INA111
1
1992 Burr-Brown Corporation
PDS-1143E
Printed in U.S.A. March, 1998
INA111
A
1
A
2
A
3
(12)
(11)
6
(10)
10k
10k
25k
25k
10k
10k
(13)
7
(7)
4
(5)
3
(15)
8
(2)
1
(4)
2
V
IN
V
IN
R
G
V+
V
INA111
DIP
(SOIC)
Ref
Feedback
V
O
G = 1 +
50k
R
G
+
5
DIP Connected
Internally
High Speed FET-Input
INSTRUMENTATION AMPLIFIER
FEATURES
q
FET INPUT: I
B
= 20pA max
q
HIGH SPEED: T
S
= 4
s (G = 100, 0.01%)
q
LOW OFFSET VOLTAGE: 500
V max
q
LOW OFFSET VOLTAGE DRIFT:
5
V/
C max
q
HIGH COMMON-MODE REJECTION:
106dB min
q
8-PIN PLASTIC DIP, SOL-16 SOIC
APPLICATIONS
q
MEDICAL INSTRUMENTATION
q
DATA ACQUISITION
DESCRIPTION
The INA111 is a high speed, FET-input instrumenta-
tion amplifier offering excellent performance.
The INA111 uses a current-feedback topology provid-
ing extended bandwidth (2MHz at G = 10) and fast
settling time (4
s to 0.01% at G = 100). A single
external resistor sets any gain from 1 to over 1000.
Offset voltage and drift are laser trimmed for excellent
DC accuracy. The INA111's FET inputs reduce input
bias current to under 20pA, simplifying input filtering
and limiting circuitry.
The INA111 is available in 8-pin plastic DIP, and
SOL-16 surface-mount packages, specified for the
40
C to +85
C temperature range.
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
INA111
INA111
SBOS015
INA111
2
SPECIFICATIONS
ELECTRICAL
At T
A
= +25
C, V
S
=
15V, R
L
= 2k
, unless otherwise noted.
T
Specification same as INA111BP.
NOTE: (1) Temperature coefficient of the "50k
" term in the gain equation.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA111BP, BU
INA111AP, AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage, RTI
Initial
T
A
= +25
C
100
500/G
500
2000/G
200
500/G
1000
5000/G
V
vs Temperature
T
A
= T
MIN
to T
MAX
2
10/G
5
100/G
2
20/G
10
100/G
V/
C
vs Power Supply
V
S
=
6V to
18V
2 +10/G
30 + 100/G
T
T
V/V
Impedance, Differential
10
12
|| 6
T
|| pF
Common-Mode
10
12
|| 3
T
|| pF
Input Common-Mode Range
V
DIFF
= 0V
10
12
T
T
V
Common-Mode Rejection
V
CM
=
10V,
R
S
= 1k
G = 1
80
90
75
T
dB
G = 10
96
110
90
T
dB
G = 100
106
115
100
T
dB
G = 1000
106
115
100
T
dB
BIAS CURRENT
2
20
T
T
pA
OFFSET CURRENT
0.1
10
T
T
pA
NOISE VOLTAGE, RTI
G = 1000, R
S
= 0
f = 100Hz
13
T
nV/
Hz
f = 1kHz
10
T
nV/
Hz
f = 10kHz
10
T
nV/
Hz
f
B
= 0.1Hz to 10Hz
1
T
Vp-p
Noise Current
f = 10kHz
0.8
T
fA/
Hz
GAIN
Gain Equation
1 + (50k
/R
G
)
T
V/V
Range of Gain
1
10000
T
T
V/V
Gain Error
G = 1, R
L
= 10k
0.01
0.02
T
0.05
%
G = 10, R
L
= 10k
0.1
0.5
T
T
%
G = 100, R
L
= 10k
0.15
0.5
T
0.7
%
G = 1000, R
L
= 10k
0.25
1
T
2
%
Gain vs Temperature
G = 1
1
10
T
T
ppm/
C
50k
Resistance
(1)
25
100
T
T
ppm/
C
Nonlinearity
G = 1
0.0005
0.005
T
T
% of FSR
G = 10
0.001
0.005
T
0.01
% of FSR
G = 100
0.001
0.005
T
0.01
% of FSR
G = 1000
0.005
0.02
T
0.04
% of FSR
OUTPUT
Voltage
I
O
= 5mA, T
MIN
to T
MAX
11
12.7
T
T
V
Load Capacitance Stability
1000
T
pF
Short Circuit Current
+30/25
T
mA
FREQUENCY RESPONSE
Bandwidth, 3dB
G = 1
2
T
MHz
G = 10
2
T
MHz
G = 100
450
T
kHz
G = 1000
50
T
kHz
Slew Rate
V
O
=
10V, G = 2 to 100
17
T
V/
s
Settling Time, 0.01%
G = 1
2
T
s
G = 10
2
T
s
G = 100
4
T
s
G = 1000
30
T
s
Overload Recovery
50% Overdrive
1
T
s
POWER SUPPLY
Voltage Range
6
15
18
T
T
T
V
Current
V
IN
= 0V
3.3
4.5
T
T
mA
TEMPERATURE RANGE
Specification
40
85
T
T
C
Operating
40
125
T
T
C
JA
100
T
C/W
INA111
3
PIN CONFIGURATIONS
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
Top View
DIP
Top View
SOL-16 Surface Mount
NC
R
G
NC
V
IN
V
+
IN
NC
V
NC
NC
R
G
NC
V+
Feedback
V
O
Ref
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
R
G
V
IN
V
+
IN
V
R
G
V+
V
O
Ref
1
2
3
4
8
7
6
5
ORDERING INFORMATION
PRODUCT
PACKAGE
TEMPERATURE RANGE
INA111AP
8-Pin Plastic DIP
40
C to +85
C
INA111BP
8-Pin Plastic DIP
40
C to +85
C
INA111AU
SOL-16 Surface-Mount
40
C to +85
C
INA111BU
SOL-16 Surface-Mount
40
C to +85
C
Supply Voltage ..................................................................................
