TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
Copyright
1991, Texas Instruments Incorporated
2-1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
High-Resolution, Solid-State Image Sensor
for NTSC Color TV Applications
8-mm Image-Area Diagonal, Compatible
With 1/2" Vidicon Optics
755 (H) x 242 (V) Active Elements in
Image-Sensing Area
Advanced On-Chip Signal Processing
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 70 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Separate Outputs for Each Color (RGB)
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
description
The TC244 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip color
NTSC TV applications. The device is intended to replace the 1/2-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC244 is configured into 242 lines with 786 elements in each line. Twenty-nine
elements are provided in each line for dark reference. The blooming protection incorporated into the sensor is
based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is
activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing
element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The single-chip color-sensing capability of the TC244 is achieved
by laminating a striped color filter with RGB organization on top of the image-sensing area. The stripes are
precisely aligned to the sensing elements, and the signal charge columns are multiplexed during the readout
into three separate registers with three separate outputs corresponding to each individual color.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
SUB 1
IAG 2
ABG 3
ADB 4
OUT3 (B) 5
OUT2 (G) 6
OUT1 (R) 7
AMP GND 8
CDB 9
SUB 10
20 SUB
19 IAG
18 ABG
17 SAG
16 SRG3
15 SRG2
14 SRG1
13 NC
12 TRG
11 IDB
DUAL-IN-LINE PACKAGE
(TOP VIEW)
NC No internal connection
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated
clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC244 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking.
The TC244 is characterized for operation from 10
C to 45
C.
functional block diagram
Dark Reference Elements
Clearing Drain
Amplifiers
OUT2 (G)
OUT3 (B)
ADB
ABG
IAG
2
3
4
5
6
7
OUT1 (R)
8
AMP GND
CDB
9
SRG3
SRG2
SRG1
TRG
IDB
12
14
15
16
SAG
17
ABG
IAG
18
19
Storage Area
Blooming Protection
Image Area With
Top Drain
11 Dummy
Elements
Gates, and Serial Registers
Multiplexer, Transfer
11
detailed description
The TC244 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing
amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional
block diagram.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
sensor topology diagram
1
1/2
244
755 + 1/2 + 1/2
Effective Imaging Area
1
29 + 1/2
2 Lines
Reverse Transfer
Reverse Transfer
252
252
251 + 1/2 + 1/2
10
10
9.5
11
11
11.5
Dummy Pixels
OPB
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
I/O
DESCRIPTION
ABG
3
I
Antiblooming gate
ABG
18
I
Antiblooming gate
ADB
4
I
Supply voltage for amplifier drain bias
AMP GND
8
Amplifier ground
CDB
9
I
Supply voltage for clearing drain bias
IAG
2
I
Image-area gate
IAG
19
I
Image-area gate
IDB
11
I
Supply voltage for input diode bias
OUT1 (R)
7
O
Output signal 1
OUT2 (G)
6
O
Output signal 2
OUT3 (B)
5
O
Output signal 3
SAG
17
I
Storage-area gate
SRG1
14
I
Serial-register gate 1
SRG2
15
I
Serial-register gate 2
SRG3
16
I
Serial-register gate 3
SUB
1
Substrate and clock return
SUB
10
Substrate and clock return
SUB
20
Substrate and clock return
TRG
12
I
Transfer gate
All pins of the same name should be connected together externally.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
image-sensing and storage areas
Figure 1 and Figure 2 show cross sections with potential well diagrams and top views of image-sensing and
storage-area elements. As light enters the silicon in the image-sensing area, free electrons are generated and
collected in the potential wells of the sensing elements. During this time, blooming protection is activated by
applying a burst of pulses to the antiblooming gate inputs every horizontal blanking interval. This prevents
blooming caused by the spilling of charge from overexposed elements into neighboring elements. After
integration is complete, the signal charge is transferred into the storage area.
There are 29 full columns and one half-column of elements at the right edge of the image-sensing area that are
shielded from incident light; these elements provide the dark reference used in subsequent video processing
circuits to restore the video black level. There are also one full column and one half-column of light-shielded
elements at the left edge of the image-sensing area and two lines of light-shielded elements between the
image-sensing and image-storage areas (the latter prevent charge leakage from the image-sensing area into
the image-storage area).
multiplexer with transfer gates and serial registers
The color sensitivity of the TC244 is obtained by laminating a color stripe filter on top of the image-sensing area
and aligning it precisely with vertical columns of sensing elements. This separates columns into three groups
corresponding to the RGB colors used in the filter. The function of the multiplexer and transfer gates is to transfer
the charge line by line from the columns into the corresponding serial registers and prepare it for readout.
