T63H0008A

TM Technology, Inc. reserves the right P. 1 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

T63H0008A

Li-Ion/Polymer Battery for
one-cell Protector

Features

High voltage device is used for charger connection pins V- and COUT pins: Maximum 30V

Internal high accuracy voltage detection circuit

1.Overcharge detection voltage 3.9V to 4.4V (applicable in 5mV step)

Accuracy : ±25mV (+25ºC) and ±30mV (-5ºC to +55ºC)

2.Overcharge hysteresis voltage 0.0V to 0.4V ...........................................Accuracy : ±25mV

The overcharge hysteresis voltage can be selected from the range 0.0V to 0.4V in 50mV step.

3.Over-discharge detection voltage 2.0V to 3.0 V (10mV step) ......................Accuracy : ±50mV.
4.Over-discharge hysteresis voltage 0.0V to 0.7 V (*2) ...............................Accuracy : ±50mV

The over-discharge hysteresis voltage can be selected from the range 0.0V to 0.7V in 100mV step.

5.Overcurrent 1 detection voltage 0.05V to 0.3V (10mV step)........................Accuracy : ±15mV
6.Overcurrent 2 detection voltage 0. 5V (fixed) .........................................Accuracy : ±100mV

*1: Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis voltage

(where overcharge release voltage<3.8V is prohibited.)

*2: Over-discharge release voltage = Over-discharge detection voltage + Over-discharge hysteresis voltage

(where over-discharge release voltage>3.4V is prohibited.)

Delay times (overcharge: tVDET1, over-discharge: tVDET2,

over-current 1: tVDET3, over-current 2: t VDET4)

are generated by an internal circuit. No external capacitor is necessary. ................Accuracy: ±20%

Three-step over-current detection circuit is included. (over-current 1, over-current 2,

and load short-circuiting).

Either charge function or charge inhibition function for 0V battery can be selected.

Charger detection function and abnormal charge current detection function

1.The over-discharge hysteresis is released by detecting negative voltage at the V- pin (-0.7V typ.).

(Charger detection function)

2.When the output voltage of the DOUT pin is high and the voltage at the V- pin is equal to or lower than

the charger detection voltage (-0.7V typ.), the output voltage of the COUT pin goes low.

(Abnormal charge current detection function)

l Low current consumption .

1.Operation 3.0uA typ. 7.0uA max.(IDD).
2.Power -down 0.1 uA max.(ISB).

l Wide operating temperature range: -40ºC to +85ºC
l Ultra Small package .......................SOT-23-6 (6 PIN),SNB(B)(6PIN).

(SNB Type please contact Sales).

T63H0008A

TM Technology, Inc. reserves the right P. 2 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

Part Number Examples

(*Note 1)

Part No.

Over-Charge

detection

voltage

Over-charge

Hysteresis

voltage

Over-discharge

detection

voltage

Over-discharge

Hysteresis

voltage

Over-Current 1

detection

voltage

0V battery

charge

function

marking

T63H0008A -AX

4.28V

0.2V

2.3V

0.13V

None

008A

T63H0008A -BX

4.30V

0.1V

2.3V

0.08V

None

008B

T63H0008A -CX

4.325V

0.25V

2.5V

0.4V

0.15V

None

008C

T63H0008A -DX

4.35V

0.2V

2.5V

0.2V

0.15V

None

008D

...*Note2

....

Note 1:This table is for SOT-23-6 pin Package, SNB Type please contact Sales.
Note 2:New model version and specific characteristics may be order by customer.

General Description

The T63H0008A series are lithium-ion/lithium polymer rechargeable battery protection ICs

incorporating high-accuracy voltage detection circuit and delay circuit.

The T63H0008A series are suitable for protection of single-cell lithium ion/lithium polymer

battery packs from overcharge, over-discharge and over-current and 0V battery charge function.

