2SD2655
Silicon NPN Epitaxial Planer
Low Frequency Power Amplifier
ADE-208-1388A (Z)
Rev.1
Jun. 2001
Features
Small size package: MPAK (SC59A)
Large Maximum current: I
C
= 1 A
Low collector to emitter saturation voltage: V
CE(sat)
= 0.3 V max.(at I
C
/I
B
= 0.5 A/0.05 A)
High power dissipation: P
C
= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
Complementary pair with 2SB1691
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
Note:
Marking is "WM-".
2SD2655
Rev.1, Jun. 2001, page 2 of 6
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
1
A
Collector peak current
ic(peak)
2
A
Collector power dissipation
P
C
800*
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Note:
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to base breakdown
voltage
V
(BR)CBO
60
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
100
nA
V
CB
= 50 V, I
E
= 0
Emitter cutoff current
I
EBO
100
nA
V
EB
= 5 V, I
C
= 0
DC current transfer ratio
h
FE
200
500
V
CE
= 2 V, I
C
= 0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
0.16
0.3
V
I
C
= 0.5 A, I
B
= 0.05 A,
Pulse test
Base to emitter saturation
voltage
V
BE(sat)
0.91
1.2
V
I
C
= 0.5 A, I
B
= 0.05 A,
Pulse test
Gain bandwidth product
f
T
280
MHz
V
CE
= 2 V, I
C
= 0.1 A
Collector output capacitance
Cob
4.2
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
2SD2655
Rev.1, Jun. 2001, page 3 of 6
0
50
100
150
200
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
0.6
10
100
1
0
0.8
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical transfer Characteristics
0.2
0.4
1.0
0
1.2
0.8
2.0
Collector Current Ic (mA)
0
2
4
6
Collector Current I
C
(mA)
Typical Output Characteristics (1)
Ambient Temperature Ta (
C)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
0.4
1.6
8
1200
1000
800
400
200
10
Pulse
I
B
= 350
A
300 A
250 A
200 A
150 A
100
A
50
A
Typical Output Characteristics (2)
Pulse
I
B
= 1mA
2mA
3mA
4mA
5mA
6mA
1000
V = 2V
Pulse
CE
200
100
500
400
300
200
100
When using alumina ceramic board
S = 25 mm x 60 mm, t = 0.7 mm
2SD2655
Rev.1, Jun. 2001, page 4 of 6
1
10
1000
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
100
200
300
400
0
100
100
1000
Collector Current I
C
(mA)
DC Current Transfer Ratio vs.
Collector Current
1
100
1000
1
10
0.1
1
10
100
1
10
100
1000
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
100
1000
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Saturation Voltage vs.
Collector Current
0.001
0.01
0.1
1
1
10
DC Current Transfer Ratio h
FE
10
Base to Emitter Saturation Voltage V
BE(sat)
(V)
V
BE(sat)
V
CE(sat)
IC/IB = 10
Pulse
500
V
CE
= 2V
Pulse
V
CE
= 2V
Pulse
f = 1MHz
I
E
= 0
2SD2655
Rev.1, Jun. 2001, page 5 of 6
Package Dimensions
0.16
0 0.1
+ 0.10
0.06
0.4
+ 0.10
0.05
0.95
0.95
1.9 0.2
2.95 0.2
2.8
+ 0.2 0.6
0.65
1.5 0.15
0.65
1.1
+ 0.2 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK
--
Conforms
0.011 g
As of January, 2001
Unit: mm
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