Figure 3 illustrates the layout of the multiplexing gate that vertically separates the pixels for input into the serial
registers. Figure 4 shows the layout of the interface region between the serial-register gates and the transfer
gates. The multiplexing is activated during the horizontal blanking interval by applying appropriate pulses to the
transfer gates and serial registers. The required pulse timing is shown in Figure 5. A drain has also been
included in this area to provide the capability to quickly clear the image-sensing and storage areas of unwanted
charge. Such charge can accumulate in the imager during the start-up of operation or under special
circumstances when nonstandard TV operation is desired.
correlated clamp-sample-and-hold amplifier with charge-detection nodes
Figure 6 illustrates the correlated clamp-sample-and-hold amplifier circuit. Charge is converted into a video
signal by transferring the charge onto a floating diffusion structure in detection node1 that is connected to the
gate of MOS transistor Q1. The proportional charge-induced signal is then processed by the circuit shown in
Figure 6. This circuit consists of a low-pass filter formed by Q1 and C2, coupling capacitor C1, dummy detection
node 2, which restores the dc bias on the gate of Q3, sampling transistor Q5, holding capacitor C3, and output
buffer Q6. Transistors Q2, Q4, and Q7 are current sources for each corresponding stage of the amplifier. The
parameters of this high-performance signal-processing amplifier have been optimized to minimize noise and
maximize the video signal.
The signal processing begins with a reset of detection node 1 and restoration of the dc bias on the gate of Q3
through the clamping function of dummy detection node 2. After the clamping is completed, the new charge
packet is transferred onto detection node 1. The resulting signal is sampled by the sampling transistor Q5 and
is stored on the holding capacitor C3. This process is repeated periodically and is correlated to the charge
transfer in the registers. The correlation is achieved automatically since the same clock lines used in registers
-S2 and
-S3 for charge transport serve for reset and sample. The multiple use of the clock lines significantly
reduces the number of signals required to operate the sensor. The amplifier also contains an internal voltage
reference generator that provides the reference bias for the reset and clamp transistors. The detection nodes
and the corresponding amplifiers are located some distance away from the edge of the storage area. Therefore,
eleven dummy elements are incorporated at the end of each serial register to span the distance. The location
of the dummy elements, which are considered to be part of the amplifiers, is shown in the functional block
diagram.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
-ABG
-IAG
8.5
m(H)
Clocked Barrier
Virtual Barrier
Antiblooming Gate
Virtual Well
Clocked Well
Light
Antiblooming
Clocking Levels
Accumulated Charge
19.75
m(V)
Figure 1. Charge-Accumulation Process
-PS
Channel Stops
Virtual Phase
Clocked Phase
Figure 2. Charge-Transfer Process
Gate
Multiplexing
Stop
Channel
Well
Clocked
Well
Virtual
Gate
Transfer
Serial-Register
Gates
Wells
Clocked
Channel Stops
Figure 3. Multiplexing-Gate Layout
Figure 4. Interface-Region Layout
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Composite
Blanking
SRG3
SRG2
SRG 1
TRG
SAG
IAG
ABG
Blanking Interval
Horizontal
Expanded
Figure 5. Timing Diagram
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
ADB
SRG1
Reset Gate
and
Output
Diode
Detection Node 1
CCD Register
Virtual
Gate
Clocked
Gate
Reference Generator
VO
Q7
Q6
C3
Q5
Q4
Q3
Detection
Node 2
C2
C1
Q2
Q1
SRG2
SRG3
Figure 6. Correlated Clamp-Sample-and-Hold Amplifier Circuit Diagram
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
spurious nonuniformity specification
The spurious nonuniformity specification of the TC244 CCD grades 10, 20, 30, and 40 is based on several
sensor characteristics:
Amplitude of the nonuniform pixel
Polarity of the nonuniform pixel
Black
White
Location of the nonuniformity (see Figure 7)
Area A
Element columns near horizontal center of the area
Element rows near vertical center of the area
Area B
Up to the pixel or line border
Up to area A
Other
Edge of the imager
Up to area B
Nonuniform pixel count
Distance between nonuniform pixels
Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 8. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 9.
