MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM4450-8SL
TECHNICAL DATA
PRELIMINARY
FEATURES
n
HIGH POWERT
n
BROAD BAND INTERNALLY MATCHED
P1dB=39.5dBm at 4.4GHz to 5.0GHz
n
HERMETICALLY SEALED PACKAGE
n
HIGH GAIN
G1dB=9.5dB at 4.4GHz to 5.0GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P
1dB
dBm
38.5
39.5
Power Gain at 1dB
Compression Point
G
1dB
dB
8.5
9.5
Drain Current
I
DS1
A
2.2
2.6
Gain Flatness
G
dB
0.6
Power Added Efficiency
add
VDS= 10V
f= 4.4 to 5.0GHz
%
36
3
rd
Order Intermodulation
Distortion
IM3
dBc
-42
-45
Drain Current
IDS2
NOTE
A
2.2
2.6
Channel Temperature Rise
Tch
V
DS
X I
DS
X R
th(c-c)
C
80
NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level)
ELECTRICAL CHARACTERISTICS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN. TYP. MAX.
Transconductance
Gm
V
DS
=
3V
I
DS
= 3.0A
mS
1800
Pinch-off Voltage
V
GSoff
V
DS
=
3V
I
DS
= 30mA
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
V
DS
=
3V
V
GS
= 0V
A
5.2
7.0
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -100
A
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
C/W
2.5
3.8
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
2
TIM4450-8SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
V
DS
V
15
Gate-Source Voltage
V
GS
V
-5
Drain Current
I
DS
A
7.0
Total Power Dissipation (Tc= 25
C)
P
T
W
37.5
Channel Temperature
T
ch
C
175
Storage Temperature
T
stg
C
-65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
Gate
,
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
C.
3.2
0.3
0.1
+0.1 -0.05
0.2 MAX.
1.6
0.3
2.6
0.3
5.0 MAX.
4.0
MIN.
4.0
MIN.
12.9
0.2
4-C1.2
0.6
0.15
17
0.3
11.0 MAX.
,
,
21
0.2
12
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