BLOCK DIAGRAM

VSS

V D 2

VDD

Logic

Circuit

DOUT

V D 4

V-

COUT

Oscillator

V D 1

Level

Shift

Logic

Circuit

V D 3

Counter

Short

Detector

Delay

T63H0008A

TM Technology, Inc. reserves the right P. 3 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

Pin Configurations

( M a r k S i d e )

S O T - 2 3 - 6 T O P V I E W

S N B ( A & B ) - 6 P I N T O P

V I E W

( M a r k S i d e )

PIN DESCRIPTION

SOT-23-6 SNB(A) SNB(B) Symbol

Pin description

Dout

Output of over-discharge detection, CMOS output

V-

Pin for charge negative input

Cout

Output of over-charge detection, CMOS output

Test Pin for delay time measurement

VDD Power supply

Vss

Ground

ABSOLUTE MAXIMUM RATINGS

(Temp=25ºC)

Symbol

Item

Ratings

Unit

VDD

Supply voltage

-0.3 to 9

V-

Vct

Input voltage
V- pin
Ct pin

-30 to V

+0.3

Vss-0.3 toV

+0.3

V
V

Vcout
Vdout

Output voltage
Cout pin
Dout pin

-30 to V

+0.3

Vss-0.3 toV

+0.3

V
V

Power dissipation

250

Topt

Operating temperature range

-40 to85

ºC

Tstg

Storage temperature range

-55 to 125

ºC

Absolute Maximum ratings are threshold limit values that must not be exceeded even for an instant
under any conditions. Moreover, such values for any two items must not be reached simultaneously.
Operation above these absolute maxim um ratings may cause degradation or permanent damage to the
device. These are stress ratings only and do not necessarily imply functional operation below these
limits.

T63H0008A

TM Technology, Inc. reserves the right P. 4 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

ELECTRICAL CHARACTERISTIC1

(Temp=25ºC)

Symbol

Parameter

Conditions

MIN.

TYP.

MAX.

