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Электронный компонент: XP161A1265PR

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XP161A1265PR
Power MOS FET
494
u
x
N-Channel Power MOS FET
x
DMOS Structure
x
Low On-State Resistance: 0.055
MAX
x
Gate Protect Diode Built-in
x
Ultra High-Speed Switching
x
SOT-89 Package
s
Applications
q
Notebook PCs
q
Cellular and portable phones
q
On-board power supplies
q
Li-ion battery systems
s
General Description
The XP161A1265PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
s
Features
Low on-state resistance: Rds(on)=0.055
(Vgs=4.5V)
Rds(on)=0.095
(Vgs=2.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage: 2.5V
High density mounting: SOT-89
s
Absolute Maximum Ratings
s
Equivalent Circuit
s
Pin Configuration
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
12
4
16
4
2
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
s
Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
Ta=25
:
When implemented on a glass epoxy PCB
Note:
1
3
2
N-Channel MOS FET
(1 device built-in)
1
G
3
S
2
D
SOT-89
(TOP VIEW)
495
u
DC characteristics
Ta=25
:
s
Electrical Characteristics
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
0.7
1.4
V
0.095
0.07
Id=2A, Vgs=2.5V
Gate-Source Leakage Current
Igss
A
10
Forward Transfer Admittance
(note)
8
S
Body Drain Diode
Forward Voltage
0.851.1
V
Drain Cut-off Current
Idss
10
A
Vf
Vds=20V, Vgs=0V
Id=1mA, Vds=10V
Id=2A, Vds=10V
If=4A, Vgs=0V
Vgs=
12V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=2A, Vgs=4.5V
0.042
0.055
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
80
190
320
pF
Vds=10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
40
Turn-off Delay Time
td (off)
ns
55
15
10
ns
Vgs=5V, Id=2A
Vdd=10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-surroundings)
62.5
:
/W
Implement on a glass epoxy
resin PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal characteristics
XP161A1265PR
Power MOS FET
496
u
0
2
4
6
8
10
12
14
16
0
0.5
1
1.5
2
2.5
3
Ta=25, Pulse Test
Vgs=1.5V
2V
2.5V
3V
4V
5V
4.5V
3.5V
0
2
4
6
8
10
12
14
16
0
1
2
3
4
Vds=10V, Pulse Test
125
25
0
0.03
0.06
0.09
0.12
0.15
0
2
4
6
8
10
Id=4A
2A
0.01
0.1
1
0
5
10
15
20
Vgs=4.5V
10V
Drain / Source Voltage:Vds (V)
Electrical Characteristics
Ta=25, Pulse Test
Drain/Source On-State Resistance vs. Drain Current
Drain/Source On-State Resistance vs. Gate/Source Voltage
Drain Current vs. Gate/Source Voltage
Drain Current vs. Drain/Source Voltage
Drain Current:Id (A)
Drain Current:Id (A)
Drain/Source On-State Resistance:Rds(on) ()
Drain/Source On-State Resistance:Rds(on) ()
Gate / Source Voltage:Vgs (V)
Ta=25, Pulse Test
Gate / Source Voltage:Vgs (V)
Drain Current:Id (A)
Ta=-55
0
0.03
0.06
0.09
0.12
0.15
-50
0
50
100
150
Pulse Test
Ambient Temperature:Topr ()
Vgs=2.5V
4.5V
Id=4A
2A
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
-50
0
50
100
150
Vds=10V, Id=1mA
2A, 4A
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds(on) ()
Gate/Source Cut Off Voltage Variance
:Vgs(off) Variance (V)
Ambient Temperature:Topr ()
497
u
1
10
100
1000
0
2
4
6
8
10
tr
td(on)
td(off)
tf
10
100
1000
0
5
10
15
20
Vgs=0V, f=1MHz, Ta=25
Capacitance:C (pF)
Coss
Ciss
Crss
Drain Current:Id (A)
Drain/Source Voltage:Vds (V)
Electrical Characteristics
Vgs=5V, Vdd10V, PW=10s, duty1%, Ta=25
Switching Time vs. Drain Current
Capacitance vs. Drain/Source Voltage
Switching Time:t (ns)
0
2
4
6
8
10
0
3
6
9
12
15
Vds=10V, Id=4A, Ta=25
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
Standardized Transition Thermal Resistance vs. Pulse Width
Pulse Width:PW (s)
Standardized Transition Thermal Resistance:s(t)
Single Pulse
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Rth(ch-a)=62.5/W, (Implemented on a ceramic PCB)
Gate/Source Voltage:Vgs (V)
Reverse Drain Current:Idr (A)
Vgs=0V, -4.5V
2.5V
4.5V
Ta=25, Pulse Test
Reverse Drain Current vs. Source/Drain Voltage
Gate/Source Voltage vs. Gate Charge