POWER&RF
6-18
2004 SUMMER
Variable capacitance diode for communications equipment
KV1870R/S
FEATURES
Very Low Operating Voltage: V
OP
=1.0 to 4.5V
: V
OP
=1.0 to 4.5V
Excellent Linearity of The CV Curve
CV
Extra Large Capacitance Ratio: A=5.00 to
: A=5.00~
Extra Low Series Resistance: R
S
=0.43
(typ.)
: R
S
=0.43
(typ.)
CLASSIFICATION
Rank
C
1
2
3
MIN
65.80
68.27
70.74
C
1
MAX
69.25
71.72
74.20
PACKAGE OUTLINE
ORDERING INFORMATION
Part name
Package
Marking Pin configuration
Ordering information
KV1870R
SOT23C-3
C7
KV1870RTL...Storage direction: TL(Left type)
KV1870S
SOT23-3
C7
KV1870STL...Storage direction: TL(Left type)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Rating Unit Remarks
Reverse Voltage
V
R
18
V
Forward Current
I
F
50
mA
Power Dissipation
P
D
100
mW
Storage Temperature Range
T
STG
-55 to 150
C
Operating Temperature Range
T
OP
-55 to +85
C
ELECTRICAL CHARCTERISTICS
T
A
=25
C
Value
Parameter
Symbol
MIN
TYP
MAX
Units
Conditions
Reverse Voltage
V
R
16
V
I
R
=10
A
Reverse Current
I
R
50.0
nA
V
R
=10V
C
1
65.80
70.00
74.20
pF
V
R
=1V, f=1MHz
Diode Capacitance
C
4.5
12.00
13.40
14.80
pF
V
R
=4.5V, f=1MHz
Series Resistance
R
S
0.43
0.50
V
R
=1.5V, f=100MHz
Capacitance Ratio
A
5.00
C
1
/C
5
* Capacitance measured in parallel connections.
Back to Back Type2
* Diode Capacitance measured with Agilent 4279A or equivalent instruments (at OSC level 20
5mVrms)
Agilent 4279AOSC 20
5mVrms
* Resistance meter is Agilent 4291B or equivalent instruments.
Agilent 4291B
POWER&RF
2004 SUMMER
6-19
1
2
3
4
5
6
7
8
9
10
11
TYPICAL CHARCTERISTICS
Capacitance versus Reverse Voltage
f=1MHz, T
A
=25
C
Reverse Current versus Reverse Voltage
T
A
=+25 / +55 / +85
C
200
C,
Capac
it
anc
e(pF
)
V
R
, Reverse Voltage(V)
0.0
1.0
2.0
3.0
4.0
5.0
10
100p
I
R
,
Rev
e
rs
e Current
(A
)
V
R
, Reverse Voltage(V)
0.0
16.0
10p
100f
T
A
=+25C
T
A
=+55C
T
A
=+85C
2.0
4.0
6.0
8.0 10.0 12.0 14.0
1p
Q versus Reverse Voltage
Q
T
A
=25
C
Series Resistance versus Frequency
V
R
=1.5V, T
A
=25
C
f=70MHz
1000
Q
V
R
, Reverse Voltage(V)
0.0
1.0
2.0
3.0
4.0
5.0
10
f=50MHz
f=100MHz
100
0.7
f, Frequency(Hz)
50M
500M
0.1
R
S
,
S
e
ries
Res
i
st
ance(
)
C(T
A
)/C(25
C) versus Reverse Voltage
C(T
A
)/C(25
C)
f=1MHz T
A
=-55 to +85
C
Capacitance Temperature Coefficient versus Reverse Voltage
f=1MHz, T
A
=25
C
1.08
C(T
A
)/
C(25
C)
V
R
, Reverse Voltage(V)
0.0
1.0
2.0
3.0
4.0
5.0
1.00
0.92
T
A
=-55C
T
A
=-15C
T
A
=+25C
T
A
=+55C
T
A
=+85C
0.94
0.96
0.98
1.02
1.04
1.06
1000
C/
T
A
,
T
e
m
perat
ure Coef
f
i
c
i
ent
(ppm
/
C)
V
R
, Reverse Voltage(V)
0.0
1.0
2.0
3.0
4.0
5.0
100
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