Unit

INPUT VOLTAGE / OPERATION VOLTAGE

VDD1

Operating input voltage

Voltage defined as VDD to VSS

1.5

VDD2

Operating input voltage

Voltage defined as VDD to V-

1.5

CURRENT CONSUMPTION

IDD

Normal operation current

VDD=3.5V, V-=0V

1.0

3.0

7.0

ISB

Standby current

VDD=V-=1.5V

0.1

OUTPUT RESISTANCE

RCOUTH

COUT pin H resistance

VCOUT=3.0V,VDD=3.5V,V-=0V

2.5

Kohm

RCOUTL

COUT pin L resistance

VCOUT=0.5,VDD=4.5V,V-=0V

2.5

Kohm

RDOUTH

DOUT pin H resistance

VDOUT=3.0V,VDD=3.5V,V-=0V

2.5

Kohm

RDOUTL

DOUT pin L resistance

VDOUT=0.5V,VDD=V-=1.8V

2.5

Kohm

V- INTERNAL RESISTANCE

RV-D

Internal resistance between

V- and VDD

VDD=1.8V,V-=0V

100

300

900

Kohm

RV-S

Internal resistance be tween

V- and VSS

VDD=3.5V,V-=1.0V

Kohm

DETECTION VOLTAGE

4.255

4.280

4.305

4.275

4.300

4.325

4.300

4.325

4.350

VDET1

Over-charge detection voltage

VDET1=3.9V to 4.4V

5mV Step

4.325

4.350

4.375

VHCT1

Over-charge hysteresis voltage

VHCT1=0.0V to 0.4V

50mV Step

VHCT1

-0.025

VHCT1

+0.025

tVDET1

Output delay of over charge

0.96

1.2

1.4

/BX

2.25

2.30

2.35

2.45

2.50

2.55

VDET2

Over-discharge detection voltage

VDET2=2.0V to 3.0V

10mV Step

2.45

2.50

2.55

VHDT2

Over-discharge hysteresis voltage

VHDT2=0.0V to 0.7V

100mV Step

VHDT2

-0.050

VHDT2 VH D T 2

+0.050

tVDET2

Output delay of over-discharge

115

144

173

VDET3

Over-current 1 detection voltage

VDET3=0.05V to 0.3V

10mV Step

Detect rising edge of "V-" pin voltage

VDET3

-0.015

VDET3

+0.015

tVDET3

Over-current 1 detection delay

time

7.2

VDET4

Over-current 2 detection voltage

0.4

0.5

0.6

tVDET 4

Over-current 2 detection delay

time

1.8

2.24

2.7

VDET5

Charger detection voltage

Detect falling edge of `V-"pin voltage

-1.0

-0.7

-0.4

VSHORT

Load short-circuiting detection

voltage

0.9

1.2

1.5

tSHORT

Load short-circuiting detection

delay time

220

320

380

0V BATTERY CHARGING FUNCTION

V0cha

0V Battery charge starting charge

voltage

Applied for 0V battery charge function

1.5

V0inh

0V Battery charge inhibition

charge voltage

Applied for 0V battery charge

inhibition function

0.6

1.0

1.4

Note: Since products are not screened at low/ high temperature, the specification for this range is

guaranteed by design, not tested in production.

T63H0008A

TM Technology, Inc. reserves the right P. 5 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

ELECTRICAL CHARACTERISTIC2

*note 1

(Temp=-40 to 85ºC)

Symbol

Parameter

Conditions

MIN.

TYP.

MAX.

Unit

INPUT VOLTAGE / OPERATION VOLTAGE

VDD1

Operating input voltage

Voltage defined as VDD to VSS

1.5

VDD2

Operating input voltage

Voltage defined as VDD to V-

1.5

CURRENT CONSUMPTION

IDD

Normal operation current

VDD=3.5V, V-=0V

0.7

3.0

8.0

ISB

Standby current

VDD=V-=1.5V

0.1

OUTPUT RESISTANCE

RCOUTH

COUT pin H resistance

VCOUT=3.0V,VDD=3.5V,V-=0V

1.2

Kohm

RCOUTL

COUT pin L resistance

VCOUT=0.5,VDD=4.5V,V-=0V

1.2

Kohm

RDOUTH

DOUT pin H resistance

VDOUT=3.0V,VDD=3.5V,V-=0V

1.2

Kohm

RDOUTL

DOUT pin L resistance

VDOUT=0.5V,VDD=V-=1.8V

1.2

Kohm

V- INTERNAL RESISTANCE

RV-D

Internal resistance between

V- and VDD

VDD=1.8V,V-=0V

300

1310

Kohm

RV-S

Internal resistance between

V- and VSS

VDD=3.5V,V-=1.0V

7.2

Kohm

DETECTION VOLTAGE

4.225

4.280

4.320

4.260

4.300

4.340

4.270

4.325

4.365

VDET1

Over-charge detection voltage

VDET1=3.9V to 4.4V

5mV Step

4.320

4.350

4.380

VHCT1

Over-charge hysteresis voltage

VHCT1=0.0V to 0.4V

50mV Step

VHCT 1

-0.025

VHCT 1 VHCT 1

+0.025

tVDET1

Output delay of over charge

0.7

1.2

2.0

AX
/BX

2.22

2.30

2.38

2.42

2.50

2.58

VDET2

Over-discharge detection voltage

VDET2=2.0 to 3.0V

10mV Step

2.42

2.50

2.58

VHDT2

Over-discharge hysteresis voltage

VHDT2=0.0V to 0.7V

100mV Step

VHDT2

-0.050

VHDT2

VH D T 2

+0.050

tVDET2

Output delay of over-discharge

144

245

VDET3

Over-current 1 detection voltage

VDET3=0.05V to 0.3V

10mV Step

Detect rising edge of "V-" pin voltage VDET 3

-0.015

VDET3 VDET3

+0.015

tVDET3

Over-current 1 detection delay

time

VDET4

Over-current 2 detection voltage

0.37

0.5

0.63

tVDET 4

Over-current 2 detection delay

time

1.2

2.24

3.8

VDET5

Charger detection voltage

Detect falling edge of `V-"pin voltage

-1.0

-0.7

-0.4

VSHORT

Load short-circuiting detection

voltage

0.7

1.2

1.7

tSHORT

Load short-circuiting detection

delay time

150

320

540

0V BATTERY CHARGING FUN CTION

V0cha

0V Battery charge starting charge

voltage

Applied for 0V battery charge function

1.7

V0inh

0V Battery charge inhibition

charge voltage

Applied for 0V battery charge

inhibition function

0.4

1.0

1.6

Note 1: Since products are not screened at low/high temperature, the specification for this range is

guaranteed by design, not tested in production.

