TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS649A DECEMBER 1994 REVISED JUNE 1995
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
D
Organization
TM124BBK32F . . . 1 048 576
32
TM248CBK32F . . . 2 097 152
32
D
Single 5-V Power Supply (
10% Tolerance)
D
72-Pin Single-In-Line Memory Module
(SIMM) for Use With Socket
D
TM124BBK32F Utilizes Two 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
D
TM248CBK32F Utilizes Four 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
D
Long Refresh Period
16 ms (1024 Cycles)
D
All Inputs, Outputs, Clocks Fully TTL
Compatible
D
3-State Output
D
Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
D
Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR ), RAS-Only, and
Hidden Refresh
D
Presence Detect
D
Performance Ranges:
ACCESS
ACCESS ACCESS READ
TIME
TIME
TIME
OR
tRAC
tAA
tCAC
WRITE
CYCLE
(MAX) (MAX)
(MAX)
(MIN)
'124BBK32F-60
60 ns
30 ns
15 ns
110 ns
'124BBK32F-70
70 ns
35 ns
18 ns
130 ns
'124BBK32F-80
80 ns
40 ns
20 ns
150 ns
'248CBK32F-60
60 ns
30 ns
15 ns
110 ns
'248CBK32F-70
70 ns
35 ns
18 ns
130 ns
'248CBK32F-80
80 ns
40 ns
20 ns
150 ns
D
Low Power Dissipation
D
Operating Free-Air Temperature Range
0
C to 70
C
D
Gold-Tabbed Versions Available:
TM124BBK32F
TM248CBK32F
D
Tin-Lead (Solder) Tabbed Versions
Available:
TM124BBK32U
TM248CBK32U
description
TM124BBK32F
The TM124BBK32F is a 32-megabit dynamic random-access memory (DRAM) organized as four times
1 048 576
8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576
16-bit DRAMs, each
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is
described in the TMS418160 data sheet. The TM124BBK32F SIMM is available in the single-sided BK-leadless
module for use with sockets.
TM248CBK32F
The TM248CBK32F is a 64-megabit DRAM organized as four times 2 097 152
8 in a 72-pin SIMM. The SIMM
is composed of four TMS418160DZ, 1 048 576
16-bit DRAMs, each in a 42-lead plastic SOJ package
mounted on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data
sheet. The TM248CBK32F SIMM is available in the double-sided BK-leadless module for use with sockets.
operation
The TM124BBK32F operates as two TMS418160DZs connected as shown in the functional block diagram and
Table 1. The TM248CBK32F operates as four TMS418160DZs connected as shown in the functional block
diagram and Table 1. The common I / O feature dictates the use of early-write cycles to prevent contention on
D and Q.
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1995, Texas Instruments Incorporated
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS649A DECEMBER 1994 REVISED JUNE 1995
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
PRESENCE DETECT
SIGNAL
(PIN)
PD1
(67)
PD2
(68)
PD3
(69)
PD4
(70)
80 ns
VSS
VSS
NC
VSS
TM124BBK32F
70 ns
VSS
VSS
VSS
NC
60 ns
VSS
VSS
NC
NC
80 ns
NC
NC
NC
VSS
TM248CBK32F
70 ns
NC
NC
VSS
NC
60 ns
NC
NC
NC
NC
NC
NC
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
VCC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
VSS
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
BK SINGLE-IN-LINE MEMORY MODULE
( TOP VIEW )
TM124BBK32F
( SIDE VIEW )
PIN NOMENCLATURE
A0 A9
Address Inputs
CAS0 CAS3
Column-Address Strobe
DQ0 DQ31
Data In/Data Out
NC
No Connection
PD1 PD4
Presence Detects
RAS0 RAS3
Row-Address Strobe
VCC
5-V Supply
VSS
Ground
W
Write Enable
TM248CBK32F
( SIDE VIEW )
VSS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
VCC
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
NC
VCC
A8
A9
RAS3
RAS2
NC
NC
VSS
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS649A DECEMBER 1994 REVISED JUNE 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
Table 1. Connection Table
DATA BLOCK
RASx
CASx
DATA BLOCK
SIDE 1
SIDE 2
CASx
DQ0 DQ7
RAS0
RAS1
CAS0
DQ8 DQ15
RAS0
RAS1
CAS1
DQ16 DQ23
RAS2
RAS3
CAS2
DQ24 DQ31
RAS2
RAS3
CAS3
Side 2 applies to the TM248CBK32F only.
