2SJ610
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)
2SJ610
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 1.85 (typ.)
High forward transfer admittance: |Y
fs
| = 18 S (typ.)
Low leakage current: I
DSS
= -100 A (V
DS
= -250 V)
Enhancement-mode: V
th
= -1.5~-3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Tc
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-250 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
-250 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
-2.0
Drain current
Pulse (t
= 1 ms)
(Note
1)
I
DP
-4.0
A
Drain power dissipation
P
D
20 W
Single pulse avalanche energy
(Note
2)
E
AS
180 mJ
Avalanche current
I
AR
-2.0 A
Repetitive avalanche energy (Note 3)
E
AR
2.0
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
= -50 V, T
ch
= 25C (initial), L = 75 mH, I
AR
= -2.0 A,
R
G
= 25 W
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SJ610
2002-09-11
2
Electrical Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-off current
I
DSS
V
DS
= -250 V, V
GS
= 0 V
-100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-250
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-1.5
-3.5
V
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -1.0 A
1.85 2.55
W
Forward transfer admittance
Y
fs
V
DS
= -10 V, I
D
= -1.0 A
0.5
1.8
S
Input capacitance
C
iss
381
Reverse transfer capacitance
C
rss
52
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
157
pF
Rise time
t
r
5
Turn-on time
t
on
20
Fall time
t
f
6
Switching time
Turn-off time
t
off
36
ns
Total gate charge
Q
g
24
Gate-source charge
Q
gs
11
Gate-drain charge
Q
gd
V
DD
~
- -200 V, V
GS
= -10 V,
I
D
= -2.0 A
13
nC
Source-Drain Ratings and Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
-2.0
A
Pulse drain reverse current
(Note 1)
I
DRP
-4.0
A
Forward voltage (diode)
V
DSF
I
DR
= -2.0 A, V
GS
= 0 V
2.0
V
Reverse recovery time
t
rr
120 ns
Reverse recovery charge
Q
rr
I
DR
= -2.0 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
540 nC
Marking
Type
J610
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 100 W
V
DD
~
- 100 V
I
D
= 1.0 A V
OUT
50
9
2SJ610
2002-09-11
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
R
DS (ON)
- I
D
100
Tc
= -55C
0
0
-2
-4
-2
-4
-6
Common source
V
DS
= -10 V
Pulse test
-1
-3
-5
25
-1
-3
0
-2
-4
0
-1
-2
-0.5
-1.5
-1
-3
Common source
Tc
= 25C, Pulse test
VGS = -4 V
-5
-4.5
-5.5
-6
-8
-10
-15
-4.5
-8
0
0
-2
-4
-10
-20
VGS = -4 V
Common source
Tc
= 25C, Pulse test
-5
-5.5
-6
-10
-5
-15
-1
-3
-15
0
0
-4
-6
-10
-6
-10
-8
-2
-2
-8
-2
-4
ID = -1 A
Common source
Tc
= 25C
Pulse test
10
0.1
3
-0.1
-0.5
-3
-10
Common source
V
DS
= -10 V
Pulse test
1
5
0.3
0.5
-1
-0.3
-5
Tc
= -55C
100
25
0.1
-0.01
1
10
-0.1
-1
-10
0.5
5
-0.03
-0.3
-3
0.3
3
Common source
Tc
= 25C
V
GS
= 10 V
Pulse test
2SJ610
2002-09-11
4
0
0 40
120
160
200
10
30
40
20
80
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
ID = -1 A
-2 A
0
-80
-40 0 40
80 120 160
1
2
3
4
5
Common source
V
GS
= -10 V
Pulse test
Ciss
Coss
Crss
1000
Common source
V
GS
= 0 V
f
= 1 MHz
Tc
= 25C
-0.1
100
10
1
-1
-10
-100
-0.3
-3
-30
0
-80
-40
0
40
80 120 160
-2
-3
-4
-5
-1
Common source
V
DS
= -10 V
I
D
= -1 mA
Pulse test
-50
0
0
35
-300
VDD = -200 V
Common source
I
D
= -2 A
Tc
= 25C
Pulse test
-200
-100
25
15
5
-100
VGS
VDS
-30
-25
-20
-15
-10
-5
-0
-1
0.1
0
0.2
0.4
1.2
-10
-100
Common source
Tc
= 25C
Pulse test
0.6
0.8 1.0
1.4
VGS = -10 V
-5 V
-3 V
0, 1
2SJ610
2002-09-11
5
0
25
40
80
120
200
160
50
75
100 125 150
Safe operating area
D
r
ai
n
cu
rre
nt
I D
(A
)
Channel temperature (initial) T
ch
(C)
E
AS
T
ch
A
v
al
anc
he
en
er
gy E
AS
(mJ
)
Pulse width t
w
(S)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
Drain-source voltage V
DS
(V)
ID max (pulsed) *
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
-0.0
1
-0.1
-0.0
-0.0
-1
-0.3
-0.5
-10
-3
-5
-100
-30
-50
10
3 5
100
30 50 1000
300 500
DC
100
ms *
1 ms *
VDSS max
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= -50 V, L = 75 mH
r
th
t
w
10
m 100
m
3
1 m
10 m
1
10
100
Single pulse
0.2
T
PDM
t
Duty
= t/T
Rth (ch-c) = 6.25C/W
Duty
= 0.5
1
0.5
0.3
0.1
0.05
0.03
0.01
0.005
0.003
0.001
100 m
0.1
0.05
0.02
0.01
2SJ610
2002-09-11
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
This datasheet has been download from:
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