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Электронный компонент: UC1612J

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UC1612
UC3612
Dual Schottky Diode
Monolithic Two Diode Array
Exceptional Efficiency
Low Forward Voltage
Fast Recovery Time
High Peak Current
Small Size
The two-diode array is designed for high-current, low duty-cycle
applications typical of flyback voltage clamping for inductive loads.
The use of Schottky diode technology features high efficiency
through lowered forward voltage drop and decreased reverse recov-
ery time.
This single monolithic chip is fabricated in hermetic CERDIP as well
as copper leaded plastic MINIDIP and SOIC surface mount power
pack. The UC1612 in ceramic is designed for
-
55C to +125C
environments, but with reduced peak current capability; while the
UC3612 has higher current rating over a 0C to +70C ambient tem-
perature range.
FEATURES
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per diode) . . . . . . . . . . . . . . . . . . . .50V
Peak Forward Current, UC3612 . . . . . . . . . . . . . . . . . . . . . .3A
Peak Forward Current, UC1612 . . . . . . . . . . . . . . . . . . . . . .1A
Storage Temperature Range . . . . . . . . . . . . .
-
65C to +150C
Junction Temperature . . . . . . . . . . . . . . . . . . .
-
55C to +150C
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . .300C
Currents are positive into, negative out of the specified terminal.
Consult Packaging Section of Databook for thermal limitations
and considerations of packages.
CONNECTION DIAGRAM
8/94
DIL-8, SOIC-8
(Top View)
J, N, or DP Package
Pins 2, 3, 6, 7 are connected to substrate and must be electrically isolated.
UC1612
UC3612
ELECTRICAL CHARACTERISTICS
All specifications apply to each individual diode. T
J
= 25C except as noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Leakage Drop
I
F
= 100mA
0.49
0.55
V
I
F
= 1A
0.9
1.0
V
Leakage Current
V
R
= 40V
.01
0.1
mA
V
R
= 40V, T
J
= 100C
0.1
1.0
mA
Reverse Recovery
0.5A Forward to 0.5A Reverse
15
ns
Forward Recovery
1A Forward to 1.1V Recovery
30
ns
Junction Capacitance
V
R
= 5V
70
pF
Note: At forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes.
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD.
MERRIMACK, NH 03054
TEL. (603) 424-2410
FAX (603) 424-3460
Reverse Current vs Voltage
Forward Voltage vs Current
2
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1999, Texas Instruments Incorporated