2SJ619
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
-
F-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.15 W (typ.)
High forward transfer admittance: Y
fs
= 7.7 S (typ.)
Low leakage current: I
DSS
= -100 A (max) (V
DS
= -100 V)
Enhancement-model: V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-100 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
-100 V
Gate-source voltage
V
GSS
20 V
DC (Note
1) I
D
-16
Drain current
Pulse (Note
1)
I
DP
-64
A
Drain power dissipation (Tc
= 25C)
P
D
75 W
Single pulse avalanche energy
(Note
2)
E
AS
292 mJ
Avalanche current
I
AR
-16 A
Repetitive avalanche energy (Note 3)
E
AR
7.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.67
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
= -25 V, T
ch
= 25C (initial), L = 1.84 mH, R
G
= 25 W,
I
AR
= -16 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
2SJ619
2002-08-09
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= -100 V, V
GS
= 0 V
-
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-
100
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-
0.8
-
2.0
V
V
GS
= -4 V, I
D
= -6 A
0.25 0.32
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -6 A
0.15 0.21
W
Forward transfer admittance
Y
fs
V
DS
= -10 V, I
D
= -6 A
4.5
7.7
S
Input capacitance
C
iss
1100
Reverse transfer capacitance
C
rss
210
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
440
pF
Rise time
t
r
18
Turn-ON time
t
on
30
Fall time
t
f
18
Switching time
Turn-OFF time
t
off
65
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
48
Gate-source charge
Q
gs
29
Gate-drain ("miller") charge
Q
gd
V
DD
~
- -80 V, V
GS
= -10 V, I
D
= -16 A
19
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
-16
A
Pulse drain reverse current
(Note 1)
I
DRP
-64
A
Forward voltage (diode)
V
DSF
I
DR
= -16 A, V
GS
= 0 V
1.7
V
Reverse recovery time
t
rr
160
ms
Reverse recovery charge
Q
rr
I
DR
= -16 A, V
GS
= 0 V,
dI
DR
/dt
= 50 A/ms
0.5
mC
Marking
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
J619
Duty <= 1%, t
w
= 10 ms
-10 V
0
V
V
GS
R
L
= 6.25 W
V
DD
~
- -50 V
I
D
= -8 A
V
OUT
50
9
2SJ619
2002-08-09
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
- I
D
Drain current I
D
(A)
R
DS (ON)
- I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
9
)
0
-5
-1
-3
-2
-4
Common source
Tc
= 25C
pulse test
VGS = -2 V
-3
-10
-8
-2.5
-6
-4
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-20
-4
-12
-8
-16
VGS = -2 V
Common source
Tc
= 25C
pulse test
0
-2
-4
-6
-8
-10
-8
-3
-10
-2.5
-6
-3.5
-4
0
-0.8
-2.4
-1.6
-3.2
0
-8
-12
-16
-20
-4
Common source
Tc
= 25C
pulse test
ID = -8 A
-2
-4
-0.1
-1
-0.3
-3
-10
0.1
1.0
0.5
3.0
0.03
VGS = -4 V
0.3
Common source
Tc
= 25C
Pulse test
-20
0.05
1
-0.3
-30
30
10
3
5
-3
-10
-1
50
Tc
= -55C
25
100
Common source
VDS = -10 V
Pulse test
-10
0
-2
-3
-4
-5
-6
-1
0
-10
-2
-6
-4
-8
Common source
VDS = -10 V
pulse test
Tc
= -55C
25
100
2SJ619
2002-08-09
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
Case temperature Tc (C)
R
DS (ON)
- Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
- V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
- Tc
Case temperature Tc (C)
P
D
- Tc
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
-0.3
-30
-0.5
-3
-10
-5
-1.0
Common source
Tc
= 25C
pulse test
-3
VGS = -10 V
-5
-1
-2
0, 1
0 0.2 0.4 0.6 0.8 1.0
0
0.5
0.1
0.3
0.2
0.4
Common source
pulse test
ID = -8 V
-4
-8
-2
-2, 4
VGS = -4 V
VGS = -10 V
-80
-40 0 40 80
160
120
100
300
1000
-1
-0.1
-100
-10
Ciss
Coss
Crss
Common source
VGS
= 0 V
f
= 1 MHz
Tc
= 25C
10
30
500
3000
-0.3
-3
-30
5000
50
100
20
40
80
0
0
80
120
200
40
160
60
-100
-20
-60
-40
-80
0
0
Common source
ID = -16 A
Tc = 25C
pulse test
-40
VDD = -80 V
VGS
VDS
-20
-4
-12
-8
-16
0
-20
20
40
60
80
100
0
40
80
120
160
-1
-3
-2
-4
0
-80
-40
Common source
VDS = -10 V
ID = -1 mA
pulse test
2SJ619
2002-08-09
5
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) T
ch
(C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (
t
)
/R
th
(c
h-
a)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
D
r
ai
n
cu
rre
nt
I
D
(A
)
0
25
100
200
300
500
400
50
75
100 125 150
10
m 100
m
1 m
10 m
100 m
1
10
0.01
0.03
0.1
1
10
Single pulse
0.01
0.02
0.05
0.1
0.2
Duty
= 0.5
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.67C/W
0.3
3
-0.1
-0.1
-1
-10
-100
-1000
-10
-100
-1000
*: Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
ms *
DC operation
Tc
= 25C
1 ms *
VDSS max
-1
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= -25 V, L = 1.84 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
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