
Charge
PG
CE
PWR PAD
bq24100, bq24103
bq24105, bq24108
bq24113, bq24115
SLUS606C JUNE 2004 REVISED SEPTEMBER 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
(1)
T
J
CHARGE REGULATION VOLTAGE (V)
INTENDED APPLICATION
PART NUMBER
(2) (3)
MARKINGS
bq24100RHLR
CIA
4.2 V
Stand-alone
bq24100RHLT
CIA
bq24103RHLR
CID
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
Stand-alone
bq24103RHLT
CID
bq24105RHLR
CIF
Externally programmable (2.1 V to 15.5 V)
Stand-alone
40C to 125C
bq24105RHLT
CIF
4.2 (Blinking status pins)
Stand-alone
bq24108RHLR
CIU
bq24113RHLR
CIJ
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
System-controlled
bq24113RHLT
CIJ
bq24115RHLR
CIL
Externally programmable (2.1 V to 15.5 V)
System-controlled
bq24115RHLT
CIL
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at
www.ti.com
.
(2)
The RHL package is available in the following options:
T - taped and reeled in quantities of 3,000 devices per reel
R - taped and reeled in quantities of 250 devices per reel
(3)
This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for
use in specified lead-free soldering processes.
2
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PACKAGE DISSIPATION RATINGS
ABSOLUTE MAXIMUM RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
bq24100, bq24103
bq24105, bq24108
bq24113, bq24115
SLUS606C JUNE 2004 REVISED SEPTEMBER 2005
T
A
< 40C
DERATING FACTOR
PACKAGE
JA
POWER RATING
ABOVE T
A
= 40C
RHL
(1)
46.87C/W
1.81 W
0.021 W/C
(1)
This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is
connected to the ground plane by a 2x3 via matrix.
over operating free-air temperature range (unless otherwise noted)
UNIT
Supply voltage range (with respect to V
SS
)
IN, VCC
20 V
STAT1, STAT2, PG, CE, CELLS, SNS, BAT
0.3 V to 20 V
OUT
0.7 V to 20 V
Input voltage range (with respect to V
SS
and PGND)
CMODE, TS, TTC
7 V
VTSB
3.6 V
ISET1, ISET2
3.3 V
Voltage difference between SNS and BAT inputs (V
SNS
- V
BAT
)
1 V
Output sink
STAT1, STAT2, PG
10 mA
Output current (average)
OUT
2.2 A
T
A
Operating free-air temperature range
40C to 85C
T
J
Junction temperature range
40C to 125C
T
stg
Storage temperature
65C to 150C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
MIN
NOM
MAX
UNIT
Supply voltage, V
CC
and IN (Tie together)
4.35
(1)
16.0
(2)
V
Operating junction temperature range, T
J
40
125
C
(1)
The IC continues to operate below V
min
, to 3.5 V, but the specifications are not tested and not guaranteed.
(2)
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the IN or OUT pins. A tight layout
minimizes switching noise.
T
J
= 0C to 125C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
V
CC
> V
CC(min)
, PWM switching
10
mA
I
VCC(VCC)
V
CC
supply current
V
CC
> V
CC(min)
, PWM NOT switching
5
V
CC
> V
CC(min)
, CE = HIGH
315
A
0C
T
J
65C, V
I(BAT)
= 4.2 V,
3.5
V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
Battery discharge sleep current, (SNS,
0C
T
J
65C, V
I(BAT)
= 8.4 V,
I
(SLP)
5.5
A
BAT, OUT, FB pins)
V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
0C
T
J
65C, V
I(BAT)
= 12.6 V,
7.7
V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
3
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V
IREG
+
1V
RSET1
1000,
V
IREG
*
PRE
+
0.1V
RSET2
1000,
bq24100, bq24103
bq24105, bq24108
bq24113, bq24115
SLUS606C JUNE 2004 REVISED SEPTEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0C to 125C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOLTAGE REGULATION
CELLS = Low, in voltage regulation
4.2
Output voltage, bq24103/13
V
OREG
CELLS = High, in voltage regulation
8.4
V
Output voltage, bq24100/08
Operating in voltage regulation
4.2
Feedback regulation REF for bq24105/15
V
IBAT
I
IBAT
= 25 nA typical into pin
2.1
V
only (W/FB)
T
A
= 25C
0.5%
0.5%
Voltage regulation accuracy
1%
1%
CURRENT REGULATION - FAST CHARGE
V
LOWV
V
I(BAT)
< V
OREG
,
I
OCHARGE
Output current range of converter
150
2000
mA
V
(VCC)
- V
I(BAT)
> V
(DO-MAX)
100 mV
V
IREG
200 mV,
V
IREG
Voltage regulated across R
(SNS)
Accuracy
10%
10%
Programmed Where
5 k
RSET1
10 k
, Select RSET1 to
program V
IREG
,
V
IREG(measured)
= I
OCHARGE
+ R
SNS
(10% to 10% excludes errors due to RSET1
and R
(SNS)
tolerances)
V
(LOWV)
V
I(BAT)
V
O(REG)
,
V
(ISET1)
Output current set voltage
1
V
V
(VCC)