T63H0008A

TM Technology, Inc. reserves the right P. 6 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

MEASUREMENT CIRCUITS

Unless otherwise specified, the output voltage levels "H" and "L" at COUT and DOUT pins are judged by the
threshold voltage (1.0V) of the N channel FET. Judge the COUT pin level with respect to V- and the DOUT pin
level with respect to VSS.
(1) Measurement Condition 1, Measurement Circuit 1

(Overcharge detection voltage, Overcharge hysteresis voltage).

The overcharge detection voltage (VDET1) is defined by the voltage between VDD and VSS at which VCO
goes "L" from "H" when the voltage V1 is gradually increased from the starting condition V1=3.5V and
V2=0V. The overcharge hysteresis voltage (VHC T1) is then defined by the difference between the
overcharge detection voltage (VDD) and the voltage between VDD and VSS at which VCOUT goes "H"
from "L" when the voltage V1 is gradually decreased.

(2) Measurement Condition 2, Measurement Circuit 2

(Over-discharge detection voltage, Over-discharge hysteresis voltage )

The over-discharge detection voltage (VDET2) is defined by the voltage between VDD and VSS at which
VDO goes "L" from "H" when the voltage V1 is gradually decreased from the starting condition V1=3.5V
and V2=0V. The over-discharge hysteresis voltage (VHDT2 ) is then defined by the difference between the
over-discharge detection voltage (VDET2) and the voltage between VDD and VSS at which VDO goes
"H" from "L" when the voltage V1 is gradually increased.

(3) Measurement Condition 3, Measurement Circuit 2

(Over-current 1 detection voltage, Over-current 2 detection voltage, Load short-circuiting detection voltage)

The over-current 1 detection voltage is defined by the voltage between V- and VSS whose delay time for
changing VDO from "H" to "L" lies between the minimum and the maximum value of the over-current 1
detection delay time when the voltage V2 is increased rapidly within 10us from the starting condition
V1=3.5V and V2=0V.
The over-current 2 detection voltage is defined by the voltage between V- and VSS whose delay time for
changing VDO from "H" to "L" lies between the minimum and the maximum value of the over-current 2
detection delay time when the voltage V2 is increased rapidly within 10us from the starting condition
V1=3.5V and V2=0V.
The load short-circuiting detection voltage is defined by the voltage between V- and VSS whose delay time
for changing VDO from "H" to "L" lies between the minimum and the maximum value of the load
short-circuiting detection delay time when the voltage V2 is increased rapidly within 10us from the starting
condition V1=3.5V and V2=0V.

T63H0008A

TM Technology, Inc. reserves the right P. 7 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

(4) Measurement Condition 4, Measurement Circuit 2

(Charger detection voltage, abnormal charge current detection voltage)
Set V1=1.8V and V2=0V. Increase V1 gradually until V1=VDET2 +(VHDT2 /2), then decrease V2 from 0
V gradually. The voltage between V- and VSS when VDO goes "H" from "L" is the charger detection
voltage (VDET5). Charger detection voltage can be measured only in the product whose over-discharge
hysteresis VHDT2 ? 0.
Set V1=3.5V and V2=0V, Decrease V2 from 0 V gradually. The voltage between V- and VSS when VCO
goes "L" from "H" is the abnormal charge current detection voltage. The abnormal charge current detection
voltage has the same value as the charger detection voltage (VDET 5).

(5) Measurement Condition 5, Measurement Circuit 2

(Normal operation current consumption, Power-down current consumption)
Set V1=3.5V and V2=0V under normal condition. The current IDD flowing through VDD pin is the
normal operation consumption current (IDD).
Set V1=V2=1.5V under over-discharge condition. The current IDD flowing through VDD pin is the
power-down current consumption (ISB).

(6) Measurement Condition 6, Measurement Circuit 3

(Internal resistance between V- and VDD, Internal resistance between V- and VSS)
Set V1=1.8V and V2=0V. The resistance between V- and VDD is the internal resistance (RV-D) between
V- and VDD. Set V1=3.5V and V2=1.0V. The resistance between V- and VSS is the internal resistance
(RV-S) between V- and VSS.

(7) Measurement Condition 7, Measurement Circuit 4

(COUT pin H resistance, COUT pin L resistance)
Set V1=3.5V, V2=0V and V3=3.0V. COUT pin resistance is the COUT pin H resistance (RCOUT H ).
Set V1=4.5V, V2=0V and V3=0.5V. COUT pin resistance is the COUT pin L resistance (RCOUT L )
.

(8) Measurement Condition 8, Measurement Circuit 4

(DOUT pin H resistance, DOUT pin L resistance)
Set V1=3.5V, V2=0V and V4=3.0V. DOUT pin resistance is the DOUT pin H resistance (RDOUTH ).
Set V1=1.8V, V2=0V and V4=0.5V. DOUT pin resistance is the DOUT pin L resistance (RDOUT L ).

(9) Measurement Condition 9, Measurement Circuit 5

(Overcharge detection delay time, Over-discharge detection delay time)
The overcharge detection delay time (tVDET1) is the time needed for VCO to change from "H" to "L" just
after the V1 rapid increase within 10us from the overcharge detection voltage (VDET1) - 0.2V to the

T63H0008A

TM Technology, Inc. reserves the right P. 8 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

overcharge detection voltage (VDET1) + 0.2V in the condition V2=0V.
The over-discharge detection delay time (tVDET2 ) is the time needed for VDO to change from "H" to "L"
just after the V1 rapid decrease within 10us from the over -discharge detection voltage (VDET2) + 0.2V to
the over-discharge detection voltage (VDET2) - 0.2V in the condition V2=0V.

(10) Measurement Condition 10, Measurement Circuit 5

(Over-current 1 detection delay time, Over-current 2 detection delay time, Load short-circuiting
detection delay time, Abnormal charge current detection delay time )
Set V1=3.5V and V2=0V. Increase V2 from 0 V to 0.35 V momentarily (within 10 us) The time needed for
VDO to go "L" is over-current 1 detection delay time (tVDET3).
Set V1=3.5V and V2=0V. Increase V2 from 0 V to 0.7 V momentarily (within 10us) The time needed for
VDO to go "L" is over-current 2 detection delay time (tVDET4).
Set V1=3.5V and V2=0V. Increase V2 from 0 V to 1.6 V momentarily (within 10 us) The time needed for
VDO to go "L" is the load short-circuiting detection delay time (tSHORT ).
Set V1=3.5V and V2=0V. Decrease V2 from 0 V to -1.1 V momentarily (within 10 us) The time needed for
VCO to go "L" is the abnormal charge current detection delay time. The abnormal charge current detection
delay time has the same value as the overcharge detection delay time.

(11) Measurement Condition 11, Measurement Circuit 2 (Product with 0V battery charge function)

(0V battery charge starting charger voltage )
Set V1=V2=0V and decrease V2 gradually. The voltage between VDD and V- when VCO goes "H" (V- +
0.1 V or higher) is the 0V battery charge starting charger voltage (V0CHA ).

(12) Measurement Condition 12, Measurement Circuit 2 (Product with 0V battery charge inhibition

function)

(0V battery charge inhibition battery voltage)
Set V1=0V and V2=-4V. Increase V1 gradually. The voltage between VDD and VSS when VCO
goes "H"(V- + 0.1 V or higher) is the 0V battery charge inhibition battery voltage (V0INH ).

