TOSHIBA
TOSHIBA CORPORATION
1/2
Discrete Semiconductors
1SV257
Variable Capacitance Diode
Silicon Epitaxial Planar Type
VCO For UHF Ratio
Features
Ultra Low Series Resistance : r
s
= 0.2
(Typ.)
Useful for Small Size Set
Absolute Maximum Ratings (Ta = 25
C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
125
C
Storage Temperature Range
T
stg
-55 ~ 125
C
Electrical Characteristics (Ta = 25
C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
= 1
A
15
V
Reverse Current
I
R
V
R
= 15V
3
nA
Capacitance
C2V
V
R
= 2V, f = 1MHz
14
15
16
pF
Capacitance
C10V
V
R
= 10V, f = 1MHz
5.5
6
6.5
pF
Capacitance Ratio
C2V/C10V
2.0
2.5
Series Resistance
r
s
V
R
= 5V, f = 470MHz
0.2
0.4
Marking
Unit in mm
2/2
TOSHIBA CORPORATION
1SV257
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
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