single-in-line memory module and components
PC substrate: 1,27
0,1 mm (0.05 inch) nominal thickness; 0.005 inch / inch maximum warpage
Bypass capacitors: Multilayer ceramic
Contact area for TM124BBK32F and TM248CBK32F: Nickel plate and gold plate over copper
Contact area for TM124BBK32U and TM248CBK32U: Nickel plate and tin / lead over copper
functional block diagram ( TM124BBK32F and TM248CBK32F, side 1)
1M
16
A0 A9
DQ0
RAS
DQ7
W
LCAS
DQ8
UCAS
DQ15
A0 A9
D8 D15
D24 D31
W
RAS0
CAS0
CAS1
RAS2
10
10
10
D0 D7
D16 D23
1M
16
A0 A9
DQ0
RAS
DQ7
W
LCAS
DQ8
UCAS
DQ15
CAS2
CAS3
functional block diagram ( TM248CBK32F, side 2 )
1M
16
A0 A9
DQ0
RAS
DQ7
W
LCAS
DQ8
UCAS
DQ15
A0 A9
D0 D7
D16 D23
W
RAS1
CAS1
CAS0
RAS3
10
10
10
D8 D15
D24 D31
1M
16
A0 A9
DQ0
RAS
DQ7
W
LCAS
DQ8
UCAS
DQ15
CAS3
CAS2
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS649A DECEMBER 1994 REVISED JUNE 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
(see Note 1)
1 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range on any pin (see Note 1)
1 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit output current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation:
TM124BBK32F, TM124BBK32U
2 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TM248CBK32F, TM248CBK32U
4 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
55
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
recommended operating conditions
MIN
NOM
MAX
UNIT
VCC
Supply voltage
4.5
5
5.5
V
VIH
High-level input voltage
2.4
6.5
V
VIL
Low-level input voltage (see Note 2)
1
0.8
V
TA
Operating free-air temperature
0
70
C
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
'124BBK32F - 60
'124BBK32F - 70
'124BBK32F - 80
UNIT
PARAMETER
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH High-level output voltage
IOH = 5 mA
2.4
2.4
2.4
V
VOL
Low-level output voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leakage)
VCC = 5.5 V, VI = 0 V to 6.5 V,
All other pins = 0 V to VCC
10
10
10
A
IO
Output current (leakage)
VCC = 5.5 V,
VO = 0 V to VCC,
CAS high
10
10
10
A
ICC1
Read- or write-cycle
current
VCC = 5.5 V, Minimum cycle
180
160
140
mA
ICC2 Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
4
4
4
mA
ICC2 Standby current
VIH = VCC 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
2
2
2
mA
ICC3
Average refresh current
(RAS only or CBR)
VCC = 5.5 V, Minimum cycle,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
180
160
140
mA
ICC4 Average page current
VCC = 5.5 V, tPC = MIN,
RAS low,
CAS cycling
180
160
140
mA
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS649A DECEMBER 1994 REVISED JUNE 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
'248CBK32F - 60
'248CBK32F - 70
'248CBK32F - 80
UNIT
PARAMETER
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH
High-level output
voltage
IOH = 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leak-
age)
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All other pins = 0 V to VCC
10
10
10
A
IO
Output current
(leakage)
VCC = 5.5 V,
VO = 0 V to VCC, CAS high
20
20
20
A
ICC1
Read- or write-cycle
current (see Note 3)
VCC = 5.5 V,
Minimum cycle
184
164
144
mA
ICC2 Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
8
8
8
mA
ICC2 Standby current
VIH = VCC 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
4
4
4
mA
ICC3
Average refresh
current (RAS only or
CBR) (see Note 3)
VCC = 5.5 V,
Minimum cycle,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
360
320
280
mA
ICC4
Average page current
(see Note 4)
VCC = 5.5 V,
tPC = MIN,
RAS low,
CAS cycling
184
164
144
mA
For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
PARAMETER
'124BBK32F
'248CBK32F
UNIT
PARAMETER
MIN
MAX
MIN
MAX
UNIT
Ci(A)
Input capacitance, A0 A9
10
20
pF
Ci(R)
Input capacitance, RAS inputs
7
7
pF
Ci(C)
Input capacitance, CAS inputs
7
14
pF
Ci(W)
Input capacitance, W
14
28
pF
Co(DQ) Output capacitance on DQ0 DQ31
7
14
pF
NOTE 5: VCC = 5 V
0.5 V, and the bias on pins under test is 0 V.
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