T63H0008A

TM Technology, Inc. reserves the right P. 10 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

Description of Operation

Normal condition

The T63H0008A monitors the voltage of the battery connected between VDD and VSS pin and the voltage

difference between V- and VSS pin to control charging and discharging. When the battery voltage is in the
range from the over -discharge detection voltage (VDET2) to the overcharge detection voltage (VDET1), and
the V- pin voltage is in the range from the charger detection voltage (VDET5) to the over-current 1 detection
voltage (VDET3), the IC turns both the charging and discharging control FETs on. This condition is called the
normal condition, and in this condition charging and discharging can be carried out freely.

Note: When a battery is connected to the IC for the first time, the battery may not enter dischargeable state. In this case, set the

V- pin voltage equal to the VSS voltage or connect a charger to enter the normal condition.

Over-current condition (Detection of Over-current 1, Over-current 2, and Load short-circuiting)

When the condition in which V- pin voltage is equal to or higher than the over-current detection voltage,

condition which caused by the excess of discharging current over a specified value, continues longer than the
overcharge detection delay time in a battery under the normal condition, the T63H0008A turns the discharging
control FET off to stop discharging. This condition is called the over-current condition.

Though the V- and VSS pins are shorted by the RV-S resistor in the IC under the over-current condition,

the V- pin voltage is pulled to the VDD level by the load as long as the load is connected.
The V- pin voltage returns to V SS level when the load is released. The over-current condition returns to the
normal condition when the impedance between the EB+ and EB- pin becomes higher than the automatic
recoverable load resistance (see the equation [1] below), and the IC detects that the V- pin potential is lower
than the over-current 1 detection voltage (VDET3).

Note: The automatic recoverable load resistance changes depending on the battery voltage and over-current 1detection voltage

settings.

Overcharge condition

When the battery voltage becomes higher than the overcharge detection voltage (VDD) during charging

under the normal condition and the detection continues for the overcharge detection delay time (tVDET1) or
longer, the T63H0008A turns the charging control FET off to stop charging. This condition is called the
overcharge condition. The overcharge condition is released by the following
two cases ((1) and (2)):
(1) When the battery voltage falls below the voltage difference, the overcharge detection voltage (VDET1) -

overcharge detection hysteresis voltage (VHC T1 ), the T63H0008A turns the charging control FET on and
turns to the normal condition.

(2) When a load is connected and discharging starts, the T63H0008A turns the charging control FET on and

returns to the normal condition. The mechanism is : just after the load is connected and discharging starts,
the discharging current flows through the parasitic diode in the charging control FET. At this moment V-
pin potential increases momentarily voltage of the parasitic diode from the VSS level When the V- pin
voltage goes higher than the over-current 1 detection voltage, and provided that the battery voltage goes

T63H0008A

TM Technology, Inc. reserves the right P. 11 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

under the overcharge detection voltage by the internal impedance, the T63H0008A release the overcharge
condition.

Note:(1).If the battery is charged to a voltage higher than the overcharge detection voltage (VDET1) and the battery voltage does

not fall below the overcharge detection voltage (VDET1) even when a heavy load is connected, the detection of
over-current 1 , over-current 2 and load short-circuiting does not work .Since an actual battery has the internal
impedance of several dozens of mW, the battery voltage drops immediately after a heavy load which causes
over-current is connected, and the detection of over-current 1, over-current 2 and load short -circuiting then works..

(2).When a charger is connected after the overcharge detection, the overcharge condition is not released even if the battery

voltage is below the overcharge detection voltage VDET1. The overcharge condition is released when the V- pin
voltage goes over the charger detection voltage VDET 5 by removing the charger.

