2SC5886
2002-08-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886
High-Speed Swtching Applications
DC-DC Converter Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.5 A)
Low collector-emitter saturation: V
CE (sat)
= 0.22 V (max)
High-speed switching: t
f
= 55 ns (typ.)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
100 V
V
CEX
80
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
7 V
DC I
C
5
Collector current
Pulse I
CP
10
A
Base current
I
B
0.5
A
Ta
= 25C
1
Collector power
dissipation
Tc
= 25C
Pc
20
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
100
nA
Collector-emitter brakedown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
50
V
h
FE
(1)
V
CE
= 2 V, I
C
= 0.5 A
400
1000
DC current gain
h
FE
(2)
V
CE
= 2 V, I
C
= 1.6 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 1.6 A, I
B
= 32 mA
0.22
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 1.6 A, I
B
= 32 mA
1.10
V
Rise time
t
r
63
Storage time
t
stg
560
Switching time
Fall time
t
f
See Figure 1 circuit diagram
V
CC
~
- 24 V, R
L
= 15 W
I
B1
= 32 mA, I
B2
= -53 mA
55
ns
Unit: mm
JEDEC
JEITA SC-64
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SC5886
2002-08-21
2
Marking
Explanation of Lot No.
C5886
Product No.
Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
Figure 1 Switching Time Test Circuit & Timing Chart
I
B2
I
B1
20
ms
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
< 1%
2SC5886
2002-08-21
4
Pulse width t
w
(s)
r
th (j-c)
t
w
Collector-emitter voltage V
CEO
(V)
Safe Operation Area
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(
A
)
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
(
j
un
ctio
n-
case
)
r
th (j-c)
(C
/
W
)
0.001
0.5
0.01 0.1
1
3
10
50
1
5
30
10
0.003 0.03
0.3
3
Tc
= 25C Infinite heat sink
Curves should be applied in
thermal limited area.
(single nonrepetitive pulse)
0.1
0.01
1 10 100
0.1
1
10
100
0.03
0.05
0.3
0.5
3
5
30
50
*: Single pulse Tc
= 25C
Curves must be derated
linealy with increase in
temperature
IC max (pulsed) *
10
ms*
100
ms*
1 ms*
IC max (continuous)
DC OPERATION
(Tc
= 25C)
10 ms*
100 ms*
V
CEO
max
2SC5886
2002-08-21
5
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000707EAA
RESTRICTIONS ON PRODUCT USE
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