B
A
20 Pixels
Lines
11
18 Pixels
Lines
7
377
Pixels
Lines
233
Figure 7. Sensor Area Map
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
mV
Amplitude
t
Illumination
% of Total
t
Figure 8. Pixel Nonuniformity,
Figure 9. Pixel Nonuniformity,
Dark Condition
Illuminated Condition
The grade specification for the TC244 is as follows (CCD video-output signal is 50 mV
10 mV):
Pixel nonuniformity:
DARK CONDITION
ILLUMINATED CONDITION
DISTANCE
PART
NONUNIFORM PIXEL TYPE
TOTAL
SEPARATION
PART
NUMBER
PIXEL
AMPLITUDE x
WHITE
BLACK
W/B
% OF TOTAL
AREA A
AREA B
TOTAL
COUNT
NUMBER
AMPLITUDE, x
(mV)
AREA
AREA
AREA
ILLUMINATION
AREA A
AREA B
COUNT
X
Y
AREA
(
)
A
B
A
B
A
B
TC244-20
x > 3.5
0
0
0
0
0
0
x > 5
0
0
--
--
--
--
TC244-30
2.5 < x
3.5
2
5
2
5
2
5
5.0 < x
7.5
2
5
12
100
80
A
TC244-30
x > 3.5
0
0
0
0
0
0
x > 7.5
0
0
12
100
80
A
TC244 40
3.5 < x
7
3
7
3
7
3
7
7.5 < x
15
3
7
15
TC244-40
x > 7
0
0
0
0
0
0
x > 15
0
0
15
--
--
--
White and black nonuniform pixel pair
The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black
pixels in the illuminated condition. The sum of all nonuniform combinations will not exceed the total count.
Column nonuniformity:
PART
COLUMN
AMPLITUDE x
WHITE
BLACK
PART
NUMBER
AMPLITUDE, x
(mV)
AREAS
AREAS
NUMBER
(mV)
A AND B
A AND B
TC244-20
x > 0.3
0
0
TC244-30
x > 0.5
0
0
TC244-40
x > 0.7
0
0
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range for ADB, CDB, IDB (see Note 1)
0 V to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range for ABG, IAG, SAG, SRG, TRG
15 V to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
30
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
30
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, ADB
11
12
13
V
Substrate bias voltage
0
V
High level
1.5
2
2.5
IAG
Intermediate level
5.7
Low level
11
9
SRG1 SRG2 SRG3
High level
1.5
2
2.5
SRG1, SRG2, SRG3
Low level
11
9
Input voltage V
High level
2
4
6
V
Input voltage, VI
ABG
Intermediate level
2.3
V
Low level
7.5
7
6.5
SAG
High level
1.5
2
2.5
SAG
Low level
11
9
TRG
High level
1.5
2
2.5
TRG
Low level
11
9
IAG, SAG
3.58
Clock frequency, fclock
SRG1, SRG2, SRG3, TRG
4.77
MHz
ABG
2
Capacitive load
OUT1 (R), OUT2 (G), OUT3 (B)
6
pF
Operating free-air temperature, TA
10
45
C
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
Adjustment is required for optimal performance.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating range of supply voltage, T
A
= 10
C to 45
C
PARAMETER
MIN
TYP
MAX
UNIT
Dynamic range (see Note 2)
Antiblooming disabled (see Note 3)
60
70
dB
Charge conversion factor
3.8
4
4.2
V/e
Charge transfer efficiency (see Note 4)
0.99990
0.99995
1
Signal response delay time,
(see Note 5 and Figure 13)
18
20
22
ns
Gamma (see Note 6)
0.97
0.98
0.99
Output resistance
700
800
Noise voltage
1/f noise (5 kHz)
0.1
V/
Hz
Noise voltage
Random noise (f = 100 kHz)
0.08
V/
Hz
Noise equivalent signal
30
electrons
ADB (see Note 7)
20
Rejection ratio at 4.77 MHz
SRG1, SRG2, SRG3 (see Note 8)
40
dB
ABG (see Note 9)
20
Supply current
5
mA
IAG
6500
SRG1, SRG2, SRG3
68
Input capacitance, Ci
ABG
2400
pF
TRG
180
SAG
6800
All typical values are at TA = 25
C
NOTES:
2. Dynamic range is 20 times the logarithm of the mean noise signal divided by the saturation output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.