Over-discharge condition

When the battery voltage falls below the over-discharge detection voltage (VDET2) during discharging
under the normal condition and the detection continues for the over-discharge detection delay time
(tVDET2) or longer, the T63H0008A turns the discharging control FET off to stop discharging. This
condition is called the over-discharge condition. When the discharging control FET turns off, the V- pin
voltage is pulled up by the RV-D resistor between V- and VDD in the IC. The voltage difference between
V- and VDD then falls bellow 1.3V (typ.), the current consumption is reduced to the power-down current
consumption (ISB). This condition is called the power -down condition.The power -down condition is
released when a charger is connected and the voltage difference between V- and VDD becomes 1.3 V (typ.)
or higher. Moreover when the battery voltage becomes the over-discharge detection voltage or higher, the
T63H0008A turns the discharging FET on and returns to the normal condition.

Charger detection

When a battery in the over-discharge condition is connected to a charger and provided that the V- pin
voltage is lower than the charger detection voltage (VDET5), the T63H0008A releases the over-discharge
condition and turns the discharging control FET on as the battery voltage becomes equal to or higher than
the over-discharge detection voltage (VDET2) since the charger detection function works. This action is
called charger detection.
When a battery in the over-discharge condition is connected to a charger and provided that the V- pin
voltage is not lower than the charger detection voltage (VDET5), the T63H0008A releases the
over-discharge condition when the battery voltage reaches the over-discharge detection voltage (VDET2) +
over-discharge hysteresis (VHDT2 ) or higher.

Abnormal charge current detection

If the V- pin voltage falls below the charger detection voltage (VDET5) during charging under normal
condition and it continues for the overcharge detection delay time (t VDET1) or longer, the charging control
FET turns off and charging stops. This action is called the abnormal charge current detection. Abnormal
charge current detection works when the DOUT pin voltage is "H" and the V- pin voltage falls below the
charger detection voltage (VDET 5). Consequently, if an abnormal charge current flows to an
over-discharged battery, the T63H0008A turns the charging control FET off and stops charging after the
battery voltage becomes higher than the over-discharge detection voltage which make the DOUT pin

T63H0008A

TM Technology, Inc. reserves the right P. 12 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

voltage "H", and still after the overcharge detection delay time (tVDET1) elapses.
Abnormal charge current detection is released when the voltage difference between V- pin and VSS pin
becomes less than charger detection voltage VDET5.

Delay circuits

The detection delay times are generated by dividing the approximate 7 kHz clock with a counter.

Note . The detection delay time for over-current 2 and load and short-circuiting start when the over-current 1 is detected. As soon as

the over-current 2 or load short-circuiting is detected over the detection delay time for over-current 2 or load
short-circuiting after the detection of over-current 1, the T63H0008A turns the discharging control FET off.

VDD

TIME

VDET3

VSS

VDET4

(tVDET4)

Over-current 2 detection delay time

When the over-current is detected and it continues for longer than the over-discharge detection delay time
without releasing the load, the condition changes to the power-down condition when the battery voltage
falls below the over-discharge detection voltage.
When the battery voltage falls below the over-discharge detection voltage due to the over-current, the
T63H0008A turns the discharging control FET off by the over-current detection. And in this case the
recovery of the battery voltage is so slow that the battery voltage after the over-discharge detection delay
time is still lower than the over-discharge detection voltage, the T63H0008A transits to the power-down
condition.

T63H0008A

TM Technology, Inc. reserves the right P. 13 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

DS pin

The DS pin is a test pin for delay time measurement and it should be open in the actual application. If a
capacitor whose capacitance is larger than 100pF or a resister whose resistance is larger than 100kW is
connected to this pin, error may occur in the delay time.

0V battery charge function (*1) (*2)

This function is used to recharge the connected battery whose voltage is 0V due to the self-discharge. When
the 0V battery charge starting charger voltage (V0CHA ) or higher is applied between EB+ and EB- pins by
connecting a charger, the charging control FET gate is fixed to VDD pin voltage. When the voltage between
the gate and source of the charging control FET becomes equal to or higher than the turn-on voltage by the
charger voltage, the charging control FET turns on to start charging. At this time, the discharging control
FET is off and the charging current flows through the internal parasitic diode in the discharging control FET.
When the battery voltage becomes equal to or higher than the over-discharge release voltage, the
T63H0008A enters the normal condition.