18V
Input Voltage Range .......................................... (V) 0.7V to (V+) +15V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. 40
C to +125
C
Storage Temperature ..................................................... 40
C to +125
C
Junction Temperature .................................................................... +150
C
Lead Temperature (soldering, 10s) ............................................... +300
C
NOTE: Stresses above these ratings may cause permanent damage.
ABSOLUTE MAXIMUM RATINGS
(1)
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT
PACKAGE
NUMBER
(1)
INA111AP
8-Pin Plastic DIP
006
INA111BP
8-Pin Plastic DIP
006
INA111AU
16-Pin Surface Mount
211
INA111BU
16-Pin Surface Mount
211
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
INA111
4
SETTLING TIME vs GAIN
100
10
1
1
10
100
1000
Gain (V/V)
Settling Time (s)
0.01%
0.1%
POWER SUPPLY REJECTION vs FREQUENCY
Frequency (Hz)
Power Supply Rejection (dB)
120
100
80
60
40
20
0
10
100
1k
10k
100k
1M
G = 1k
G = 100
G = 10
G = 1
INPUT COMMON-MODE VOLTAGE RANGE
vs OUTPUT VOLTAGE
Output Voltage (V)
Common-Mode Voltage (V)
15
10
0
5
15
5
15
10
5
0
5
10
15
10
Limited by A
1
+ Output Swing
A
3
Output
Swing Limit
A
3
+ Output
Swing Limit
Limited by A
2
Output Swing
Limited by A
1
Output Swing
Limited by A
2
+ Output Swing
V
D/2
+
+
V
CM
V
O
(Any Gain)
V
D/2
COMMON-MODE REJECTION vs FREQUENCY
Frequency (Hz)
Common-Mode Rejection (dB)
120
100
80
60
40
20
0
10
100
1k
10k
100k
1M
G = 1k
G = 100
G = 10
G = 1
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V
S
=
15V, unless otherwise noted.
GAIN vs FREQUENCY
Gain (V/V)
Frequency (Hz)
10k
1k
100
10
1
0.1
1k
10k
100k
1M
10M
G = 1k
G = 100
G = 10
G = 1
INPUT-REFERRED NOISE VOLTAGE vs FREQUENCY
Frequency (Hz)
1k
100
10
1
1
10
100
1k
10k
Input-Referred Noise Voltage (nV/
Hz)
G = 1
G = 10
G = 100, 1k
INA111
5
OUTPUT CURRENT LIMIT vs TEMPERATURE
50
40
30
20
10
0
75
50
25
0
25
50
75
100
125
Temperature (C)
Short-Circuit Current (mA)
I
CL
+I
CL
MAXIMUM OUTPUT VOLTAGE SWING vs FREQUENCY
30
25
20
15
10
5
0
1k
10k
100k
1M
10M
Frequency (Hz)
Peak-to-Peak Amplitude (V)
15.7V
+15.7V
INPUT BIAS CURRENT
vs COMMON-MODE INPUT VOLTAGE
Common-Mode Voltage (V)
10m
1m
100
10
+1p
+10p
Input Bias Current (A)
20
15
10
5
0
5
10
15
20
G = 100
G = 10
G = 1k
G = 1
G = 1
G = 100
G = 10
G = 1k
+15.7V
15.7V
INPUT BIAS CURRENT
vs DIFFERENTIAL INPUT VOLTAGE
10m
1m
100
10
+1p
+10p
+100p
20
15
10
5
0
5
10
15
20
Differential Overload Voltage (V)
NOTE: One input grounded.
Input Bias Current (A)
OFFSET VOLTAGE WARM-UP vs TIME
75
50
25
0
25
50
75
G = 1
Referred-to-Input V
OS
Change (V)
300
200
100
0
100
200
300
Referred-to-Input V
OS
Change (V)
Time From Power Supply Turn-On (Minutes)
0
1
2
3
4
5
G
10
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, V
S
=
15V, unless otherwise noted.
INPUT BIAS CURRENT vs TEMPERATURE
10n
1n
100p
10p
1p
0.1p
0.01p
Input Bias Current (A)
75
50
25
0
25
50
75
100
125
Temperature (C)
I
OS
I
b
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