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Электронный компонент: XB15A308

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PIN DIODE
1057
15
The XB15A308 PIN diode employs a high reliability glass package that is
designed for solid state antenna switches used in commercial two-way
radios.
General Description
GHigh Power Antenna Switch
(10W output two-way radio)
Dimensions
Applications
NHigh Power Handling
NSmall Capacitance at Zero Bias, Extremely
Small Reverse Bias
NSmall Series Order Resistance
NSmall Insertion Loss, High Isolation
NExtremely Small Wave Distortion
(TX sprious <-80dBc, RX intermodulation =
-73dBc @ 90dB
)
Ta=25
O
C
SYMBOL
PARAMETER
RATINGS
UNITS
V
RM
Repetitive Peak Reverse Voltage
50
V
V
R
Reverse Voltage
50
V
I
FSM
*
Forward Surge Current
2
A
P
Power Dissipation
500
mW
Tj
Junction Temperature
175
O
C
Tstg
Storage Temperature
-55 ~ 175
O
C
* t = 5sec
MAX 4.2
MIN 26
MIN 26
MAX 2.1
TYP 0.6
JEDEC DO-35
MAX 4.4
Unit: mm
Ta=25
O
C
LIMITS
MIN
TYP
MAX
I
R1
V
R
= 50V
10
A
I
R2
V
R
= 45V
0.5
A
I
F
Forward Current
V
F
= 1.0V
100
mA
Ct
Diode Capacitance
V
R
= 0V, f = 100MHz
1.3
1.8
pF
r
fs
Forward Series Resistance
I
F
= 50mA, f = 470MHz
0.65
0.8
R
P
Parallel Resistance
V
R
= 0V, f = 100MHz
1.0
6.0
k
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
Reverse Current
Absolute Maximum Ratings
Electrical Characteristics
15S_05XB15A308 02.9.12 4:42 PM 1057
XB15A308
1058
15
1.E-04
1.E-03
1.E-02
1.E-01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
F(V)
F(A)
0
25
50
75
100
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E+00
1.E+01
1.E+02
1.E+03
R(V)
R+0.65(V)
R+0.65(V)
R(A)
25
50
75
100
1.E-01
1.E+00
1.E+01
1.E-03
1.E-02
1.E-01
F(A)
()
1.E-02
1.E-01
1.E+00
1.E+01
1.E-01
1.E+00
1.E+01
1.E+02
(pF)
1.E+02
1.E+03
1.E+04
1.E+05
1.E-01
1.E+00
1.E+01
1.E+02
P()
f = 470MHz, Ta =25
f =100MHz, Ta =25
f =100MHz, Ta =25
PARALLEL RESISTANCE
vs. REVERSE VOLTAGE
FORWARD SERIES RESISTANCE
vs. FORWARD CURRENT
DIODE CAPACITANCE
vs. REVERSE VOLTAGE
FORWARD CURRENT
vs. FORWARD VOLTAGE
REVERSE CURRENT
vs. REVERSE VOLTAGE
15S_05XB15A308 02.9.12 4:42 PM 1058