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Электронный компонент: 0790_XP162A01B5PR

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Power MOS FET
870
11
General Description
Features
Applications
Pin Configuration
Pin Assignment
Equivalent Circuit
Absolute Maximum Ratings
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.25
(Vgs=-4.5V)
: Rds(on)=0.4
(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting : SOT-89
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.25 (max)
NUltra High-Speed Switching
NSOT-89 Package
SOT-89
TOP VIEW
3
1
2
P-Channel MOS FET
(1 device built-in)
3
1
2
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-20
12
-2
-6
-2
2
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
Ta=25
:
When implemented on a ceramic PCB
Note:
11S_46XP162A01B5PR 02.9.12 4:19 PM 870
XP162A01B5PR
871
11
Electrical Characteristics
DC Characteristics
Ta=25
:
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
-0.5
V
0.4
0.3
Id=-1A, Vgs=-2.5V
Gate-Source Leakage Current
Igss
A
10
Forward Transfer Admittance
(note)
2.5
S
Body Drain Diode
Forward Voltage
-0.85
-1.1
V
Drain Cut-off Current
Idss
-10
A
Vf
Vds=-20V, Vgs=0V
Id=-1mA, Vds=-10V
Id=-1A, Vds=-10V
If=-2A, Vgs=0V
Vgs=
12V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=-1A, Vgs=-4.5V
0.19
0.25
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
65
180
320
pF
Vds=-10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic Characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
50
Turn-off Delay Time
td (off)
ns
40
15
1
0
ns
Vgs=-5V, Id=-1A
Vdd=-10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching Characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-ambience)
62.5
:/W
Implement on a ceramic PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal Characteristics
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XP162A01B5PR
872
11
Typical Performance Characteristics
1
0.8
0.6
0.4
0.2
0
-60
-30
0
30
60
90
120
150
Drain-Source On-State Resistance
:Rds (on) (
)
Ambient Temp.:Topr (
:)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse Test
Id-2A
-1A
-1A,-2A
-4.5V
Vgs-2.5V
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-60
-30
0
30
60
90
120
150
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
Ambient Temp.:Topr (
:)
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=-10V, Id=-1mA
-6
-5
-4
-3
-2
-1
0
0
-1
-2
-3
Drain Current:Id (A)
Drain-Source Voltage:Vds (V)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25
:
-4V
-4.5V
Vgs-1.5V
-5V
-2.5V
-2V
-3V
-3.5V
-6
-5
-4
-3
-2
-1
0
0
-1
-2
-3
-4
-5
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=-10V
-55
Topr25
125
0.5
0.4
0.3
0.2
0.1
-10
-2
0
-4
-6
-8
0
Drain-Source On-State Resistance
:Rds (on) (
)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25
:
Id-1A
-2A
10
1
0.1
0
-1
-2
-3
-4
-5
-6
Drain-Source On-State Resistance
:Rds (on) (
)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25
:
-4.5V
Vgs-2.5V
11S_46XP162A01B5PR 02.9.12 4:19 PM 872
XP162A01B5PR
873
11
10
1000
0
-5
-10
-20
Capacitance:C (pF)
Drain-Source Voltage:Vds (V)
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
Ciss
Coss
Crss
10000
100
-15
1000
1
100
10
-0.01
-0.1
-10
Switching Time:t (ns)
Drain Current:Id (A)
SWITCHING TIME vs. DRAIN CURRENT
Vgs=-5V, Vdd
-10V, PW=10
sec. duty1%
tf
tdoff
tdon
tr
-1
-10
-8
-6
-4
-2
0
0
5
10
15
Gate-Source Voltage:Vgs (V)
Gate Charge:Qg (nc)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-2A
-6
-5
-3
0
-0.2
0
-0.4
-0.6
-0.8
-1
Reverse Drain Current:Id (A)
Source-Drain Voltage:Vsd (V)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
0,4.5V
-2.5V
Vgs-4.5V
-4
-2
-1
10
1
0.1
0.01
0.001
0.0001
0.0001
100
10
1
0.1
0.01
0.001
Pulse Width:PW (sec)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5C/W, (Implemented on a ceramic PCB)
Single Pulse
Standardized Transition Thermal Resistance:s(t)
11S_46XP162A01B5PR 02.9.12 4:19 PM 873