6. Gamma (
) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this
value represents points near saturation):
Exposure (2)
Exposure (1)
g
+
Output signal (2)
Output signal (1)
7. ADB rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
optical characteristics, T
A
= 40
C
, integration time = 16.67 ms (unless otherwise noted
)
PARAMETER
MIN
TYP
MAX
UNIT
Red
160
mV/lx
Sensitivity
Green
See Notes 10 and 11
90
% of red
Blue
60
% of red
Saturation signal, Vsat (see Note 12)
Antiblooming disabled, interlace off
320
mV
Maximum usable signal, Vuse
Antiblooming enabled, interlace on
180
mV
Blooming overload ratio (see Note 13)
Interlace on
100
Blooming overload ratio (see Note 13)
Interlace off
200
Image-area well capacity
80 x 103
electrons
Smear (see Note 14)
See Note 15
0.0004
Dark current
Interlace off
TA = 21
C
0.027
nA/cm2
Dark signal (see Note 16)
TA = 45
C
TC244-30
5.5
mV
Dark signal (see Note 16)
TA = 45
C
TC244-40
6
mV
Pixel uniformity
Output signal = 50 mV
10 mV
TC244-30
3.5
mV
Pixel uniformity
Output signal = 50 mV
10 mV
TC244-40
5
mV
Column uniformity
Output signal = 50 mV
10 mV
TC244-30
0.5
mV
Column uniformity
Output signal = 50 mV
10 mV
TC244-40
0.7
mV
Shading
Output signal = 100 mV
15%
NOTES: 10. The following standard imaging condition is used in the test: light box SA702 (made by Canon) is used with a lens (FL = 92 mm)
stopped to f14.3. The light power is 1.5
W/cm2 (color temperature = 3000 K). No IR filter is used.
11. The following measurement method is used: the device blooming protection is disabled by lowering the ABG-clock-pulse amplitude
to the minimum value. The red output signal level (Sr), the blue output signal level (Sb), and the green output signal level (Sg) are
recorded. The relative sensitivity for the blue output signal (Rb) and the relative sensitivity for the green output signal (Rg) are
determined as follows:
Rb = Sb/Sr and Rg = Sg/Sr
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image-area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms, the fast dump-clocking rate during vertical timing is 3.58 MHz, and the illuminated section is 1/10 of the
height of the image section.
16. Dark-signal level is measured from the dummy pixels.
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
DR (dynamic range)
+
camera white clip voltage
V
n
Vn = noise floor voltage
Vsat (min) = minimum saturation voltage
Vuse (max) = maximum usable voltage
Vuse (typ) = typical user voltage (camera white clip)
(light input)
Lux
Enabled
With Antiblooming
Blooming Point
Well Capacity
Dependent On
Disabled
With Antiblooming
Blooming Point
Gate High Level
Upon Antiblooming
Level Dependent
DR
Vn
Vsat (min)
Vuse (typ)
Vuse (max)
VO
NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max).
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ),
the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
Figure 10. Typical V
sat
, V
use
Relationship
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Slew rate between 10% and 90% = 70 to 120 V/
s, tr = 150 ns, tf = 90 ns.
tf
tr
0%
VIL max
10%
Intermediate Level
VIH min
90%
100%
Figure 11. Typical Clock Waveform for IAG, ABG and SAG
Slew rate between 10% and 90% = 300 V/
s, tr = tf = 15 ns.