0V battery charge inhibition function (*1)

This function inhibits the recharging when a battery which is short-circuited (0V) internally is connected.
When the battery voltage is 1.0 V (typ.) or lower, the charging control FET gate is fixed to EB- pin voltage
to inhibit charging. When the battery voltage is the 0V battery charge inhibition battery voltage (V0INH ) or
higher, charging can be performed.
(*1) Some battery providers do not recommend charging for completely self-discharged battery. Please ask

battery providers before determining the 0V battery charge function.

(*2) The 0V battery charge function has higher priority than the abnormal charge current detection function.

Consequently, a product with the 0V battery charge function charges a battery forcedly and abnormal
charge current cannot be detected when the battery voltage is low.

T63H0008A

TM Technology, Inc. reserves the right P. 17 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

VDET1

VDET1-VHCT1

VDET2+VHDT2

VDET2

Battery

voltage

VDD

VSS

VDD

VSS

VDD

VDET5

VSS

DOUT pin

COUT pin

V- pin

4.Abnormal charge current detection

Charger connection

Load connection

Mode

(A)

(C)

(A)

Note:(A):Normal condition, (B):Overcharge conditing, (C):Overdischarge condition,
(D):Overcurrent condition
The charge is supposed to charge with constant current.
Note2:Abnormal charge current detection delay time
(=Overcharge detection delay time(tVDET1)

tVDET2

tVDET1

(A)

(B)

(Note 2)

T63H0008A

TM Technology, Inc. reserves the right P. 18 Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A

Application Circuits

T63H0008A

BATTERY

FET1

R1=470ohm

VDD_1

VSS

V-

COUT

DOUT

EB-

EB+

0.1uF

FET2

Table Constant for external components

Symbol

Parts

Purpose

Recommend

min.

max.

Remarks

FET1

N channel

MOSFET

Charge
control

---

*1) 0.4 V = Threshold voltage =

over-discharge detection voltage, Gate
to source withstand voltage

= Charger voltage.

FET2

N channel

MOSFET

Discharge control

---

*1) 0.4 V = Threshold voltage =

over-discharge detection voltage, Gate
to source withstand voltage

= Charger voltage.

Resistor

ESD protection

For Power
fluctuation

470ohm

300ohm

1k
ohm

*2) Set resistance so that 2 x R1

= R2

Capacitor

For Power
fluctuation

0.1uF

0.022
uF

1.0uF

*3) Install a capacitor of 0.022uF of

higher between VDD and VSS.

Resistor

Protection for

reverse connection

of a charger

2kohm

300ohm

4k
ohm

*4) To prevent current when a charger

is reversely connected. Select a larger
resistance within the range from
300ohm to 4kohm.

*1) If an FET with a threshold voltage of 0.4 V or lower is used, the FET may not cut the charging current.

If an FET with a threshold voltage equal to or higher than the over-discharge detection voltage is used,
discharging may be stoped before over-discharge is detected.
If the withstand voltage between the gate and source is lower than the charger voltage, the FET may
destroy.

*2) If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating

T63H0008A

TM Technology, Inc. reserves the right P. 19 Publication Date: Dec. 2003
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when a charger is connected reversely since the current flows from the charger to the IC.
Insert a resistor of 300W or higher as R1 for ESD protection.
If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption.

*3) If a capacitor of less than 0.022uF is installed as C1, DOUT may oscillate when load short-circuiting is

detected.
Be sure to install a capacitor of 0.022uF or higher as C1.

*4) If R2 has a resistance higher than 4kW, the charging current may not be cut when a high-voltage charger is

connected.

Note: (1).The D S pin should be open.

(2).The above connection diagram and constants do not guarantee proper operation. Evaluate upon actual

application and determine constants properly.

Precautions

Pay attention to the operating conditions for input/output voltage and load current so that the loss in the IC does

not exceed the permissible loss (power dissipation) of the package.

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