V
I(BAT)
V(DO-MAX)
V
LOWV
V
I(BAT)
< V
O(REG)
,
K
(ISET1)
Output current set factor
1000
V/A
V
(VCC)
V
I(BAT)
+
V(DO-MAX)
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
Precharge to fast-charge transition voltage
V
LOWV
68
71.4
75
%V
O(REG)
threshold, BAT, bq24100/03/05/08 ICs only
Deglitch time for precharge to fast charge
Rising voltage;
t
20
30
40
ms
transition
t
RISE
, t
FALL
= 100 ns, 2-mV overdrive
I
OPRECHG
Precharge range
V
I(BAT)
< V
LOWV
, t < t
PRECHG
15
200
mA
V
(ISET2)
Precharge set voltage, ISET2
V
I(BAT)
< V
LOWV
, t < t
PRECHG
100
mV
K
(ISET2)
Precharge current set factor
1000
V/A
100 mV
V
IREG-PRE
100 mV,
V
IREG-PRE
Voltage regulated across R
SNS
-Accuracy
20%
20%
(PGM) Where
1.2 k
RSET2
10 k
, Select RSET1
to program V
IREG-PRE,
V
IREG-PRE
(Measured) = I
OPRE-CHG
R
SNS
(20% to 20% excludes errors due to RSET1
and R
SNS
tolerances)
CHARGE TERMINATION (CURRENT TAPER) DETECTION
I
TERM
Charge current termination detection range
V
I(BAT)
> V
RCH
15
200
mA
Charge termination detection set voltage,
V
TERM
V
I(BAT)
> V
RCH
100
mV
ISET2
K
(ISET2)
Termination current set factor
1000
V/A
Charger termination accuracy
V
I(BAT)
> V
RCH
20%
20%
Both rising and falling,
t
dg-TERM
Deglitch time for charge termination
20
30
40
ms
2-mV overdrive t
RISE
, t
FALL
= 100 ns
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
V
LTF
Cold temperature threshold, TS
72.8
73.5
74.2
V
HTF
Hot temperature threshold, TS
33.7
34.4
35.1
%V
O(VTSB)
V
TCO
Cutoff temperature threshold, TS
28.7
29.3
29.9
LTF hysteresis
0.5
1.0
1.5
4
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bq24100, bq24103
bq24105, bq24108
bq24113, bq24115
SLUS606C JUNE 2004 REVISED SEPTEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0C to 125C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Both rising and falling,
t
dg-TS
Deglitch time for temperature fault, TS
20
30
40
ms
2-mV overdrive t
RISE
, t
FALL
= 100 ns
V
CC
> V
IN(min)
,
V
O(VTSB)
TS bias output voltage
3.15
V
I
(VTSB)
= 10 mA 0.1 F
C
O(VTSB)
1 F
V
CC
>
IN(min)
,
V
O(VTSB)
TS bias voltage regulation accuracy
10%
10%
I
(VTSB)
= 10 mA 0.1 F
C
O(VTSB)
1 F
BATTERY RECHARGE THRESHOLD
V
RCH
Recharge threshold voltage
Below V
OREG
75
100
125
mV/cell
V
I(BAT)
< decreasing below threshold,
t
dg-RCH
Deglitch time
20
30
40
ms
t
FALL
= 100 ns 10-mV overdrive
STAT1, STAT2, AND PG OUTPUTS
V
OL(STATx)
Low-level output saturation voltage, STATx
I
O
= 5 mA
0.5
V
V
OL(PG)
Low-level output saturation voltage, PG
I
O
= 10 mA
0.1
CE CMODE, CELLS INPUTS
V
IL
Low-level input voltage
I
IL
= 5 A
0
0.4
V
V
IH
High-level input voltage
I
IH
= 20 A
1.3
V
CC
TTC INPUT
t
PRECHG
Precharge timer
1440
1800
2160
s
t
CHARGE
Programmable charge timer range
t
(CHG)
= C
(TTC)
K
(TTC)
25
572
minutes
Charge timer accuracy
0.01 F
C
(TTC)
0.18 F
-10%
10%
K
TTC
Timer multiplier
2.6
min/nF
C
TTC
Charge time capacitor range
0.01
0.22
F
V
TTC_EN
TTC enable threshold voltage
V
(TTC)
rising
200
mV
SLEEP COMPARATOR
V
CC
V
IBAT
V
CC
V
IBAT
2.3 V
V
I(OUT)
V
OREG,
for 1 or 2 cells
+5 mV
+75 mV
V
SLP-ENT
Sleep-mode entry threshold
V
V
I(OUT)
= 12.6 V, R
IN
= 1 k
V
CC
V
IBAT
V
CC
V
IBAT
bq24105/15
(1)
-4 mV
+73 mV
V
SLP-EXIT
Sleep-mode exit hysteresis,
2.3 V
V
I(OUT)
V
OREG
40
160
mV
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive,
5
s
PMOS turns off
t
dg-SLP
Deglitch time for sleep mode
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive,
20
30
40
ms
STATx pins turn off
UVLO
V
UVLO-ON
IC active threshold voltage
V
CC
rising
3.15
3.30
3.50
V
IC active hysteresis
V
CC
falling
120
150
mV
PWM
7 V
V
CC
V
CC(max)
400
Internal P-channel MOSFET on-resistance
4.5 V
V
CC
7 V
500
m
7 V
V
CC
V
CC(max)
130
Internal N-channel MOSFET on-resistance
4.5 V
V
CC
7 V
150
f
OSC
Oscillator frequency
1.1
MHz
Frequency accuracy
9%
9%
D
MAX
Maximum duty cycle
100%
D
MIN
Minimum duty cycle
0%
t
TOD
Switching delay time (turn on)
20
ns
t
syncmin
Minimum synchronous FET on time
60
ns
Synchronous FET minimum current-off
50
400
mA
threshold
(2)
(1)
For bq24105 and bq24115 only. R
IN
is connected between IN and PGND pins and needed to ensure sleep entry.
(2)
N-channel always turns on for ~60 ns and then turns off if current is too low.
5
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