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Электронный компонент: 2SC5717

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2SC5717
2001-11-27
1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5717
Horizontal Deflection Output for Super High Resolution
Display, Color TV, Digital TV.
High Speed Switching Applications.


High voltage: V
CBO
= 1500 V
Low saturation voltage: V
CE (sat)
= 3 V (max)
High speed: t
f
(2) = 0.1 s (typ.)
Maximum Ratings
(Tc
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
1500 V
Collector-emitter voltage
V
CEO
700 V
Emitter-base voltage
V
EBO
5 V
DC I
C
21
Collector current
Pulse I
CP
42
A
Base current
I
B
10.5
A
Collector power dissipation
P
C
75
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150 C
Electrical Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 1500 V, I
E
= 0
1 mA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
10 mA
Collector-emitter breakdown voltage
V
(BR) CEO
I
E
= 10 mA, I
B
= 0
700
V
h
FE
(1)
V
CE
= 5 V, I
C
= 2 A
20
50
h
FE
(2)
V
CE
= 5 V, I
C
= 10 A
8
17
DC current gain
h
FE
(3)
V
CE
= 5 V, I
C
= 17 A
4.8
8.3
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 17 A, I
B
= 4.25 A
3 V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 17 A, I
B
= 4.25 A
1.0 1.5 V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.1 A
2
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
240
pF
Storage time
t
stg
(1)
2.5 3
Fall time
t
f
(1)
I
CP
= 10 A, I
B1 (end)
= 1.4 A,
f
H
= 64 kHz
0.15 0.3
Storage time
t
stg
(2)
1.6 1.8
Switching time
Fall time
t
f
(2)
I
CP
= 8 A, I
B1
(end)
= 1.1 A,
f
H
= 100 kHz
0.1 0.15
ms
Unit: mm
JEDEC
JEITA
TOSHIBA 2-16E3A
Weight: 5.5 g (typ.)
2SC5717
2001-11-27
2



























































Collector-emitter voltage VCE (V)
I
C
V
CE
Co
lle
ct
o
r

cu
r
r
e
n
t I
C
(A
)
Collector current I
C
(A)
h
FE
I
C
D
C

c
u
rr
en
t

g
a
i
n h
FE
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r

cu
r
r
e
n
t I
C
(A
)
20
0
0 0.2
0.4
0.6 0.8 1 1.2
4
8
12
16
25
Tc
= 100C
Common emitter
VCE = 5 V
-25
20
0
0
Common emitter
Tc
= 25C
0.4
IB = 0.2 A
0.6
0.8
1.0
1.2
1.4
1.6 1.8
2
2.5
3
3.5
4
2 4 6 8 10
4
8
12
16
300
0.5
0.01
25
Tc
= 100C
Common emitter
VCE = 5 V
-25
0.03 0.1 0.3 1 3 10 30
1
3
10
30
100
2SC5717
2001-11-27
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Base current I
B
(A)
V
CE
I
B
C
o
l
l
e
ct
or
emi
tte
r
vol
t
a
ge V
CE
(V
)
Collector current IC (A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
emi
tte
r sa
tu
rati
on v
o
l
t
a
ge
V
CE (sat)
(V
)
Base current I
B
(A)
V
CE
I
B
C
o
l
l
e
ct
or
emi
tte
r
vol
t
a
ge V
CE
(V
)
Collector current IC (A)
C
o
l
l
e
ct
or
emi
tte
r sa
tu
rati
on v
o
l
t
a
ge
V
CE (sat)
(V
)
Base current I
B
(A)
V
CE
I
B
C
o
l
l
e
ct
or
emi
tte
r
vol
t
a
ge V
CE
(V
)
Collector current IC (A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
emi
tte
r sa
tu
rati
on v
o
l
t
a
ge
V
CE (sat)
(V
)
V
CE (sat)
I
C
0
0
Common
emitter
Tc
= 100C
0.8 1.6 2.4 3.2 4
2
4
6
8
10
7
IC = 17 A
8 9 10 11 12 13
14
15
16
0.05
0.2
Common emitter
Tc
= -25C
1 10
3 100
30
5 50
0.1
0.3
0.5
1
3
5
10
IC/IB = 4
10
8
6
0
0 0.8 1.6 2.4 3.2 4
2
4
6
8
10
7
IC = 17 A
8 9 10 11 12 13 14 15
16
Common
emitter
Tc
= 25C
0
0
7
IC = 17 A
0.8 1.6 2.4 3.2 4
2
4
6
8
10
8 9 10 11 12
13 14 15
16
Common
emitter
Tc
= -25C
10
0.05
1 10
3 100
30
5 50
0.1
0.3
0.5
1
3
5
IC/IB = 4
10
8
6
Common emitter
Tc
= 100C
0.2
10
0.05
1 10
3 100
30
5 50
0.1
0.3
0.5
1
3
5
IC/IB = 4
10
8
6
Common emitter
Tc
= 25C
0.2
2SC5717
2001-11-27
4


























































Collector-emitter voltage V
CE
(V)
Safe Operating Area
Co
lle
ct
o
r

cu
r
r
e
n
t I
C
(A
)
Case temperature Tc (C)
P
C
Tc
C
o
l
l
e
ct
or pow
er di
ssi
p
a
ti
on

P
C
(
W
)
r
th (j-c)
t
w
Pulse width t
w
(s)
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
(j
u
n
cti
o
n-
case
)
r
th (j-c)
(C
/
W
)
Infinite heat sink
100
0
0 25 50 75 100
125
150
20
40
60
80
Tc
= 25C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
10
0.001
10
m 100
m
1 m
10 m
1
10
100
1000
100 m
0.01
0.1
1
*: Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly with
increase in temperature.
100
0.01
1 10
100
1000
0.1
1
10
1 ms*
DC operation
Tc
= 25C
IC max
(continuous)
IC max (pulsed)
VCEO
max
10 ms*
100 ms*
100
ms*
10
ms*
2SC5717
2001-11-27
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE