2SJ620
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
--MOSV)
2SJ620
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 63 m (typ.)
High forward transfer admittance: |Y
fs
| = 15 S (typ.)
Low leakage current: I
DSS
= -100 A (max) (V
DS
= -100 V)
Enhancement-model: V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-100 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
-100 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
-18
Drain current
Pulse (Note 1)
I
DP
-72
A
Drain power dissipation (Tc
= 25C)
P
D
125 W
Single pulse avalanche energy
(Note
2)
E
AS
937 mJ
Avalanche current
I
AR
-18 A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.0
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
= -50 V, T
ch
= 25C (initial), L = 3.56 mH, R
G
= 25 W,
I
AR
= -18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
2SJ620
2002-09-11
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= -100 V, V
GS
= 0 V
-
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-
100
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-
0.8
-
2.0
V
V
GS
= -4 V, I
D
= -9 A
85 120
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -9 A
63 90
m
W
Forward transfer admittance
Y
fs
V
DS
= -10 V, I
D
= -6 A
7
15
S
Input capacitance
C
iss
2900
Reverse transfer capacitance
C
rss
480
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
1000
pF
Rise time
t
r
25
Turn-ON time
t
on
45
Fall time
t
f
25
Switching time
Turn-OFF time
t
off
170
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
140
Gate-source charge
Q
gs
90
Gate-drain ("miller") charge
Q
gd
V
DD
~
- -80 V, V
GS
= -10 V, I
D
= -18 A
50
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
-18
A
Pulse drain reverse current
(Note 1)
I
DRP
-72
A
Forward voltage (diode)
V
DSF
I
DR
= -18 A, V
GS
= 0 V
1.7
V
Reverse recovery time
t
rr
220
ms
Reverse recovery charge
Q
rr
I
DR
= -18 A, V
GS
= 0 V,
dI
DR
/dt
= 50 A/ms
0.97
mC
Marking
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
J620
Duty <= 1%, t
w
= 10 ms
-10 V
0
V
V
GS
R
L
=
5.
55
W
V
DD
~
- -50 V
I
D
= -9 A
V
OUT
4.
7
W
2SJ620
2002-09-11
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
- I
D
Drain current I
D
(A)
R
DS (ON)
- I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
0
-50
-10
-30
-20
-40
VGS = -2.5 V
Common source
Tc
= 25C
pulse test
0
-4
-8
-12
-16
-20
-8
-3
-10
-6
-3.5
-4
-5
-4.5
0
-20
-4
-12
-8
-16
Common source
Tc
= 25C
pulse test
VGS = -2 V
-3
-10
-6
-2.5
-8
-4
0
-0.4
-0.8
-1.2
-1.6
-2.0
-3.5
-4.5
0
-2
-3
-4
-5
-1
0
-20
-4
-12
-8
-16
Common source
VDS = -10 V
pulse test
Tc
= -55C
25
100
0
-0.5
-2.0
-1.0
-3.0
0
-8
-12
-16
-4
-2.5
-1.5
-2
-6
-10
-14
Common source
Tc
= 25C
pulse test
ID = -18 A
-4.5
-9
-1
-10
-3
-30
0.03
0.3
0.01
0.1
-100
VGS = -4 V
Common source
Tc
= 25C
Pulse test
-10
25
2
-1
100
-100
30
10
3
5
-5
-10
-30 -50
-3
Tc
= -55C
100
50
Common source
VDS = -10 V
pulse test
2SJ620
2002-09-11
4
-200
-40
-120
-80
0
0
-40
VDD = -80 V
VGS
VDS
-16
-4
-12
-8
0
-20
40
80
120
160
200
Common source
ID = -18 A
Tc = 25C
pulse test
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
Case temperature Tc (C)
R
DS (ON)
- Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
- V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
- Tc
Case temperature Tc (C)
P
D
- Tc
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
0
0.20
0.10
0.05
0.15
-80
-40 0 40 80
160
120
Common source
pulse test
ID = -18 A
-9
-4.5
VGS = -4 V
VGS = -10 V
-0.3
-100
-0.5
-3
-10
-5
-1.0
0 0.4
1.2 1.6 2.0 2.4
0.8
-30
-50
Common source
Tc
= 25C
pulse test
-1
VGS = 0, 1 V
-5
-10
1000
3000
-1
-0.1
-100
-10
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
100
300
5000
30000
-0.3
-3
-30
50000
500
10000
0
40
80
120
160
-1
-3
-2
-4
0
-80
-40
Common source
VDS = -10 V
ID = -1 mA
pulse test
200
50
100
0
0
150
40
80
120
160
2SJ620
2002-09-11
5
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) Tch (C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (
t
)
/R
th
(c
h-
a)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
D
r
ai
n
cu
rre
nt
I
D
(A
)
0
25
200
400
600
1000
800
50
75
100 125 150
10
m 100
m 1m 10m
100m
1
10
0.01
0.03
0.1
1
10
Single pulse
0.01
0.02
0.05
0.1
0.2
Duty
= 0.5
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0C/W
0.3
3
-0.1
-0.1
-1
-10
-100
-1000
-10
-100
-1000
*: Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
ms *
DC operation
Tc
= 25C
1 ms *
VDSS max
-1
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= -50 V, L = 3.56 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
2SJ620
2002-09-11
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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