tf
tr
0%
VIL max
10%
VIH min
90%
100%
Figure 12. Typical Clock Waveform for SRG and TRG
Hold
and
Sample
100%
90%
OUT
SRG
9 V
0%
9 V to 11 V
1.5 V to 2.5 V
CCD Delay
15 ns
10 ns
Figure 13. SRG and OUT Waveforms
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.01
0.001
1
0.1
700
800
900
Responsivity
A/W
Incident Wavelength nm
CCD SPECTRAL RESPONSIVITY
400
500
600
1000 1100
VADB = 12 V, TA = 25
C
No IR Filter
Light Power = 1.5
W/cm2
Light Box: Canon SA702
Quantum Efficiency %
100
60
50
40
30
20
10
5
3
2
300
G
B
R
Figure 14
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
Image Sensor
4.7
F
+
+
+
+
15 pF
14.3-MHz
Oscillator
20 pF
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
33
32
31
30
29
28
27
26
25
24
23
V
CC
12
13
14
15
16
17
18
19
20
21
22
10 OUT1(R)
11 OUT2(G)
16
15
14
13
12 OUT3(B)
1
2
3
4
5
6
7
8
ADB
10
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
V
ABG
ABLVL
V
Parallel Driver
IALVL
V
SS
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
9
8
7
6
5
4
3
2
1
11
12
13
14
15
16
17
18
19
22 k
47 k
4.7
F
4.7
F
4.7
F
100
100
100
9
ADB
VCC
VSS
V
ABLVL
IALVL
VABG +
VABG
12 V
5 V
10 V
2 V
2.5 V
5 V
4 V
6 V
DC VOLTAGES
IALVL
I/N
IAIN
ABIN
MIDSEL
SAIN
PD
GND
V
ABG+
IASR
ABSR
V
CC
ABLVL
IAOUT
ABOUT
SAOUT
V
CC
V
ABG
10
V
SS
V
SS
20
10
20
SEL0OUT
GND
PD
SRG3IN
SRG2IN
SRG1IN
TRGIN
NC
SEL1OUT
SEL0
NC
V
CC
SRG3OUT
SRG2OUT
SRG1OUT
TRGOUT
V
CC
SEL1
V
SS
V
SS
V
ABG+
Serial Driver
SUB
IAG
ABG
SAG
SRG3
SRG2
SEG1
NC
TRG
IDB
SUB
IAG
ABG
ADB
OUT3 (B)
OUT2 (G)
OUT1 (R)
GND
CDB
SUB
ANLG V
CC
AIN1
CIN1
AIN2
CIN2
AIN3
CIN3
ANLG GND
Sample-and-Hold
S/H1
S/H2
S/H3
DIG V
CC
OUT1
OUT2
OUT3
DGTL GND
V
CC
ABS1
ABS0
SC(90)
SC
BF
CBLK
CSYNC
CP1
CP2
BCP2
BCP1
T
S1
S2
S3
PD
PS
GT
ABIN
PI
MODE
GND
V
CC
V
CC
HIGH
GPS
SB
GP
VD
VD2
WHT
A
VGA
TE
HGA
TE
CLK2M
VCC
FI
E/L
VDS
HCR
VCR
GT2
GT1/SH3
GT3/SH2
SH1
X2
X1
SN28835
NTSC Timer
TMS3473B
SN28846
TC244
TL1593
SUPPORT CIRCUITS
DEVICE
PACKAGE
APPLICATION
FUNCTION
SN28835FS
44 pin flatpack
Timing generator
NTSC timing generator (CCD, S/H, processing)
SN28846DW
20 pin small outline
Serial driver
Driver for TRG, SRG1, SRG2, SRG3
TMS3473BDW
20 pin small outline
Parallel driver
Driver for IAG, SAG, ABG
TL1593CNS
16 pin small outline (EIAJ)
Sample and hold
Three-channel sample-and-hold IC
Figure 15. Typical Application Circuit Diagram
TC244
786-
488-PIXEL CCD IMAGE SENSOR
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
The package for the TC244 consists of a ceramic base, a glass window, a color filter, and a 20-lead frame. The glass
window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line
organization and fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings.
0,33 (0.013)
0,17 (0.007)
1,65 (0.065)
1,91 (0.075)
0,41 (0.016)
0,51 (0.020)
3,90 (0.154)
5,50 (0.217)
0,76 (0.030)
1,78 (0.070)
Rotation
90
7,20 (0.283)
7,60 (0.299)
Center
Package
Center
Optical
15,44 (0.608)
15,64 (0.616)
MAX
18,30 (0.720)
13,87 (0.546)
13,67 (0.538)
4,01 (0.158) MAX
15,54 (0.612)
14,94 (0.588)
1,70 (0.067)
1,10 (0.043)
Focus
Plane
6,50 (0.256)
6,10 (0.240)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
TC244 (20 pin)
Index
Mark
7/94
15,14 (0.596)
14,84(0.584)
3,38 (0.133)
2,72 (0.107)
NOTES: A. The center of the package and the center of image area not coincident.
B. The distance from the top of the glass to the image sensor surface is typically 1 mm (0.04 inch). The glass is 0.95
0.08 mm thick
and has an index of refraction of 1.53.
C. Each pin centerline is located within 0.18 mm of its true longitudinal position.
D. The color filter is 0.50
0.08 mm thick and has an index of refraction of 1.487.
E. Maximum rotation of the sensor within the package is 1.5
.
SOCS016B NOVEMBER 1989 REVISED DECEMBER 1991
2-18
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL
APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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In order to minimize risks associated with the customer's applications, adequate design and operating
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Copyright
1998, Texas Instruments Incorporated
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