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TLC271, TLC271A, TLC271B
LinCMOS
TM
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090C NOVEMBER 1987 REVISED AUGUST 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Input Offset Voltage Drift . . . Typically
0.1
V/Month, Including the First 30 Days
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
0
C to 70
C . . . 3 V to 16 V
40
C to 85
C . . . 4 V to 16 V
55
C to 125
C . . . 5 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
D
Low Noise . . . 25 nV/
Hz Typically at
f = 1 kHz (High-Bias Mode)
D
Output Voltage Range includes Negative
Rail
D
High Input Impedance . . . 10
12
Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also
Available in Tape and Reel
D
Designed-In Latch-Up Immunity
description
The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS
TM
technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
PACKAGE
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
0
C
2 mV
TLC271BCD
TLC271BCP
0 C
to
2 mV
5 mV
TLC271BCD
TLC271ACD
--
--
TLC271BCP
TLC271ACP
70
C
10 mV
TLC271CD
TLC271CP
40
C
2 mV
TLC271BID
TLC271BIP
40 C
to
2 mV
5 mV
TLC271BID
TLC271AID
--
--
TLC271BIP
TLC271AIP
85
C
10 mV
TLC271ID
TLC271IP
55
C
to
125
C
10 mV
TLC271MD
TLC271MFK
TLC271MJG
TLC271MP
The D package is available taped and reeled. Add R suffix to the device type (e.g.,
TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
OFFSET N1
IN
IN +
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D, JG, OR P PACKAGE
(TOP VIEW)
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
V
DD
NC
OUT
NC
NC
IN
NC
IN +
NC
FK PACKAGE
(TOP VIEW)
NC
OFFSET
N1
NC
NC
NC
NC
GND
NC
NC No internal connection
OFFSET
N2
BIAS SELECT
LinCMOS is a trademark of Texas Instruments Incorporated.
TLC271, TLC271A, TLC271B
LinCMOS
TM
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090C NOVEMBER 1987 REVISED AUGUST 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
8DEVICE FEATURES
PARAMETER
BIAS-SELECT MODE
UNIT
PARAMETER
HIGH
MEDIUM
LOW
UNIT
PD
3375
525
50
W
SR
3.6
0.4
0.03
V/
s
Vn
25
32
68
nV/
Hz
B1
1.7
0.5
0.09
MHz
AVD
23
170
480
V/mV
Typical at VDD = 5 V, TA = 25
C
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS
TM
operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand 100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0
C to 70
C. The I-suffix devices are characterized
for operation from 40
C to 85
C. The M-suffix devices are characterized for operation over the full military
temperature range of 55
C to 125
C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
TLC271, TLC271A, TLC271B
LinCMOS
TM
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090C NOVEMBER 1987 REVISED AUGUST 1997
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
bias-select feature (continued)
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUES
MODE
TYPICAL PARAMETER VALUES
TA = 25
C, VDD = 5 V
HIGH BIAS
MEDIUM BIAS
LOW BIAS
UNIT
TA = 25 C, VDD = 5 V
RL = 10 k
RL = 100 k
RL = 1 M
PD
Power dissipation
3.4
0.5
0.05
mW
SR
Slew rate
3.6
0.4
0.03
V/
s
Vn
Equivalent input noise voltage at f = 1 kHz
25
32
68
nV/
Hz
B1
Unity-gain bandwidth
1.7
0.5
0.09
MHz
m
Phase margin
46
40
34
AVD
Large-signal differential voltage amplification
23
170
480
V/mV
bias selection
Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within
the voltages specified in Figure 1.
bias selection (continued)
VDD
1 M
1 M
0.01
F
Low
Medium
High
To the Bias
Select Pin
BIAS MODE
BIAS-SELECT VOLTAGE
(single supply)
Low
Medium
High
VDD
1 V to VDD 1 V
GND
Figure 1. Bias Selection for Single-Supply Applications
high-bias mode
In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain
bandwidth is typically greater than 1 MHz.
medium-bias mode
The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.
TLC271, TLC271A, TLC271B
LinCMOS
TM
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090C NOVEMBER 1987 REVISED AUGUST 1997
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
low-bias mode
In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC
BIAS MODE
schematic
all
absolute maximum ratings
all
recommended operating conditions
all
electrical characteristics
operating characteristics
typical characteristics
high
(Figures 2 33)
electrical characteristics
operating characteristics
typical characteristics
medium
(Figures 34 65)
electrical characteristics
operating characteristics
typical characteristics
low
(Figures 66 97)
parameter measurement information
all
application information
all
equivalent schematic
P3
P1
R1
IN
IN +
P2
R2
P4
R6
N5
R5
C1
N3
N2
N1
R3
D1
R4
D2
N4
OFFSET
N1
N2
OFFSET
OUT
GND
R7
N6
BIAS
SELECT
N10
N7
N9
N13
N12
N11
P12
P11
P10
P7A
P8
P9A
P9B
P7B
P6B
P6A
P5
VDD
TLC271, TLC271A, TLC271B
LinCMOS
TM
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090C NOVEMBER 1987 REVISED AUGUST 1997
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input)
0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
5 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25
C (see Note 3)
Unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, T
A
: C suffix
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix
40
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M suffix
55
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case temperature for 60 seconds: FK package
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package
260
C
. . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package
300
C
. . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN .
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
C
TA = 70
C
POWER RATING
TA = 85
C
POWER RATING
TA = 125
C
POWER RATING
D
725 mW
5.8 mW/
C
464 mW
377 mW
145 mW
FK
1375 mW
11.0 mW/
C
880 mW
715 mW
275 mW
JG
1050 mW
8.4 mW/
C
672 mW
546 mW
210 mW
P
1000 mW
8.0 mW/
C
640 mW
520 mW
200 mW
recommended operating conditions
C SUFFIX
I SUFFIX
M SUFFIX
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
Supply voltage, VDD
3
16
4
16
5
16
V
Common mode input voltage VIC
VDD = 5 V
0.2
3.5
0.2
3.5
0
3.5
V
Common-mode input voltage, VIC
VDD = 10 V
0.2
8.5
0.2
8.5
0
8.5
V
Operating free-air temperature, TA
0
70
40
85
55
125
C