2SK3077A
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
VHF/UHF Band Amplifier Applications
Output power: P
o
20.5dBmW
Gain: G
p
10.5dB
Drain Efficiency: D 50%
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
10 V
Gate-source voltage
V
GSS
5 V
Drain current
I
D
0.1
A
Power dissipation
P
D
0.1
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-45~150 C
Marking
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Output power
P
O
20.5
dBmW
Drain efficiency
D
50
%
Power gain
G
P
V
DS
= 4.5 V, Iidle = 20 mA
(V
GS
= adjust)
f = 470 MHz, P
i
= 10dBmW
10.5
dB
Threshold voltage
V
th
V
DS
= 4.8 V, I
D
= 0.5 mA
0.25
1.25
V
Drain cut-off current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
10 A
Gate-source leakage current
I
GSS
V
GS
= 5 V, V
DS
= 0 V
5 A
Load mismatch
(Note 1)
V
DS
= 6.5 V, f = 470 MHz,
P
i
= 10dBmW,
P
o
= 20.5dBmW (V
GS
= adjust)
VSWR LOAD 10:1 all phase
No degradation
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 1: When the RF output power test fixture is used
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2K1D
4
W A
3
1 2
1, 3 Source
2 Gate
4 Drain
2SK3077A
2002-01-09
5
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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Handbook" etc..
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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