ChipFind - документация

Электронный компонент: CD4070

Скачать:  PDF   ZIP
1
Data sheet acquired from Harris Semiconductor
SCHS055
Features
High-Voltage Types (20V Rating)
CD4070B - Quad Exclusive-OR Gate
CD4077B - Quad Exclusive-NOR Gate
Medium Speed Operation
- t
PHL
, t
PLH
= 65ns (Typ) at V
DD
= 10V, C
L
= 50pF
100% Tested for Quiescent Current at 20V
Standardized Symmetrical Output Characteristics
5V, 10V and 15V Parametric Ratings
Maximum Input Current of 1
A at 18V Over Full
Package Temperature Range
- 100nA at 18V and 25
o
C
Noise Margin (Over Full Package Temperature Range)
- 1V at V
DD
= 5V, 2V at V
DD
= 10V, 2.5V at V
DD
= 15V
Meets All Requirements of JEDEC Standard No. 13B,
"Standard Specifications for Description of `B' Series
CMOS Devices
Applications
Logical Comparators
Adders/Subtractors
Parity Generators and Checkers
Description
The Harris CD4070B contains four independent Exclusive-
OR gates. The Harris CD4077B contains four independent
Exclusive-NOR gates.
The CD4070B and CD4077B provide the system designer
with a means for direct implementation of the Exclusive-OR
and Exclusive-NOR functions, respectively.
Pinouts
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CD4070BE
-55 to 125
14 Ld PDIP
E14.3
CD4077BE
-55 to 125
14 Ld PDIP
E14.3
CD4070BF
-55 to 125
14 Ld CERDIP
F14.3
CD4077BF
-55 to 125
14 Ld CERDIP
F14.3
CD4070BM
-55 to 125
14 Ld SOIC
M14.15
CD4077BM
-55 to 125
14 Ld SOIC
M14.15
CD4070B
(PDIP, CERDIP, SOIC)
TOP VIEW
CD4077B
(PDIP, CERDIP, SOIC)
TOP VIEW
A
B
J = A
B
K = C
D
C
D
V
SS
V
DD
H
G
M = G
H
L = E
F
F
E
1
2
3
4
5
6
7
14
13
12
11
10
9
8
A
B
J = A
B
K = C
D
C
D
V
SS
V
DD
H
G
M = G
H
L = E
F
F
E
1
2
3
4
5
6
7
14
13
12
11
10
9
8
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1998
CD4070B,
CD4077B
CMOS Quad Exclusive-OR
and Exclusive-NOR Gate
File Number
910.1
[ /Title
(CD40
70B,
CD407
7B)
/Sub-
ject
(CMO
S Quad
Exclu-
sive-
OR
and
Exclu-
sive-
NOR
Gate)
/Autho
r ()
/Key-
words
(Har-
ris
Semi-
con-
ductor,
CD400
0,
metal
gate,
CMOS
, pdip,
cerdip,
mil,
January 1998
2
Functional Diagrams
CD4070B
CD4077B
A
B
C
D
E
F
G
H
1
2
5
6
8
9
12
13
3
4
10
11
J = A
B
K = C
D
M = G
H
L = E
F
V
SS
= 7
V
DD
= 14
J
K
L
M
A
B
C
D
E
F
G
H
1
2
5
6
8
9
12
13
3
4
10
11
J = A
B
K = C
D
M = G
H
L = E
F
J
K
L
M
FIGURE 1. SCHEMATIC DIAGRAM FOR CD4070B
(1 OF 4 IDENTICAL GATES)
CD4070B TRUTH TABLE (1 OF 4 GATES)
A
B
J
0
0
0
1
0
1
0
1
1
1
1
0
NOTE:
1 = High Level
0 = Low Level
J = A
B
V
DD
V
SS
V
SS
V
DD
V
DD
V
SS
V
SS
V
DD
p
n
p
n
p
n
p
p
n
p
n
J
3(4,10,11)
B
2(5,9,12)
A
1(6,8,13)
INPUTS PROTECTED
BY CMOS PROTECTION
NETWORK
FIGURE 2. SCHEMATIC DIAGRAM FOR CD4077B
(1 OF 4 IDENTICAL GATES)
CD4077B TRUTH TABLE (1 OF 4 GATES)
A
B
J
0
0
1
1
0
0
0
1
0
1
1
1
NOTE:
1 = High Level
0 = Low Level
J = A
B
V
DD
V
SS
V
SS
V
DD
V
DD
V
SS
V
SS
V
DD
p
n
p
n
p
n
p
n
p
n
J
3(4,10,11)
B
2(5,9,12)
A
1(6,8,13)
INPUTS PROTECTED
BY CMOS PROTECTION
NETWORK
n
CD4070B, CD4077B
3
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage Range (V
DD
) . . . . . . . . . . . . . . . . . -0.5V to 20V
Input Voltage Range, All Inputs . . . . . . . . . . . . . . -0.5V to V
DD
0.5V
DC Input Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Conditions
Temperature Range (T
A
) . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Supply Voltage Range (Typical) . . . . . . . . . . . . . . . . . . . . 3V to 18V
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
JC
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
90
N/A
CERDIP Package . . . . . . . . . . . . . . . .
95
38
SOIC Package . . . . . . . . . . . . . . . . . . .
175
N/A
Maximum Junction Temperature (Hermetic Package or Die)175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . .-65
o
C to 150
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications
PARAMETER
CONDITIONS
LIMITS AT INDICATED TEMPERATURES (
o
C)
UNITS
-55
-40
85
125
25
V
O
(V)
V
IN
(V)
V
DD
(V)
MIN
TYP
MAX
Quiescent Device Current
I
DD
Max
-
0, 5
5
0.25
0.25
7.5
7.5
-
0.01
0.25
A
-
0, 10
10
0.5
0.5
15
15
-
0.01
0.5
A
-
0, 15
15
1
1
30
30
-
0.01
1
A
-
0, 20
20
5
5
150
150
-
0.02
5
A
Output Low (Sink) Current
I
OL
Min
0.4
0, 5
5
0.64
0.61
0.42
0.36
0.51
1
-
mA
0.5
0, 10
10
1.6
1.5
1.1
0.9
1.3
2.6
-
mA
1.5
0, 15
15
4.2
4
2.8
2.4
3.4
6.8
-
mA
Output High (Source) Current
I
OH
Min
4.6
0, 5
5
-0.64
-0.61
-0.42
-0.36
-0.51
-1
-
mA
2.5
0, 5
5
-2
-1.8
-1.3
-1.15
-1.6
-3.2
-
mA
9.5
0, 10
10
-1.6
-1.5
-1.1
-0.9
-1.3
-2.6
-
mA
13.5
0, 15
15
-4.2
-4
-2.8
-2.4
-3.4
-6.8
-
mA
Output Voltage: Low Level,
V
OL
Max
-
0, 5
5
0.05
0.05
0.05
0.05
-
0
0.05
V
-
0, 10
10
0.05
0.05
0.05
0.05
-
0
0.05
V
-
0, 15
15
0.05
0.05
0.05
0.05
-
0
0.05
V
Output Voltage: High Level,
V
OH
Min
-
0, 5
5
4.95
4.95
4.95
4.95
4.95
5
-
V
-
0, 10
10
9.95
9.95
9.95
9.95
9.95
10
-
V
-
0, 15
15
14.95
14.95
14.95
14.95
14.95
15
-
V
Input Low Voltage,
V
IL
Max
0.5, 4.5
-
5
1.5
1.5
1.5
1.5
-
-
1.5
V
1, 9
-
10
3
3
3
3
-
-
3
V
1.5, 13.5
-
15
4
4
4
4
-
-
4
V
Input High Voltage,
V
IH
Min
0.5, 4.5
-
5
3.5
3.5
3.5
3.5
3.5
-
-
V
1, 9
-
10
7
7
7
7
7
-
-
V
1.5, 13.5
-
15
11
11
11
11
11
-
-
V
Input Current, I
IN
Max
-
0, 18
18
0.1
0.1
1
1
-
10
-5
0.1
A
CD4070B, CD4077B
4
AC Electrical Specifications
T
A
= 25
o
C, Input t
r
, t
f
= 20ns, C
L
= 50pF, R
L
= 200k
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS ON ALL TYPES
UNITS
V
DD
(V)
TYP
MAX
Propagation Delay Time
t
PHL
, t
PLH
5
140
280
ns
10
65
130
ns
15
50
100
ns
Transition Time
t
THL
, t
TLH
5
100
200
ns
10
50
100
ns
15
40
80
ns
Input Capacitance
C
IN
Any Input
5
7.5
pF
Typical Performance Curves
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
T
A
= 25
o
C
GATE TO SOURCE VOLTAGE (V
GS
) = 15V
10V
5V
30
25
20
15
10
5
0
0
5
10
15
I
OL
, OUTPUT LO
W (SINK) CURRENT (mA)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
GATE TO SOURCE VOLTAGE (V
GS
) = 15V
10V
5V
15
12.5
10
7.5
5
2.5
0
0
5
10
15
I
OL
, OUTPUT LO
W (SINK) CURRENT (mA)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
GATE TO SOURCE VOLTAGE (V
GS
) = -5V
-10V
-15V
-5
-10
-15
-20
-25
-30
0
0
-5
-10
-15
I
OH
, OUTPUT HIGH (SOURCE) CURRENT (mA)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
GATE TO SOURCE VOLTAGE (V
GS
) = -5V
-10V
-15V
-15
-10
-5
0
0
-5
-10
-15
I
OH
, OUTPUT HIGH (SINK) CURRENT (mA)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CD4070B, CD4077B
5
FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF LOAD CAPACITANCE
FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF SUPPLY VOLTAGE
FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF INPUT FREQUENCY
Typical Performance Curves
(Continued)
T
A
= 25
o
C
SUPPLY VOLTAGE (V
DD
) = 5V
10V
15V
200
150
100
50
0
0
20
40
60
t
THL
, t
TLH
, TRANSITION TIME (ns)
C
L
, LOAD CAPACITANCE (pF)
80
100
110
T
A
= 25
o
C
SUPPLY VOLTAGE (V
DD
) = 5V
10V
15V
300
200
100
0
0
20
40
60
t
PHL
, t
PLH
, PR
OP
A
G
A
TION DELA
Y TIME (ns)
C
L
, LOAD CAPACITANCE (pF)
80
100
T
A
= 25
o
C
300
200
100
0
0
5
10
15
t
PHL
, t
PLH
, PR
OP
A
G
A
TION DELA
Y TIME (ns)
V
DD
, SUPPLY VOLTAGE (V)
20
LOAD CAPACITANCE C
L
= 50pF
T
A
= 25
o
C
SUPPL
Y V
OL
TA
GE (V
DD
) = 15V
5V
10
3
10
2
10
1
10
-1
10
-1
1
10
10
2
P
D
, PO
WER DISSIP
A
TION (
W)
f
I
, INPUT FREQUENCY (kHz)
10
3
10
4
10
4
10
5
10V
C
L
= 50pF
C
L
= 15pF
10V
CD4070B, CD4077B